2N/PN/SST4391 Series
Vishay Siliconix
N-Channel JFETs
2N4391
PN4391
SST4391
2N4392
PN4392
SST4392
2N4393
PN4393
SST4393
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max ()
ID(off) Typ (pA)
tON Typ (ns)
2N/PN/SST4391
–4 to –10
30
5
4
2N/PN/SST4392
–2 to –5
60
5
4
2N/PN/SST4393
–0.5 to –3
100
5
4
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 4391<30 D Fast Switching—tON: 4 ns
D High Off-Isolation: ID(off) with Low
Leakage
D Low Capacitance: < 3.5 pF
D Low Insertion Loss
D
D
D
D
D
D
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
Commutators
DESCRIPTION
The 2N/PN/SST4391 series features many of the superior
characteristics of JFETs which make it a good choice for
demanding analog switching applications and for specialized
amplifier circuits.
TO-206AA
(TO-18)
The 2N series hermetically-sealed TO-206AA (TO-18) can is
available with processing per MIL-S-19500 (see Military
Information). Both the PN, TO-226AA (TO-92), and SST,
TO-236 (SOT-23), series are available in tape-and-reel for
automated assembly (see Packaging Information). For similar
dual products, see the 2N5564/5565/5566 data sheet.
TO-226AA
(TO-92)
S
D
1
S
2
1
TO-236
(SOT-23)
D
3
S
2
3
D
G
1
G
2
3
G and Case
Top View
Top View
Top View
2N4391
2N4392
2N4393
PN4391
PN4392
PN4393
SST4391 (CA)*
SST4392 (CB)*
SST4393 (CC)*
*Marking Code for TO-236
For applications information see AN104 and AN106
.
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-1
2N/PN/SST4391 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . –40 V
(SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . –35 V
Operating Junction Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . –55 to 200 _C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power Dissipation :
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature :
(2N Prefix)a . . . . . . . . . . (TC = 25_C) 1800 mW
(PN/SST Prefixes)b . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 10 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
(2N Prefix) . . . . . . . . . . . . . . . . . . –65 to 200 _C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4391
Parameter
Symbol
Test Conditions
Typa
V(BR)GSS
IG = –1 A, VDS = 0 V
–55
Min
–40
4392
Max
Min
4393
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source
Cutoff Voltage
Saturation Drain
Currentb
VGS(off)
IDSS
VDS = 20 V
2N/PN: ID = 1 nA
VDS = 15 V
SST: ID = 10 nA
VDS = 20 V, VGS = 0 V
VGS = –20 V
VDS = 0 V
Gate Reverse Current
Gate Operating Current
IGSS
IG
ID(off)
VDS = 20 V
TA = 150_C
VDS = 20 V
TA = 100_C
VDS = 10 V
TA = 125_C
Drain-Source
On-Voltage
VDS(on)
VGS = 0 V
–2
–5
–0.5
–3
50
150
25
75
5
30
50
150
25
100
5
60
SST
50
25
2N/SST
–5
–100
–100
–100
PN
–5
–1000
–1000
–1000
–13
–200
–200
–200
–1
–200
–200
–200
SST: TA = 125_C
–3
5
2N: VGS = –7 V
5
5
PN: VGS = –5 V
0.005
PN: VGS = –7 V
0.005
PN: VGS = –12 V
0.005
1
5
100
2N: VGS = –5 V
13
2N: VGS = –7 V
13
2N: VGS = –12 V
13
PN: VGS = –5 V
1
PN: VGS = –7 V
1
PN: VGS = –12 V
1
SST: VGS = –10 V
3
ID = 3 mA
0.25
ID = 6 mA
0.3
ID = 12 mA
0.35
VGS(F)
IG = 1 mA
VDS = 0 V
nA
100
2N
0.7
PN/SST
0.7
pA
100
2N: VGS = –12 V
Gate-Source
Forward Voltage
pA
–5
2N: VGS = –5 V
VGS = 0 V, ID = 1 mA
mA
5
2N: TA = 150_C
rDS(on)
7-2
–10
PN: TA = 100_C
Drain-Source
On-Resistance
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V
–4
2N
SST VDS = 10 V, VGS = –10 V
Drain Cutoff Current
–40
PN
VDG = 15 V, ID = 10 mA
VDS = 20 V
–40
100
1
1
100
nA
100
pA
200
200
200
200
nA
200
200
0.4
0.4
V
0.4
30
60
100
1
1
1
V
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
2N/PN/SST4391 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4391
Parameter
Symbol
Typa
Test Conditions
Min
4392
Max
Min
4393
Max
Min
Max
Unit
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source
On-Resistance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
gfs
6
mS
25
S
VDS = 20 V, ID = 1 mA, f = 1 kHz
gos
rDS(on)
Ciss
Crss
en
VGS = 0 V, ID = 0 mA , f = 1 kHz
VDS = 20 V, VGS = 0 V
f = 1 MHz
VDS = 0 V
f = 1 MHz
30
60
100
2N
12
14
14
14
PN
12
16
16
16
SST
13
2N: VGS = –5 V
3.3
2N: VGS = –7 V
3.2
2N: VGS = –12 V
2.8
PN: VGS = –5 V
3.5
PN: VGS = –7 V
3.4
PN: VGS = –12 V
3.0
SST: VGS = –5 V
3.6
SST: VGS = –7 V
3.5
SST: VGS = –12 V
3.1
VDS = 10 V, ID = 10 mA
f = 1 kHz
3.5
3.5
3.5
5
pF
5
5
nV⁄
√Hz
3
Switching
td(on)
Turn-On Time
tr
td(off)
Turn-Off Time
tf
VDD = 10 V
VGS(H) = 0 V
See Switching Circuit
2N/PN
2
SST
2
2N/PN
2
SST
2
2N/PN
6
SST
6
2N/PN
13
SST
13
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 s duty cycle v3%.
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
15
15
15
5
5
5
20
35
50
15
20
30
ns
NCB
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7-3
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
80
160
IDSS
rDS
60
120
40
80
20
40
0
rDS(on) – Drain-Source On-Resistance ( Ω )
rDS @ ID = 1 mA, VGS = 0 V
IDSS @ VDS = 20 V, VGS = 0 V
TA = 25_C
80
VGS(off) = –2 V
60
40
–4 V
–8 V
20
0
0
–2
–4
–6
–8
VGS(off) – Gate-Source Cutoff Voltage (V)
0
On-Resistance vs. Drain Current
100
200
IDSS – Saturation Drain Current (mA)
rDS(on) – Drain-Source On-Resistance ( Ω )
100
–10
1
10
ID – Drain Current (mA)
Turn-On Switching
On-Resistance vs. Temperature
5
tr approximately independent of ID
VDD = 5 V, RG = 50 W
VGS(L) = –10 V
ID = 1 mA
rDS changes X 0.7%/_C
160
4
tr
Switching Time (ns)
rDS(on) – Drain-Source On-Resistance ( Ω )
200
120
VGS(off) = –2 V
80
–4 V
–8 V
40
0
–55 –35
3
td(on) @
ID = 12 mA
2
td(on) @
ID = 3 mA
1
0
–15
5
65
25 45
TA – Temperature (_C)
85
105
0
125
Turn-Off Switching
30
–10
f = 1 MHz
VDS = 0 V
24
18
Capacitance (pF)
24
Switching Time (ns)
–2
–4
–6
–8
VGS(off) – Gate-Source Cutoff Voltage (V)
Capacitance vs. Gate-Source Voltage
30
td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = –10 V
VGS(off) = –2 V
tf
12
18
12
td(off)
Ciss
6
6
VGS(off) = –8 V
Crss
0
0
0
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7-4
100
2
4
6
ID – Drain Current (mA)
8
10
0
–4
–8
–12
–16
VGS – Gate-Source Voltage (V)
–20
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*
Noise Voltage vs. Frequency
100
50
500
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz
Hz
en – Noise Voltage nV /
10
ID = 1 mA
ID = 10 mA
1
10
100
1k
f – Frequency (Hz)
10 k
40
400
gfs
30
200
10
100
0
VDG = 10 V
ID = 10 mA
TA = 25_C
ID = 10 mA
1 mA
10 pA
10 mA
0
10
1 mA
100 pA
–10
gig
big
(mS)
IG – Gate Leakage)
1 nA
–4
–6
–8
VGS(off) – Gate-Source Cutoff Voltage (V)
100
IGSS @ 125_C
TA = 125_C
–2
Common-Gate Input Admittance
Gate Leakage Current
10 nA
200
20
0
100 k
gos
gos – Output Conductance (µS)
gfs – Forward Transconductance (mS)
VDS = 10 V
IGSS @ 25_C
1
TA = 25_C
1 pA
IG(on) @ ID
0.1 pA
0.1
0
6
12
18
24
VDG – Drain-Gate Voltage (V)
100
30
Common-Gate Forward Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
bfg
1.0
10
(mS)
gfg
(mS)
1000
Common-Gate Reverse Admittance
10
VDG = 10 V
ID = 10 mA
TA = 25_C
–gfg
200
500
f – Frequency (MHz)
–brg
–grg
+grg
0.1
1
0.01
0.1
100
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
200
500
f – Frequency (MHz)
1000
100
200
500
f – Frequency (MHz)
1000
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7-5
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Drain Current
Common-Gate Output Admittance
100
100
VGS(off) = –2 V
gfs – Forward Transconductance (mS)
VDG = 10 V
ID = 10 mA
TA = 25_C
bog
(mS)
10
gog
1
0.1
TA = –55_C
25_C
10
125_C
1
100
200
500
0.1
1000
1.0
10
ID – Drain Current (mA)
f – Frequency (MHz)
Output Characteristics
Transfer Characteristics
100
100
VGS(off) = –4 V
VGS(off) = –4 V
VDS = 20 V
80
ID – Drain Current (mA)
80
ID – Drain Current (mA)
VDS = 10 V
f = 1 kHz
VGS = 0 V
60
–0.5 V
40
–1.0 V
–1.5 V
20
TA = –55_C
60
25_C
40
20
–2.0 V
125_C
–2.5 V
0
0
0
2
4
6
10
8
0
–1
VDS – Drain-Source Voltage (V)
–2
–3
–4
–5
VGS – Gate-Source Voltage (V)
VDD
RL
SWITCHING TIME TEST CIRCUIT
4391
OUT
4392
4393
VGS(L)
–12 V
–7 V
–5 V
RL*
800 1600 3000 ID(on)
12 mA
6 mA
3 mA
VGS(H)
VGS(L)
1 kΩ
51 Ω
*Non-inductive
INPUT PULSE
SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 M
Input Capacitance 1.5 pF
VIN
Scope
51 Ω
See Typical Characteristics curves for changes.
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7-6
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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1