$GYDQFHG 3RZHU 026)(7
IRF740
FEATURES
BVDSS = 400 V
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
RDS(on) = 0.55Ω
♦ Lower Input Capacitance
♦ Improved Gate Charge
ID = 10 A
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
TO-220
♦ Lower RDS(ON): 0.437Ω (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
ID
Characteristic
Drain-to-Source Voltage
Value
Units
400
V
Continuous Drain Current (TC=25°C)
10
Continuous Drain Current (TC=100°C)
6.3
IDM
Drain Current-Pulsed
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
(2)
A
40
(1)
A
±30
V
457
mJ
A
IAR
Avalanche Current
(1)
10
EAR
Repetitive Avalanche Energy
(1)
13.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(3)
4.0
V/ns
Total Power Dissipation (TC=25°C)
134
W
Linear Derating Factor
1.08
W/°C
PD
TJ , TSTG
TL
Operating Junction and
- 55 to +150
Storage Temperature Range
°C
Maximum Lead Temp. for Soldering
300
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
RθJC
Junction-to-Case
--
0.93
RθCS
Case-to-Sink
0.5
--
RθJA
Junction-to-Ambient
--
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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IRF740
Electrical Characteristics (TC=25°C unless otherwise specified)
Characteristic
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
400
--
--
∆BV/∆TJ
Breakdown Voltage Temp. Coeff.
--
0.50
--
VGS(th)
IGSS
IDSS
RDS(on)
Gate Threshold Voltage
2.0
--
4.0
Gate-Source Leakage , Forward
--
--
100
Gate-Source Leakage , Reverse
--
--
-100
--
--
10
--
--
100
--
--
0.55
--
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
gfs
Forward Transconductance
--
7.78
Ciss
Input Capacitance
--
1180 1530
Coss
Output Capacitance
--
175
205
Crss
Reverse Transfer Capacitance
--
80
95
td(on)
Turn-On Delay Time
--
18
50
Rise Time
--
21
55
Turn-Off Delay Time
--
78
170
Fall Time
--
28
65
Qg
Total Gate Charge
--
58
75
Qgs
Gate-Source Charge
--
8.1
--
Qgd
Gate-Drain ( Miller ) Charge
--
31.3
--
tr
td(off)
tf
V
Test Condition
VGS=0V,ID=250µA
V/°C ID=250µA
V
nA
µA
Ω
Ω
Symbol
pF
See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=400V
VDS=320V,TC=125°C
VGS=10V,ID=5A
(4)
VDS=50V,ID=5A
(4)
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=200V,ID=10A,
ns
RG=9.1Ω
See Fig 13
(4) (5)
VDS=320V,VGS=10V,
nC
ID=10A
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS
Continuous Source Current
--
--
10
ISM
Pulsed-Source Current
(1)
--
--
40
VSD
Diode Forward Voltage
(4)
--
--
1.5
V
TJ=25°C,IS=10A,VGS=0V
trr
Reverse Recovery Time
--
315
--
ns
TJ=25°C,IF=10A
Qrr
Reverse Recovery Charge
--
2.84
--
µC
diF/dt=100A/µs
A
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=8mH, IAS=10A, VDD=50V, RG=27Ω, Starting TJ =25°C
(3) ISD ≤ 10A, di/dt ≤ 170A/µs, VDD ≤ BV DSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
Integral reverse pn-diode
in the MOSFET
(4)
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IRF740
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
ID , Drain Current [A]
ID , Drain Current [A]
Top :
100
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
10-1 -1
10
100
101
150 oC
100
25 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
- 55 oC
10-1
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.9
IDR , Reverse Drain Current [A]
RDS(on) , [ Ω ]
Drain-Source On-Resistance
1.2
VGS = 10 V
0.6
VGS = 20 V
0.3
o
@ Note : TJ = 25 C
0.0
0
10
20
30
101
100
o
25 C
10-1
0.2
40
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
150 oC
0.4
0.6
0.8
1.0
1.2
1.4
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
2000
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
C iss
1000
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
C oss
500
C rss
00
10
1
10
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Capacitance [pF]
1500
VDS = 80 V
10
VDS = 200 V
VDS = 320 V
5
@ Notes : ID = 10.0 A
0
0
10
20
30
40
QG , Total Gate Charge [nC]
50
60
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Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
3.0
RDS(on) , (Normalized)
Drain-Source On-Resistance
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
0.8
-75
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
-50
-25
0
25
50
75
100
125
150
2.5
2.0
1.5
1.0
@ Notes :
1. VGS = 10 V
2. ID = 5.0 A
0.5
0.0
-75
175
-50
-25
o
0
25
50
75
100
125
150
175
TJ , Junction Temperature [oC]
TJ , Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
12
ID , Drain Current [A]
100 µs
1 ms
101
10 µs
10 ms
DC
100
@ Notes :
1. TC = 25 oC
-1
10
10-2 0
10
101
10
8
6
4
2
2. TJ = 150 oC
3. Single Pulse
102
0
25
103
50
75
100
Tc , Case Temperature [oC]
VDS , Drain-Source Voltage [V]
Thermal Response
Fig 11. Thermal Response
100
D=0.5
0.2
-1
10
@ Notes :
1. Zθ J C (t)=0.93 o C/W Max.
2. Duty Factor, D=t1 /t2
3. TJ M -TC =PD M *Zθ J C (t)
0.1
0.05
0.02
PDM
0.01
single pulse
t1
θ
Z JC(t) ,
ID , Drain Current [A]
102
Operation in This Area
is Limited by R DS(on)
t2
10- 2 - 5
10
-4
10
-3
10
-2
10
-1
10
t1 , Square Wave Pulse Duration
100
[sec]
101
125
150
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IRF740
Fig 12. Gate Charge Test Circuit & Waveform
Current Regulator
VGS
Same Type
as DUT
50kΩ
Qg
200nF
12V
10V
300nF
VDS
Qgs
VGS
Qgd
DUT
3mA
R1
R2
Current Sampling (IG)
Resistor
Charge
Current Sampling (ID)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
Vin
( 0.5 rated VDS )
RG
DUT
Vin
10%
10V
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
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IRF740
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
Driver
VGS
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
IS controlled by Duty Factor D
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.