GaN Systems to show new Gallium Nitride high power transistors at

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ECCE 2014
Pittsburgh USA
Booth 419
GaN Systems to show new Gallium Nitride high power transistors at
Energy Conversion Congress and Exposition 2014
Wide range of devices enable smaller, lighter and more efficient power electronics for a more
sustainable energy future
OTTAWA, Ontario – September 2014 – GaN Systems Inc, a leading developer of gallium nitride
power switching semiconductors, is exhibiting its latest products at ECCE, the IEEE Energy
Conversion Congress & Expo being held in Pittsburgh, USA from September 14 – 18. The event is
the world’s leading technical conference and exhibition focussing on next generation green and
sustainable energy technologies and attracts an international audience interested in the latest
innovations from industry and research from academic experts in the field.
On booth 419, GaN Systems is showcasing its range of gallium nitride power transistors based on
its proprietary Island Technology®, which produces highly efficient, smaller transistors at lower
cost than traditional silicon MOSFETs and IGBTs.
GaN Systems’ devices feature intrinsic fast
switching and dense current carrying capability, further enhanced by the company’s GaNPX
packaging, which has no wire bonds, minimizing inductance and thermal resistance and increasing
reliability.
These new devices from GaN Systems bring smaller, lighter and more efficient power electronics
to numerous applications including consumer appliances, data center server racks, heavy-duty
battery-operated power tools, notebook travel adaptors and many others. With current ratings
from 8A to 200A, GaN Systems is the first company to offer a comprehensive product range of
gallium nitride devices to the global market through an exclusive worldwide distribution
agreement with Mouser Electronics.
For further information on ECCE 2014, please visit:
http://2014.ecceconferences.org/
About GaN Systems
GaN Systems is a fabless semiconductor company that is the first place systems designers go to
realize all the benefits of gallium nitride in their power conversion and control applications. To
overcome silicon’s limitations in switching speed, temperature, voltage and current, the company
develops the most complete range of gallium nitride power switching transistors for a wide variety
of markets. GaN Systems’ unique Island Technology® addresses today’s challenges of cost,
performance, and manufacturability resulting in devices that are smaller and more efficient than
other GaN design approaches. The company is headquartered in Ottawa, Canada. For more
information, please visit: www.gansystems.com
More Information
For press enquiries:
Tracy Lamb
Anna Johnston
Corporate Communications
PR Account Manager
GaN Systems
BWW Communications
+1 (613) 686-1996 ext. 149 (office)
Tel.: +44 1491-636393
tlamb@gansystems.com
anna.johnston@bwwcomms.com
www.gansystems.com
www.bwwcomms.com
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