GP2M009A090NG
N-channel MOSFET
Features
 Low gate charge
 Improved dv/dt capability
 Improved ESD performance
 RoHS compliant
 JEDEC Qualification
BVDSS
ID
RDS(on)
900V
9A
<1.4W
Ordering Part Number
Package
Marking
Remark
GP2M009A090NG
TO-3PN
GP2M009A090NG
RoHS
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGS
±30
V
9
A
5.9
A
Continuous Drain Current
TC = 25 ℃
ID
TC = 100 ℃
Pulsed Drain Current (Note 1)
IDM
36
A
Single Pulse Avalanche Energy (Note 2)
EAS
456
mJ
Repetitive Avalanche Current (Note 1)
IAR
9
A
Repetitive Avalanche Energy (Note 1)
EAR
31.2
mJ
312
W
2.5
W/℃
dv/dt
4.5
V/ns
TJ, TSTG
-55~150
℃
TL
300
℃
Symbol
Value
Unit
Maximum Thermal resistance, Junction-to-Case
RqJC
0.4
℃/W
Maximum Thermal resistance, Junction-to-Ambient
RqJA
62.5
℃/W
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
PD
* Limited only by maximum junction temperature
Thermal Characteristics
Parameter
September 2013 : Rev 0.0
www.GPTechGroup.com
1/5
GP2M009A090NG
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA
900
--
--
V
Zero Gate Voltage Drain Current
IDSS
VDS = 900 V, VGS = 0 V
--
--
10
µA
VDS = 720 V, TC = 125 ℃
--
--
100
µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
--
100
µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
VGS(th)
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
VGS = 10 V, ID = 4.5 A
--
1.12
1.4
W
gFS
VDS = 30 V, ID = 4.5 A
--
17
--
S
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V,
--
2740
--
pF
Output Capacitance
Coss
f = 1.0 MHz
--
192
--
pF
Reverse Transfer Capacitance
Crss
--
27
--
pF
OFF
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
(Note 4)
DYNAMIC
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time
(Note 4,5)
Turn-Off Delay Time
(Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge
(Note 4,5)
Gate-Source Charge
Gate-Drain Charge
(Note 4,5)
(Note 4,5)
td(on)
VDD = 450 V, ID = 9 A,
--
52
--
ns
tr
RG = 25 Ω
--
97
--
ns
td(off)
--
212
--
ns
tf
--
159
--
ns
Qg
VDS = 720 V, ID = 9 A,
--
72
--
nC
Qgs
VGS = 10 V
--
11
--
nC
--
31
--
nC
Qgd
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
(Note 4)
Reverse Recovery Charge
(Note 4)
IS
----
--
--
9.0
A
ISM
----
--
--
38
A
VSD
VGS = 0 V, IS = 9 A
--
--
1.5
V
trr
VGS = 0 V, IS = 9 A
--
570
--
ns
Qrr
dIF / dt = 100 A/µs
--
6.6
--
µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=10.6mH, I AS = 9A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃, not subject to production test – verified by design/characterization
3 I SD ≤ 9A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
September 2013 : Rev 0.0
www.GPTechGroup.com
2/5
GP2M009A090NG
Fig. 1 Output Characteristics
Fig. 2 Transfer Characteristics
16
VDS = 30V
12
Bottom
250 μs Pulse Test
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.0V
10
Drain Current, ID [A]
Drain Current, ID [A]
Top VGS=15.0V
8
150
℃
25
℃
-55
℃
1
4
1. TC = 25
℃
2. 250μs Pulse Test
0
0.1
0
5
10
15
20
2
4
Fig. 3 On-Resistance vs.
Drain Current and Gate voltage
10
1.5
2.0
40
VGS = 0V
TJ = 25
℃
250μs Pulse Test
Reverse Drain Current, IDR [A]
Drain-Source On-Resistance, RDS(ON) [Ω]
8
Fig. 4 Body Diode Forward Voltage vs.
Source Current and Temperature
2.0
VGS = 10V
1.5
VGS = 20V
1.0
0
5
10
15
30
150
20
℃
10
0.5
1.0
Source-Drain Voltage, VSD [V]
Drain Current, ID [A]
Fig. 6 Gate Charge Characteristics
Fig. 5 Capacitance Characteristics
12
5000
Ciss = Cgs + Cgd (Cds = shorted)
ID = 9.0A
Crss = Cgd
4000
VGS = 0 V
f = 1 MHz
Ciss
3000
Coss
2000
Crss
1000
Gate-Source Voltage, VGS [V]
Coss = Cds + Cgd
0
-1
10
25
℃
20
0
0.0
0.5
Capacitance [pF]
6
Gate-Source Voltage, VGS [V]
Drain-Source Voltage, VDS [V]
10
VDS = 450V
8
VDS = 180V
VDS = 720V
6
4
2
0
0
10
1
10
0
September 2013 : Rev 0.0
20
40
60
80
Total Gate Charge, QG [nC]
Drain-Source Voltage, VDS [V]
www.GPTechGroup.com
3/5
GP2M009A090NG
Fig. 7 Breakdown Voltage vs. Temperature
Fig. 8 On-Resistance vs. Temperature
3.0
VGS = 10 V
VGS = 0 V
1.15
ID = 4.5 A
ID = 250 μA
Drain-Source On-Resistance
RDS(ON), (Normalized)
Drain-Source Breakdown Voltage
BVDSS (Normalized)
1.20
1.10
1.05
1.00
0.95
0.90
2.5
2.0
1.5
1.0
0.5
0.85
0.80
-80
-40
0
40
80
Junction Temperature,TJ [
120
Gate Threshold Voltage, VTH (Normalized)
8
6
4
2
50
75
100
125
Case Temperature, TC [
40
80
120
160
120
160
]
℃
℃
1.5
1.0
0.5
VDS = VGS
ID = 250  A
0.0
-80
150
-40
0
40
80
Junction Temperature, TJ [
]
]
℃
Fig. 12 Transient Thermal Response Curve
Fig. 11 Maximum Safe Operating Area
0
10
Operation in This Area
is Limited by R DS(on)
10 us
100 us
1
10
1 ms
10 ms
100 ms
DC
0
10
-1
10
TC = 25
℃
TJ = 150
℃
Single Pulse
Transient thermal impedance, ZthJC(t)
2
10
Drain Current, ID [A]
0
Fig. 10 Gate Threshold Voltage vs.
Junction Temperature
10
0
25
-40
Junction Temperature, TJ [
Fig. 9 Maximum Drain Current vs.
Case Temperature
Drain Current, ID [A]
0.0
-80
160
]
℃
Duty=0.5
0.2
-1
10
0.1
PDM
t
0.05
0.02
T
0.01
-2
10
Duty = t/T
ZthJC(t) = 0.4 /W Max.
single pulse
℃
-2
10
0
10
1
10
2
10
3
10
-5
10
Drain-Source Voltage, VDS [V]
September 2013 : Rev 0.0
-4
10
-3
10
-2
10
-1
10
0
1
10
10
Pulse Width, t [sec]
www.GPTechGroup.com
4/5
GP2M009A090NG
TO-3PN MECHANICAL DATA
Disclaimer :
Global Power Technologies Group reserves the right to make changes without notice to products herein to improve reliability,
performance, or design. The information given in this document is believed to be accurate and reliable. However, it shall in no event
be regarded as a guarantee of conditions and characteristics. With respect to any information regarding the application of the device,
Global Power Technologies Group hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of patent rights of any third party.
September 2013 : Rev 0.0
www.GPTechGroup.com
5/5