Ruttonsha International Rectifier Ltd.
RUTTONSHA
SILICON CONTROLLED RECTIFIERS
111RK SERIES
Power Silicon Controlled Rectifiers
170 Amp RMS SCRs
Types : 111RK10 TO 111RK160
111RK ...
FEATURES
v
All diffused series.
v
International Standard Case TO-209 AC (TO-94).
v
Threaded studs UNF 1/2’’ - 20 UNF 2A.
v
High di/dt and dv/dt capabilities.
v
Reliable blocking at elevated temperature.
v
High surge current rating 2700 A.
v
High I 2t capability 36400 A 2Sec.
v
Excellent dynamic characteristics.
v
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling.
THERMAL MECHANICAL SPECIFICATIONS
R thjc
Maximum thermal resistance
junction to case
0.195K/W
R thcs
Contact thermal resistance case-to-sink
0.08K/W
TJ
Junction operating temp. range
-40 0C to +125 0C
T stg
Storage temperature range
-40 0C to +150 0C
Mounting torque
(Non-lubricated threads)
14.0Nm. Min.
15.5Nm. Max.
Approximate weight
130 gms.
UNIT:- M.M.
ELECTRICAL RATINGS
TYPE
111RK
10
20
40
60
80
100
120
140
160
V DRM
Max. repetitive peak off state voltage (V)
100
200
400
600
800
1000
1200
1400
1600
V RRM
Max. repetitive peak reverse voltage (V)
100
200
400
600
800
1000
1200
1400
1600
V RSM
Max. non-repetitive peak reverse voltage (V)
150
300
500
700
900
1100
1300
1500
1700
I RM &
I DM
Max. peak reverse & off state current
@ rated V DRM & V RRM 125 0C -mA
20
20
20
20
20
20
20
20
20
SILICON CONTROLLED RECTIFIERS
111RK SERIES
ELECTRICAL SPECIFICATION
ON-STATE CONDITION
Parameter
I T(AV)
111RK
Max. average on-state current
110
@ case temperature
90
I T(RMS)
Max. RMS on-state current
175
I TSM
Max. peak one cycle
non-repetitive surge current
2700
Units
A
0
I t
Maximum I t for fusing
2
36.4
2
kA 2s
25.8
I
Maximum I 2t for fusing
364
V T(TO)1
Low level value of threshold voltage
0.90
V T(TO)2
High level value of threshold voltage
0.92
r t1
Low level value of on state
slope resistance
1.79
r t2
High level value of on state
slope resistance
1.81
V TM
Max. on state voltage
1.52
IH
Maximum holding current
300
IL
Latching current
600
2
t
180 0C conduction, half sine wave
C
A
2270
Conditions
k A 2s
V
mΩ
t = 10ms
No voltage
reapplied
t = 10ms
100% V RRM
reapplied
t = 10ms
No voltage
reapplied
t = 10ms
100% V RRM
reapplied
Sinusodial half wave,
Initial T J = T J max.
t = 0.1 to 10ms. No voltage reapplied.
(16.7% x π x I F(AV) < I < π x I F(AV) ), T J = T J max.
(π x I F(AV) < I < 20 x π x I F(AV) ), T J = T J max.
(16.7% x π x I F(AV) < Ι < π x I F(AV) ), T J = T J max.
(π x I F(AV) < I < 20 x π x I F(AV) ), T J = T J max.
V
mA
I pk = 350A, T J = 125 0C, t p = 10ms sine pulse
T J = 25 0C, anode supply 12V resistive load
TRIGGERING
Parameter
111RK
P GM
Maximum peak gate power
5
P G(AV)
Maximum average gate power
1
I GM
Max. peak positive gate current
2.0
+V GM
Max. peak positive gate voltage
20
-V GM
Max. peak negative gate voltage
5.0
I GT
DC gate current required to trigger
V GT
DC gate voltage required to trigger
I GD
DC gate current not to trigger
V GD
DC gate voltage not to trigger
Units
W
Conditions
T J = 125 0C, t p ≤ 5ms
T J = 125 0C, f= 50Hz, d% = 50
A
T J = 125 0C, t p ≤ 5ms
V
T J = 125 0C, t p ≤ 5ms
TYP.
MAX.
180
90
40
-150
--
mA
T J = -40 0C
T J = 25 0C
T J = 125 0C
2.9
1.8
1.2
-3.0
--
V
T J = -40 0C
T J = 25 0C
T J = 125 0C
10
0.25
mA
V
T J = 125 0C
Max. required gate trigger / current /
voltage are the lowest value which will
trigger all units 12V anode-to-cathode
applied.
Max. gate current / voltage not to trigger is
the max. value which will not trigger any unit
with rated VDRM anode-to-cathode applied.
SILICON CONTROLLED RECTIFIERS
111RK SERIES
Switching
111RK
Unit
di/dt
Max. non-repetitive rate of rise of turned-on current
Parameter
500
Α/µs
Condition
td
Typical deley time
2.0
µs
Gate current 1A,di g /dt -1A/µs
Vd -0.67% V DRM ,T J -25 0 C
tq
Typical turn-off time
100
µs
I TM -100A,T J-125 0 C,di/dt- 10A/µs,VR -50V
dv/dt -20V/µs,Gate 0v 100Ω, t p − 500µs
Gate drive 20V,20Ω, tr ≤ 1µs
T J-125 0 C. ,anode voltage < 80% V DRM
Blocking
Parameter
dv/dt
I RRM / I DRM
Max. critical rate of rise of off-state voltage
Max. peak reverse and off-stage leakage current
111RK
Unit
500
V/µs
20
mA
Condition
T-125 0 C, Linear to 80% rated V DRM
J
T J -125 0 C, rated V DRM / V RRM applied
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
Last Update : July 2000