RGT00TS65D
Data Sheet
650V 50A Field Stop Trench IGBT
lOutline
VCES
650V
IC(100°C)
50A
VCE(sat) (Typ.)
1.65V
PD
277W
lFeatures
TO-247N
(1)(2)(3)
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
(2)
(1) Gate
(2) Collector
(3) Emitter
2) Low Switching Loss
*1
3) Short Circuit Withstand Time 5μs
(1)
4) Built in Very Fast & Soft Recovery FRD
*1 Built in FRD
(3)
(RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
lApplications
Packaging
General Inverter
Reel Size (mm)
-
Tape Width (mm)
-
UPS
Tube
Type
Power Conditioner
Basic Ordering Unit (pcs)
450
Welder
Taping Code
C11
Marking
RGT00TS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
VCES
650
V
Gate - Emitter Voltage
VGES
30
V
TC = 25°C
IC
85
A
TC = 100°C
IC
50
A
ICP*1
150
A
TC = 25°C
IF
50
A
TC = 100°C
IF
30
A
IFP*1
150
A
TC = 25°C
PD
277
W
TC = 100°C
PD
138
W
Tj
-40 to +175
°C
Tstg
-55 to +175
°C
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
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© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.B
Data Sheet
RGT00TS65D
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
Thermal Resistance IGBT Junction - Case
Rθ(j-c)
-
-
0.54
°C/W
Thermal Resistance Diode Junction - Case
Rθ(j-c)
-
-
1.42
°C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Collector - Emitter Breakdown
Voltage
Symbol
BVCES
Conditions
IC = 10μA, VGE = 0V
Unit
Min.
Typ.
Max.
650
-
-
V
Collector Cut - off Current
ICES
VCE = 650V, VGE = 0V
-
-
10
μA
Gate - Emitter Leakage Current
IGES
VGE = 30V, VCE = 0V
-
-
200
nA
VGE(th)
VCE = 5V, IC = 34.7mA
5.0
6.0
7.0
V
Tj = 25°C
-
1.65
2.1
V
Tj = 175°C
-
2.2
-
Gate - Emitter Threshold
Voltage
IC = 50A, VGE = 15V
Collector - Emitter Saturation
Voltage
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© 2014 ROHM Co., Ltd. All rights reserved.
VCE(sat)
2/11
2014.05 - Rev.B
Data Sheet
RGT00TS65D
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input Capacitance
Cies
VCE = 30V
-
2770
-
Output Capacitance
Coes
VGE = 0V
-
106
-
Reverse Transfer Capacitance
Cres
f = 1MHz
-
43
-
Total Gate Charge
Qg
VCE = 300V
-
94
-
Gate - Emitter Charge
Qge
IC = 50A
-
22
-
Gate - Collector Charge
Qgc
VGE = 15V
-
31
-
Turn - on Delay Time
td(on)
IC = 50A, VCC = 400V
-
42
-
tr
VGE = 15V, RG = 10Ω
-
68
-
Tj = 25°C
-
137
-
Inductive Load
-
62
-
td(on)
IC = 50A, VCC = 400V
-
42
-
tr
VGE = 15V, RG = 10Ω
-
68
-
Tj = 175°C
-
149
-
Inductive Load
-
76
-
Rise Time
pF
nC
ns
Turn - off Delay Time
Fall Time
Turn - on Delay Time
Rise Time
td(off)
tf
ns
Turn - off Delay Time
Fall Time
td(off)
tf
IC = 150A, VCC = 520V
Reverse Bias Safe Operating Area
RBSOA VP = 650V, VGE = 15V
FULL SQUARE
-
RG = 50Ω, Tj = 175°C
VCC ≦ 360V
Short Circuit Withstand Time
tsc
VGE = 15V
5
-
-
μs
Tj = 25°C
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© 2014 ROHM Co., Ltd. All rights reserved.
3/11
2014.05 - Rev.B
Data Sheet
RGT00TS65D
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Tj = 25°C
-
1.45
2.0
Tj = 175°C
-
1.25
-
-
54
-
ns
-
7.4
-
A
-
0.22
-
μC
-
225
-
ns
-
12.8
-
A
-
1.60
-
μC
IF = 30A
Diode Forward Voltage
Diode Reverse Recovery Time
VF
trr
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
Diode Reverse Recovery Time
trr
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
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© 2014 ROHM Co., Ltd. All rights reserved.
V
IF = 30A
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
IF = 30A
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C
4/11
2014.05 - Rev.B
Data Sheet
RGT00TS65D
lElectrical Characteristic Curves
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
Fig.2 Collector Current vs. Case Temperature
90
80
Collector Current : IC [A]
Power Dissipation : PD [W]
Fig.1 Power Dissipation vs. Case Temperature
60
50
40
30
20
Tj≦175ºC
VGE≧15V
10
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
180
1000
10µs
100
10
160
Collector Current : IC [A]
Collector Current : IC [A]
70
100µs
1
0.1
TC= 25ºC
Single Pulse
140
120
100
80
60
40
Tj≦175ºC
VGE=15V
20
0.01
0
1
10
100
1000
0
Collector To Emitter Voltage : VCE[V]
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200
400
600
800
Collector To Emitter Voltage : VCE[V]
5/11
2014.05 - Rev.B
Data Sheet
RGT00TS65D
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
150
150
Tj= 25ºC
VGE= 20V
120
105
Tj= 175ºC
135
Collector Current : IC [A]
Collector Current : IC [A]
135
VGE= 12V
VGE= 15V
90
VGE= 10V
75
60
45
VGE= 8V
30
VGE= 15V
120
105
VGE= 12V
90
75
VGE= 10V
60
45
VGE= 8V
30
15
15
0
0
0
1
2
3
4
0
5
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
60
4
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
VCE= 10V
50
Collector Current : IC [A]
VGE= 20V
40
30
20
Tj= 175ºC
Tj= 25ºC
10
0
0
2
4
6
8
10
12
IC= 100A
3
IC= 50A
2
IC= 25A
1
0
25
Gate To Emitter Voltage : VGE [V]
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VGE= 15V
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
6/11
2014.05 - Rev.B
Data Sheet
RGT00TS65D
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
20
Tj= 25ºC
IC= 100A
15
IC= 50A
10
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
IC= 25A
5
0
5
10
15
20
Tj= 175ºC
15
IC= 100A
10
IC= 50A
IC= 25A
5
0
5
20
10
Gate To Emitter Voltage : VGE [V]
20
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
Switching Time [ns]
Switching Time [ns]
15
tf
td(off)
100
td(on)
tr
td(off)
100
tf
tr
td(on)
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
10
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
Inductive ｌoad
10
0
10 20 30 40 50 60 70 80 90 100
0
Collector Current : IC [A]
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© 2014 ROHM Co., Ltd. All rights reserved.
10
20
30
40
50
Gate Resistance : RG [Ω]
7/11
2014.05 - Rev.B
Data Sheet
RGT00TS65D
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
10
1
Eoff
Eon
0.1
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
10
Eoff
1
Eon
0.1
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
Inductive ｌoad
0.01
0.01
0
0
10 20 30 40 50 60 70 80 90 100
Collector Current : IC [A]
20
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Fig.16 Typical Gate Charge
15
Cies
1000
Coes
100
Cres
10
f=1MHz
VGE=0V
Tj=25ºC
1
0.01
Gate To Emitter Voltage : VGE [V]
10000
Capacitance [pF]
10
10
5
VCC=300V
IC=50A
Tj=25ºC
0
0.1
1
10
0
100
Collector To Emitter Voltage : VCE[V]
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© 2014 ROHM Co., Ltd. All rights reserved.
10 20 30 40 50 60 70 80 90 100
Gate Charge : Qg [nC]
8/11
2014.05 - Rev.B
Data Sheet
RGT00TS65D
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
vs. Forward Voltage
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
150
400
Reverse Recovery Time : trr [ns]
Forward Current : IF [A]
135
120
105
90
75
60
45
Tj= 175ºC
30
Tj= 25ºC
15
0
VCC=400V
diF/dt=200A/µs
Inductive ｌoad
300
Tj= 175ºC
200
100
Tj= 25ºC
0
0
0.5
1
1.5
2
2.5
3
0
Forward Voltage : VF[V]
20
30
40
50
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery Current
vs. Forward Current
Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current
20
2.5
Reverse Recovery Charge : Qrr [µC]
Reverse Recovery Current : Irr [A]
10
15
Tj= 175ºC
10
5
VCC=400V
diF/dt=200A/µs
Inductive ｌoad
Tj= 25ºC
0
VCC=400V
diF/dt=200A/µs
Inductive ｌoad
2
Tj= 175ºC
1.5
1
0.5
Tj= 25ºC
0
0
10
20
30
40
50
0
Forward Current : IF [A]
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© 2014 ROHM Co., Ltd. All rights reserved.
10
20
30
40
50
Forward Current : IF [A]
9/11
2014.05 - Rev.B
Data Sheet
RGT00TS65D
lElectrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
10
D= 0.5
1
0.1
0.2
PDM
0.1
t1
0.05
0.02
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.01 Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Width : t1[s]
Fig.22 Diode Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
10
D= 0.5
0.2
1
0.1
PDM
0.1
0.05
0.01
0.0001
0.02
Single Pulse
0.01
t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.001
0.01
0.1
1
Pulse Width : t1[s]
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© 2014 ROHM Co., Ltd. All rights reserved.
10/11
2014.05 - Rev.B
Data Sheet
RGT00TS65D
lInductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
D.U.T.
VGE
10%
VG
90%
IC
10%
Fig.23 Inductive Load Circuit
td(on)
tr
ton
IF
td(off)
tf
toff
trr , Qrr
VCE
diF/dt
VCE(sat)
Irr
Fig.25 Diode Reverce Recovery Waveform
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© 2014 ROHM Co., Ltd. All rights reserved.
Fig.24 Inductive Load Waveform
11/11
2014.05 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
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equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1102A