UM6K1N
Transistors
2.5V Drive Nch+Nch MOS FET
UM6K1N
zStructure
Silicon N-channel MOS FET
zExternal dimensions (Unit : mm)
UMT6
2.0
0.9
1.3
0.65
0.65
0.7
(5)
(4)
(6)
1.25
2.1
1pin mark
(3)
(1)
(2)
0.2
0.1Min.
zFeatures
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for
portable equipment.
0.15
Each lead has same dimensions
Abbreviated symbol : K1
zApplications
Interfacing, switching (30V, 100mA)
zPackaging specifications
zInner circuit
Package
Type
(6)
(5)
TN
Basic ordering unit (pieces)
(4)
∗
Taping
Code
Gate
Protection
Diode
Tr1
3000
UM6K1N
Tr2
∗
(1)
(1)
(2)
(3)
(4)
(5)
(6)
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
IDP ∗1
PD ∗2
Tch
Tstg
Continuous
Pulsed
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Limits
30
±20
±100
±400
150
150
−55 to +150
Tr1
Tr1
Tr2
Tr2
Tr2
Tr1
Gate
Protection
Diode
Source
Gate
Drain
Source
Gate
Drain
(2)
(3)
∗ A protection diode has been built
in between the gate and the source
to protect against static electricity
when the product is in use.
Use the protection circuit when
rated voltages are exceeded.
Unit
V
V
mA
mA
mW
°C
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a)
∗
Limits
Unit
833
1042
°C / W / TOTAL
°C / W / ELEMENT
∗ With each pin mounted on the recommended lands.
Rev.B
1/3
UM6K1N
Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Symbol
Min.
Typ.
Max.
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
IDSS
Zero gate voltage drain current
Gate threshold voltage
VGS (th)
Parameter
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
−
−
−
−
5
7
−
13
9
4
15
35
80
80
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Static drain-source on-state
resistance
RDS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Conditions
Unit
µA
V
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
VGS=±20V, VDS=0V
ID= 10µA, VGS=0V
VDS= 30V, VGS=0V
VDS= 3V, ID= 100µA
ID= 10mA, VGS= 4V
ID= 1mA, VGS= 2.5V
ID= 10mA, VDS= 3V
VDS= 5V
VGS=0V
f=1MHz
VDD 5V
ID= 10mA
VGS= 5V
RL=500Ω
RG=10Ω
0.15
200m
50m
3.5V
0.1
2.5V
0.05
2V
2
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
3
4
0.1m
0
5
DRAIN-SOURCE VOLTAGE : VDS (V)
10
50
VGS=4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
4
1
0.5
0
−50 −25
0.5
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( )
20
5
2
1
0.005
0.01
0.02
0.05
0.1
0.2
DRAIN CURRENT : ID (A)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current ( )
25
50
75
100
125 150
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
10
0.5
0.001 0.002
0
CHANNEL TEMPERATURE : Tch (°C)
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
VDS=3V
ID=0.1mA
1.5
Fig.2 Typical Transfer Characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
20
3
2
2
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical Output Characteristics
50
1
0.5
15
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
1
20m
0.2m
VGS=1.5V
0
0
VDS=3V
Pulsed
100m
3V
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
4V
GATE THRESHOLD VOLTAGE : VGS(th) (V)
zElectrical characteristic curves
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
Rev.B
2/3
UM6K1N
Transistors
0.5
VDS=3V
Pulsed
0.2
ID=100mA
6
ID=50mA
5
4
3
2
0.1
0.05
Ta=−25°C
25°C
75°C
125°C
0.02
0.01
0.005
1
0.002
0
−50 −25
0.001
0.0001 0.0002
0
25
50
75
100 125
150
CHANNEL TEMPERATURE : Tch (°C)
0.05 0.1 0.2
20m
0V
5m
2m
1m
0.5m
0.1m
0.5
1
5m
2m
1m
0.5m
0.2m
0
1000
Coss
Crss
td(off)
200
100
50
20
tr
td(on)
10
5
0.5
0.1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
0.2
0.5
1
2
5
10
20
2
0.1 0.2
50
0.5
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.10 Reverse Drain Current vs.
Source-Drain Voltage ( )
1.5
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
tf
500
Ciss
2
1
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage ( )
10
5
0.5
SOURCE-DRAIN VOLTAGE : VSD (V)
1
0.2m
0
Ta=125°C
75°C
25°C
−25°C
10m
0.5
Ta=25°C
f=1MHZ
VGS=0V
Pulsed
20
CAPACITANCE : C (pF)
REVERCE DRAIN CURRENT : IDR (A)
0.005 0.01 0.02
50
50m
VGS=4V
50m
20m
Fig.8 Forward Transfer Admittance vs.
Drain Current
Ta=25°C
Pulsed
100m
VGS=0V
Pulsed
100m
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
200m
200m
0.1m
0.0005 0.001 0.002
SWITHING TIME : t (ns)
7
10m
REVERCE DRAIN CURRENT : IDR (A)
VGS=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : Yfs (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
9
8
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.12 Switching Characteristics
zSwitching characteristics measurement circuit
Pulse Width
VGS
RG
VGS
ID
D.U.T.
VDS
RL
10%
90%
90%
tr
td(on)
ton
Switching Time Test Circuit
50%
10%
VDS
VDD
Fig.13
90%
50%
10%
Fig.14
td(off)
tf
toff
Switching Time Waveforms
Rev.B
3/3
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
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such technical information.
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R1102A