PRELIMINARY
HT-0121-A
Silicon Carbide Power MOSFET
High Performance Hermetic Discrete
VDS
ID @ 25 °C
RDS(on) @ 25 °C
CPM2 N-Channel Enhancement Mode
Features
1.2 kV
28 A
80 mΩ
Package
Ultra-Fast Switching
Hermetic Seals
Flux-Free / Void-Free Packaging
Backside Isolation
High Temperature Packaging, TJ(max) = 210 °C
System Benefits
Enables Compact, Lightweight Systems
High Efficiency Operation
Reduced Thermal Requirements
Reduced System Cost
Increased Power Density
(2)
(1)
Applications
1
Aerospace
Downhole Tools
High Efficiency Converters & Motor Drives
2
(3)
3
Part Number
Package
HT-0121-A
TO-254
Maximum Ratings (Tc = 25 °C Unless Otherwise Specified)
Symbol
VDSmax
Viso
Value
Unit
Test Conditions
Drain-Source Voltage
1.2
kV
Isolation Voltage
1.7
kV
Pin to Case, AC (f = 60 Hz), 1 min
VGSmax
Gate-Source Voltage
-10/+25
V
Absolute maximum values, AC (f >1 Hz)
VGSop
Gate-Source Voltage
-5/+20
V
Recommended operational values
ID
Continuous Drain Current
28
10
EAS
Single-Pulse Avalanche Energy
PD
Maximum Power Dissipation
TC(max)
Maximum Case Temperature
225
TJ(max)
Maximum Junction Temperature
210
Tstg
1
Parameter
Storage Temperature Range
HT-0121-A Rev. 2, 03/2016
2.2
168
23
-55 to 210
A
J
W
°C
TC = 25 °C, TJ = 210 °C
TC = 185 °C, TJ = 210 °C
ID = 20 A,VDS = 50 V, L = 9.5 mH
TC = 25 °C, TJ = 210 °C
TC = 185 °C, TJ = 210 °C
PRELIMINARY
SiC MOSFET Electrical Characterization (Tc = 25 °C Unless Otherwise Specified)
Symbol
V(BR)DSS
VGS(th)
Parameter
Drain – Source Breakdown
Voltage
Gate Threshold Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
RDS(on)
Drain-Source Turn-On Resistance
Min.
Typ.
kV
3.1
1
100
10
265
80
110
207
237
7.3
Ciss
Input Capacitance
950
Coss
Output Capacitance
80
Crss
Reverse Transfer Capacitance
7.6
td(on)
Turn-On Delay Time
11
Rise Time
20
Turn-Off Delay Time
23
tfv
Fall Time
19
Eon
Turn-On Switching Loss
265
Eoff
Turn-Off Switching Loss
135
RG
Qgs
Internal Gate Resistance
Gate To Source Charge
5
15
Qgd
Gate To Drain Charge
23
Qg
Gate Charge Total
62
VDS = VGS, ID = 10 mA
VDS = VGS, ID = 10 mA , TJ = 210 C
VGS = 0 V, VDS = 1200 V
μA
250
Test Conditions
VGS = 0 V, ID = 100 μA
V
1.99
Transconductance
td(off)
Unit
1.2
gfs
trv
Max.
VGS = 0 V, VDS=1200 V, TJ = 150 C
nA
VGS = 20 V, VDS = 0 V
mΩ
VGS = 20 V, ID = 20 A, TJ = 25 °C
VGS = 20 V, ID = 20 A, TJ = 210 C
S
VGS = 20 V, ID = 20 A
pF
VGS = 0 V, VDS = 800 V
f = 1 MHz, VAC = 25 mV
ns
VDS = 800 V, VGS = -2 / +20 V
ID = 20 A
RG(ext) = 6.8 Ω, L = 856 μH
Per JEDEC24 p. 27
μJ
Ω
VGS = 0 V, f = 1 MHz, VAC= 25 mV
nC
VDS = 800 V, VGS = 0 / +20 V
ID = 20 A
Per JEDEC24 p. 27
Body Diode Electrical Characteristics (Tc = 25 °C Unless Otherwise Specified)
Symbol
2
Parameter
Value
3.3
Unit
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
32
ns
Qrr
Reverse Recovery Charge
192
nC
Irrm
Peak Reverse Recovery Current
10
A
HT-0121-A Rev. 2, 03/2016
3.1
V
Test Conditions
VGS = -5 V, ID = 10 A
VGS = -2 V, ID = 10 A
VGS = -5 V, IF = 20 A, VR = 800 V
diF/dt = 100 A/μs
PRELIMINARY
Thermal & Mechanical Characteristics
Symbol
RΘ(J-C)
Parameter
FET Thermal Resistance, J to C
W
Weight
MS
Mounting Torque
Value
Unit
1.1
°C/W
9
g
0.8
N-m
Test Conditions
6-32 Bolts
Typical Performance
100.0
180
tp ≤ 1 µs
TJ = 210 °C
140
Drain Current, ID (A)
Power Dissipation, Ptot (W)
160
120
100
80
60
40
20
10.0
tp ≤ 1 ms
1.0
DC
1
0
-50
0
50
100
150
Case Temperature, TC (°C)
200
40
10
100
1000
Drain Source Voltage, VDS (V)
250
Fig 2. Maximum Safe Operating Area
Fig 1. Maximum Power Dissipation Versus Case
Temperature
50
tp < 100 μs
VGS = 12 V
35
VGS = 20 V
VGS = 20 V
VGS = 16 V
tp < 100 μs
45
VGS = 16 V
VGS = 12 V
40
Drain Current, ID (A)
Drain Current, ID (A)
30
35
25
30
25
20
20
15
VGS = 8 V
15
10
VGS = 8 V
10
5
5
VGS = 4 V
0
0
2
4
6
8
10
12
14
16
18
Drain-Source Voltage, VDS (V)
Fig 3. Forward Output Characteristics, TJ = 25 C
3
Tc = 25 °C
0.1
HT-0121-A Rev. 2, 03/2016
VGS = 4 V
0
20
0
2
4
6
8
10
12
14
16
Drain-Source Voltage, VDS (V)
Fig 4. Forward Output Characteristics,
TJ = 200 C
18
20
PRELIMINARY
3.0E-1
VGS = 20 V
35
2.5E-1
TJ = 210 °C
On-Resistance (Ω)
Max. Drain Current, IDS (A)
30
25
20
15
10
-50
0
50
100
150
Case Temperature, TC (°C)
200
1.5E-1
1.0E-1
25 °C
0.0E+0
250
0
Norm. BD Voltage (pu)
4
3.5
3
2.5
2
1.5
1
0.5
0
0
50
100
150
200
Junction Temperature, TJ (°C)
Fig 7. Gate-Source Threshold Voltage Versus Junction
Temperature
HT-0121-A Rev. 2, 03/2016
20
30
40
50
Fig 6. On-Resistance Versus Drain Current
4.5
-50
10
Drain Current, ID (A)
Fig 5. Drain Current Derating Versus Case
Temperature.
Gate Threshold Voltage, VTH (V)
2.0E-1
5.0E-2
5
0
4
210 °C
175 °C
150 °C
1.14
1.12
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
VGS = 0 V
-50
0
50
100
150
Junction Temperature, Tj (°C)
200
Fig 8. Drain-Source Breakdown Voltage Versus Junction
Temperature
PRELIMINARY
Package Dimensions [in(mm)]
Fig. 9 Dimensions
5
HT-0121-A Rev. 2, 03/2016
PRELIMINARY
Important Notes
Some values were obtained from the CPM2-1200-S080B Rev. C device datasheet.
THE PRODUCT DESCRIBED IS AN ENGINEERING SAMPLE THAT IS NOT INTENDED FOR PRODUCTIVE USE,
IS CURRENTLY AVAILABLE FOR EVALUATION AND TESTING PURPOSES ONLY, AND IS PROVIDED “AS IS”
WITHOUT WARRANTY OF ANY KIND, INCLUDING BUT NOT LIMITED TO ANY WARRANTY OF NONINFRINGEMENT, MERCHANTABILITY, OR FITNESS FOR PARTICULAR PURPOSE. Suitability of this product for
any application may depend on product parameters not specified this document. The buyer is solely responsible for
determining such additional product details.
The data and information contained in this document is preliminary and is subject to change due to further product
evaluation and testing and/or product modifications. Accordingly, buyers are cautioned to evaluate actual products
against their needs and not to rely solely on the data and information presented in this document.
The product described has not been designed or tested for use in, and is not intended for use in, applications implanted
into the human body or in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac
defibrillators or similar emergency medical equipment, vehicle navigation, communication or control systems, or air
traffic control systems.
The product described is not eligible for Distributor Stock Rotation or Inventory Price Protection.
Copyright © 2015 - 2016 Cree Fayetteville, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree®, and Zero Recovery® are registered trademarks and the Cree logo is a
6
HT-0121-A
trademark
of Cree,
Inc. Rev. 2, 03/2016
For Purchasing: Email HighPerformanceSales@cree.com
Cree Fayetteville, Inc.
535 W Research Center Blvd
Fayetteville, AR 72701
USA Tel: +1.479.443.5759
www.apei.net
