RGTH50TS65 Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC(100°C) 25A VCE(sat) (Typ.) 1.6V PD 174W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching 3) Low Switching Loss & Soft Switching (1) 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplications lPackaging Specifications PFC Packaging UPS Reel Size (mm) - Tape Width (mm) - Power Conditioner Tube Type IH Basic Ordering Unit (pcs) 450 Taping Code C11 Marking RGTH50TS65 lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25°C IC 50 A TC = 100°C IC 25 A ICP*1 100 A TC = 25°C PD 174 W TC = 100°C PD 87 W Tj -40 to +175 °C Tstg -55 to +175 °C Collector Current Pulsed Collector Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/9 2014.05 - Rev.B Data Sheet RGTH50TS65 lThermal Resistance Values Parameter Symbol Rθ(j-c) Thermal Resistance IGBT Junction - Case Unit Min. Typ. Max. - - 0.86 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10μA, VGE = 0V Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 17.5mA 4.5 5.5 6.5 V Tj = 25°C - 1.6 2.1 V Tj = 175°C - 2.1 - Gate - Emitter Threshold Voltage IC = 25A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/9 2014.05 - Rev.B Data Sheet RGTH50TS65 lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1410 - Output Capacitance Coes VGE = 0V - 57 - Reverse Transfer Capacitance Cres f = 1MHz - 22 - Total Gate Charge Qg VCE = 300V - 49 - Gate - Emitter Charge Qge IC = 25A - 15 - Gate - Collector Charge Qgc VGE = 15V - 19 - Turn - on Delay Time td(on) IC = 25A, VCC = 400V - 27 - tr VGE = 15V, RG = 10Ω - 38 - Tj = 25°C - 94 - Inductive Load - 50 - td(on) IC = 25A, VCC = 400V - 27 - tr VGE = 15V, RG = 10Ω - 38 - Tj = 175°C - 107 - Inductive Load - 65 - Rise Time pF nC ns Turn - off Delay Time Fall Time Turn - on Delay Time Rise Time td(off) tf ns Turn - off Delay Time Fall Time td(off) tf IC = 100A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 60Ω, Tj = 175°C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 3/9 2014.05 - Rev.B Data Sheet RGTH50TS65 lElectrical Characteristic Curves Fig.1 Power Dissipation vs. Case Temperature Fig.2 Collector Current vs. Case Temperature 200 60 50 160 Collector Current : IC [A] Power Dissipation : PD [W] 180 140 120 100 80 60 40 40 30 20 10 Tj≦175ºC VGE≧15V 20 0 0 0 25 50 75 100 125 150 0 175 50 75 100 125 150 175 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 140 1000 10µs 120 100 Collector Current : IC [A] Collector Current : IC [A] 25 10 100µs 1 0.1 TC= 25ºC Single Pulse 100 80 60 40 20 0.01 Tj≦175ºC VGE=15V 0 1 10 100 1000 0 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE[V] 4/9 2014.05 - Rev.B Data Sheet RGTH50TS65 lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 100 100 Tj= 175ºC VGE= 12V VGE= 20V 80 Collector Current : IC [A] Collector Current : IC [A] Tj= 25ºC VGE= 15V 60 VGE= 10V 40 20 VGE= 8V VGE= 20V 80 VGE= 15V VGE= 12V 60 40 VGE= 10V 20 VGE= 8V 0 0 0 1 2 3 4 0 5 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics 2 3 4 5 Collector To Emitter Voltage : VCE[V] Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 50 Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE= 10V Collector Current : IC [A] 1 40 30 20 Tj= 175ºC 10 Tj= 25ºC 0 0 2 4 6 8 10 IC= 50A 3 IC= 25A 2 IC= 12A 1 0 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. VGE= 15V 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 5/9 2014.05 - Rev.B Data Sheet RGTH50TS65 lElectrical Characteristic Curves 20 Tj= 25ºC IC= 50A 15 IC= 25A 10 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage IC= 12A 5 0 5 10 15 20 Tj= 175ºC 15 IC= 50A 10 IC= 25A IC= 12A 5 0 5 20 10 Gate To Emitter Voltage : VGE [V] 15 20 Gate To Emitter Voltage : VGE [V] Fig.12 Typical Switching Time vs. Gate Resistance Fig.11 Typical Switching Time vs. Collector Current 1000 1000 Switching Time [ns] Switching Time [ns] VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive load td(off) 100 tf tf 100 td(off) tr td(on) VCC=400V, IC=25A VGE=15V, Tj=175ºC Inductive load td(on) tr 10 10 0 10 20 30 40 50 0 Collector Current : IC [A] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [Ω] 6/9 2014.05 - Rev.B Data Sheet RGTH50TS65 lElectrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 1 Eoff Eon 0.1 VCC=400V, VGE=15V RG=10Ω, Tj=175ºC Inductive load 0.01 Eoff 1 Eon 0.1 VCC=400V, IC=25A VGE=15V, Tj=175ºC Inductive load 0.01 0 10 20 30 40 50 0 Collector Current : IC [A] 20 30 40 50 Gate Resistance : RG [Ω] Fig.15 Typical Capacitance vs. Collector To Emitter Voltage Fig.16 Typical Gate Charge 15 Cies 1000 Coes 100 10 Cres f=1MHz VGE=0V Tj=25ºC 1 0.01 Gate To Emitter Voltage : VGE [V] 10000 Capacitance [pF] 10 10 5 VCC=300V IC=25A Tj=25ºC 0 0.1 1 10 0 100 Collector To Emitter Voltage : VCE[V] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Charge : Qg [nC] 7/9 2014.05 - Rev.B Data Sheet RGTH50TS65 lElectrical Characteristic Curves Fig.17 IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ºC/W] 10 D= 0.5 1 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.0001 0.02 0.01 Single Pulse 0.001 t2 Duty=t1/t2 Peak Tj=PDM×ZthJC+TC 0.01 0.1 1 Pulse Width : t1[s] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 8/9 2014.05 - Rev.B Data Sheet RGTH50TS65 lInductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. VGE 10% VG 90% IC 10% Fig.18 Inductive Load Circuit td(on) tr ton td(off) tf toff VCE VCE(sat) Fig.19 Inductive Load Waveform www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 9/9 2014.05 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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