APM4927K
®
Dual P-Channel Enhancement Mode MOSFET
Pin Description
Features
D1
•
D1
-30V/-9A,
D2
D2
RDS(ON)= 15mΩ (typ.) @ VGS=-10V
RDS(ON)= 28mΩ (typ.) @ VGS=-4.5V
•
•
•
S1
G1
Super High Dense Cell Design
S2
G2
Reliable and Rugged
Top View of SOP−8
Lead Free and Green Devices Available
(1)
S1
(RoHS Compliant)
Applications
•
(3)
S2
(2)
G1
(4)
G2
Power Management in MB/NB DC-DC Converter Application.
D1
(7)
D1
(8)
D2
(5)
D2
(6)
P-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM4927
Assembly Material
Handling Code
Temperature Range
Package Code
APM4927 K :
APM4927
XXXXX
XXXXX - Date Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  Sinopower Semiconductor, Inc.
Rev. A.1 - Aug., 2010
1
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APM4927K
®
Absolute Maximum Ratings
(TA = 25°C unless otherwise noted)
Parameter
Symbol
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±25
IDa
Continuous Drain Current
a
Pulsed Drain Current
IDM
a
IS
b
IAR
b
EAR
TJ
TA=70°C
-7.5
VGS=-10V
-35
-2.5
Avalanche Current
-25
Repetitive Avalanche Energy (L=0.3mH)
94
Maximum Junction Temperature
150
Storage Temperature Range
PDa
Maximum Power Dissipation
RθJL
-9
Diode Continuous Forward Current
TSTG
RθJAa,c
TA=25°C
Unit
V
A
mJ
°C
-55 to 150
TA=25°C
2.5
TA=70°C
1.6
Thermal Resistance-Junction to Ambient
t ≤ 10s
50
Thermal Resistance-Junction to Lead
Steady State
25
W
°C/W
Note a : Surface Mounted on 1in pad area, t ≤ 10sec.
o
o
Note b : UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C).
Note c : Maximum under Steady State conditions is 75 °C/W.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Conditions
APM4927K
Min.
Typ.
Max.
-30
-
-
-
-
-1
-
-
-30
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
d
VGS=0V, IDS=-250µA
VDS=-24V, VGS=0V
TJ=85°C
V
µA
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
-1
-2
-2.5
V
Gate Leakage Current
VGS=±25V, VDS=0V
-
-
±100
nA
VGS=-10V, IDS=-9A
-
15
19
VGS=-4.5V, IDS=-6.5A
-
28
37
ISD=-2.5A, VGS=0V
-
-0.75
-1.1
V
-
20
-
ns
-
11
-
nC
Drain-Source On-state Resistance
mΩ
Diode Characteristics
VSD
trr
d
e
Qrr
e
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Copyright  Sinopower Semiconductor, Inc.
Rev. A.1 - Aug., 2010
ISD=-9A,dlSD/dt=100A/µs
2
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APM4927K
®
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Conditions
APM4927K
Min.
Typ.
Max.
Unit
Dynamic Characteristics e
RG
Gate Resistance
VGS=0V,V DS=0V,F=1MHz
3
5
7
Ciss
Input Capacitance
-
2070
-
Cos s
Output Capacitance
-
320
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
-
250
-
td(ON)
Turn-on Delay Time
-
13
24
-
13
24
-
59
107
-
29
53
-
35
50
-
4.7
-
-
9.3
-
tr
Turn-on Rise Time
t d(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
Qg
VDD =-15V, RL=15Ω,
I DS=-1A, V GEN =-10V,
RG=6Ω
Ω
pF
ns
e
Total Gate Charge
Q gs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-15V, V GS=-10V,
I DS=-9A
nC
Note d : Pulse test ; pulse width≤300µ s, duty cycle≤2%.
Note e : Guaranteed by design, not subject to production testing.
Copyright  Sinopower Semiconductor, Inc.
Rev. A.1 - Aug., 2010
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APM4927K
®
Typical Operating Characteristics
Power Dissipation
Drain Current
3.0
10
8
-ID - Drain Current (A)
Ptot - Power (W)
2.5
2.0
1.5
1.0
6
4
2
0.5
o
TA=25 C,VG=-10V
o
0.0
TA=25 C
0
20
0
40
60
80 100 120 140 160
0
20
Tj - Junction Temperature (°C)
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
-ID - Drain Current (A)
300µs
1ms
10ms
100ms
1s
0.1
DC
o
TA=25 C
0.01
0.01
0.1
1
10
80
100 120 140 160
Thermal Transient Impedance
100
1
60
Tj - Junction Temperature (°C)
Safe Operation Area
10
40
100
-VDS - Drain - Source Voltage (V)
Copyright  Sinopower Semiconductor, Inc.
Rev. A.1 - Aug., 2010
2
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
Mounted on 1in pad
o
RθJA : 50 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4927K
®
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
50
35
VGS= -4.5,-5,-6,-7,-8,-9,-10V
45
RDS(ON) - On - Resistance (mΩ)
-ID - Drain Current (A)
30
-4V
25
20
15
-3.5V
10
5
-3V
0
0.0
0.5
1.0
1.5
2.0
40
VGS=-4.5V
35
30
25
20
VGS=-10V
15
10
5
2.5
0
3.0
0
5
10
15
20
-ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
35
1.6
IDS=-9A
IDS= -250 µA
45
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)
30
-VDS - Drain - Source Voltage (V)
50
40
35
30
25
20
15
10
25
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2
3
4
5
6
7
8
9
0.0
-50
10
-VGS - Gate - Source Voltage (V)
Copyright  Sinopower Semiconductor, Inc.
Rev. A.1 - Aug., 2010
-25
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
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APM4927K
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.00
40
VGS = -10V
IDS = -9A
-IS - Source Current (A)
Normalized On Resistance
1.75
1.50
1.25
1.00
0.75
0.50
10
o
Tj=150 C
o
Tj=25 C
1
0.25
o
0.00
-50 -25
RON@Tj=25 C: 15mΩ
0
25
50
75
0.1
0.0
100 125 150
0.8 1.0
1.2 1.4
1.6
Capacitance
Gate Charge
10
-VGS - Gate - source Voltage (V)
2400
C - Capacitance (pF)
0.6
-VSD - Source - Drain Voltage (V)
Frequency=1MHz
Ciss
2000
1600
1200
800
Coss
400
9
VDS= -15V
IDS= -9A
8
7
6
5
4
3
2
1
Crss
0
0.4
Tj - Junction Temperature (°C)
2800
0
0.2
5
10
15
20
25
0
0
30
-VDS - Drain - Source Voltage (V)
Copyright  Sinopower Semiconductor, Inc.
Rev. A.1 - Aug., 2010
5
10
15
20
25
30
35
QG - Gate Charge (nC)
6
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APM4927K
®
Package Information
SOP-8
-T-
SEATING PLANE < 4 mils
D
E
E1
SEE VIEW A
h X 45
°
c
A
0.25
b
GAUGE PLANE
SEATING PLANE
A1
A2
e
L
VIEW A
S
Y
M
B
O
L
SOP-8
MILLIMETERS
MIN.
INCHES
MAX.
A
MIN.
MAX.
1.75
0.069
0.004
0.25
0.010
A1
0.10
A2
1.25
b
0.31
0.51
0.012
0.020
c
0.17
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
5.80
6.20
0.228
0.244
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
0
0°
8°
0°
E1
e
0.049
1.27 BSC
0.050 BSC
8°
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Copyright  Sinopower Semiconductor, Inc.
Rev. A.1 - Aug., 2010
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APM4927K
®
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
A
H
330.0±2.00 50 MIN.
SOP-8
T1
C
d
D
W
E1
12.4+2.00 13.0+0.50
-0.00
-0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10
P0
P1
P2
4.0±0.10
8.0±0.10
2.0±0.05
D0
1.5+0.10
-0.00
D1
1.5 MIN.
F
5.5±0.05
T
A0
B0
K0
0.6+0.00 6.40±0.20 5.20±0.20 2.10±0.20
-0.40
(mm)
Devices Per Unit
Package Type
Unit
Quantity
SOP-8
Tape & Reel
2500
Copyright  Sinopower Semiconductor, Inc.
Rev. A.1 - Aug., 2010
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APM4927K
®
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Classification Profile
Copyright  Sinopower Semiconductor, Inc.
Rev. A.1 - Aug., 2010
9
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APM4927K
®
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
60-150 seconds
217 °C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak
(Tp)*
package
body
Temperature
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
3
Package
Volume mm
Thickness
<350
<2.5 mm
235 °C
≥2.5 mm
Volume mm
≥350
220 °C
220 °C
3
220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
1.6 mm – 2.5 mm
≥2.5 mm
Volume mm
<350
260 °C
260 °C
250 °C
3
Volume mm
350-2000
260 °C
250 °C
245 °C
3
Volume mm
>2000
260 °C
245 °C
245 °C
3
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245°C
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818
Fax: 886-3-5642050
Copyright  Sinopower Semiconductor, Inc.
Rev. A.1 - Aug., 2010
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