SM9435PSK
P-Channel Enhancement Mode MOSFET
Pin Description
Features
D
·
-30V/-5.4A ,
RDS(ON)=58mW(max.) @ VGS=-10V
RDS(ON)=86mW(max.) @ VGS=-4.5V
S
· Reliable and Rugged
· Lead Free and Green Devices Available
S
D
D
G
Top View of SOP - 8
(RoHS Compliant)
·
S
D
ESD Protection
( 5,6,7,8 )
D D DD
Applications
·
Power Management in Notebook Computer,
(4)
G
Portable Equipment and Battery Powered
Systems
S S S
(1, 2, 3)
P-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G: Halogen and Lead Free Device
SM9435PS
Assembly Material
Handling Code
Temp. Range
Package Code
SM9435PS K :
9435
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
1
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SM9435PSK
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
V GSS
Gate-Source Voltage
±20
ID*
I DM *
Continuous Drain Current
Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD *
Maximum Power Dissipation
R qJA*
V GS=-10V
-5.4
-21
-2
150
-55 to 150
Thermal Resistance-Junction to Ambient
TA=25°C
2.5
TA=100°C
1
t £ 10sec
50
80
Steady state
Unit
V
A
A
°C
W
°C/W
Note *：Surface Mounted on 1in 2 pad area, t £ 10sec.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
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SM9435PSK
Electrical Characteristics
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Test Condition
Min.
Typ.
Max.
Unit
-30
-
-
V
-
-
-1
-
-
-30
-1
-1.5
-2.3
V
mA
Static Characteristics
BV DSS
IDSS
V GS(th)
IGSS
Drain-Source Breakdown Voltage VGS =0V, ID S=-250mA
Zero Gate Voltage Drain Current
a
Tj =85°C
mA
Gate Threshold Voltage
VDS=VGS, IDS =-250mA
Gate Leakage Current
VGS =±20V, V DS=0V
-
-
±10
VGS =-10V, IDS=-5.4A
-
46
58
VGS =-4.5V, IDS=-2A
-
64
86
ISD =-1A, VGS =0V
-
-
-1.3
-
13
-
-
1.3
-
-
3.1
-
-
642
-
-
76
-
-
66
-
-
8
-
-
13
-
-
26
-
-
7
-
-
13
-
ns
-
7
-
nC
RDS(ON) a Drain-Source On-state Resistance
VSD
VDS=-24V, V GS=0V
Diode Forward Voltage
Gate Charge Characteristics
mW
V
b
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-15V, V GS=-10V,
IDS=-5.4A
nC
Dynamic Characteristics b
Ciss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
t d(OFF)
Turn-off Delay Time
Tf
Turn-off Fall Time
t rr
Reverse Recovery Time
Q rr
Reverse Recovery Charge
VGS =0V,
VDS=-15V,
Frequency=1.0MHz
VDD=-15V, RL =15W,
IDS=-1A, VGEN=-10V,
RG=6W
IDS=-5.4A, dl SD/dt=100A/ms
pF
ns
Note a：Pulse test; pulse width£300ms, duty cycle£2%.
Note b：Guaranteed by design, not subject to production testing.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
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SM9435PSK
Typical Characteristics
Power Dissipation
Drain Current
6
2.5
5
-ID - Drain Current (A)
3.0
Ptot - Power (W)
2.0
1.5
1.0
0.5
4
3
2
1
o
o
0.0
TA=25 C
0
20
40
60
80
0
100 120 140 160
20
40
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Li
m
it
10
Rd
s(
on
)
-ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
300ms
1
1ms
10ms
100ms
1s
0.1
DC
o
TA=25 C
0.01
0.01
T A=25 C,VG=-10V
0.1
1
10
Duty = 0.5
1
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
2
0.01
1E-4
100 300
-VDS - Drain - Source Voltage (V)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
2
Mounted on 1in pad
o
RqJA :50 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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SM9435PSK
Typical Characteristics (Cont.)
Output Characteristics
21
100
VGS=-4,-5,-6,-7,-8,-9,-10V
90
18
-3.5V
RDS(ON) - On - Resistance (mW)
-ID - Drain Current (A)
Drain-Source On Resistance
15
12
-3V
9
6
-2.5V
3
0
0.0
1.0
1.5
2.0
2.5
60
VGS=-10V
50
40
30
20
3.0
0
4
8
12
16
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
IDS= -5.4A
20
IDS =-250mA
1.4
120
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mW)
VGS=-4.5V
70
-2V
0.5
140
100
80
60
40
20
80
2
3
4
5
6
7
8
9
1.0
0.8
0.6
0.4
0.2
-50 -25
10
-VGS - Gate - Source Voltage (V)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
1.2
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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SM9435PSK
Typical Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
2.0
1.8
IDS = -5.4A
10
1.6
-IS - Source Current (A)
Normalized On Resistance
20
VGS = -10V
1.4
1.2
1.0
0.8
0.6
o
Tj=150 C
o
Tj=25 C
1
0.4
o
0.2
-50 -25
RON@Tj=25 C: 46mW
0
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
900
10
Frequency=1MHz
-VGS - Gate-source Voltage (V)
C - Capacitance (pF)
700
Ciss
600
500
400
300
200
100 Crss
0
VDS= -15V
9
800
0
Coss
5
10
15
20
25
6
5
4
3
2
1
0
2
4
6
8
10
12
14
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
7
0
30
IDS= -5.4A
8
6
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SM9435PSK
Avalanche Test Circuit and Waveforms
VDS
tAV
L
DUT
EAS
VDD
RG
VDD
IAS
tp
IL
VDS
0.01W
tp
VDSX(SUS)
Switching Time Test Circuit and Waveforms
VDS
RD
td(on) tr
DUT
RG
td(off) tf
VGS
10%
VGS
VDD
tp
90%
VDS
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
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SM9435PSK
Package Information
SOP-8
-T-
SEATING PLANE < 4 mils
D
E
E1
SEE VIEW A
h X 45
°
A1
A
A2
c
0.25
b
e
GAUGE PLANE
SEATING PLANE
L
VIEW A
S
Y
M
B
O
L
A
RECOMMENDED LAND PATTERN
1.27
SOP-8
MILLIMETERS
INCHES
MAX.
1.75
MIN.
-
-
MAX.
0.069
0.10
0.25
0.004
0.010
A2
1.25
-
0.049
-
b
0.31
0.51
0.012
0.020
c
0.17
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
E1
5.80
6.20
0.228
0.244
3.80
4.00
0.150
0.157
A1
MIN.
e
1.27 BSC
2.2
5.74
2.87
0.050 BSC
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
0
0°
8°
0°
8°
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
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0.635
0.8
UNIT: mm
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SM9435PSK
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
B
A
OD1 B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
SOP-8
A
330.0±
2.00
H
T1
C
d
D
W
E1
F
12.4+2.00 13.0+0.50
-0.00
-0.20 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05
50 MIN.
P0
P1
P2
4.0±0.10
8.0±0.10
2.0±0.05
D0
1.5+0.10
-0.00
D1
1.5 MIN.
T
A0
B0
K0
0.6+0.00 6.40±0.20 5.20±0.20 2.10±0.20
-0.40
(mm)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
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SM9435PSK
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Classification Profile
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2014
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SM9435PSK
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
60-150 seconds
217 °C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak
(Tp)*
package
body
Temperature
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm
<350
3
Volume mm3
³350
<2.5 mm
235 °C
220 °C
³2.5 mm
220 °C
220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Volume mm 3
<350
260 °C
260 °C
250 °C
Package
Thickness
<1.6 mm
1.6 mm – 2.5 mm
³2.5 mm
Volume mm3
350-2000
260 °C
250 °C
245 °C
Volume mm 3
>2000
260 °C
245 °C
245 °C
Reliability Test Program
Test item
SOLDERABILITY
HTRB
HTGB
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818
Fax: 886-3-5642050
Copyright ã Sinopower Semiconductor, Inc.
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