29.04.2014
Science Museum, London
CH-RD.S6, Iulian Nistor; CHSEM, Munaf Rahimo, 12 Mai 2014
ABB Corporate Research Switzerland
Overview on Latest Development of
ABB’s Power Semiconductors
Technology and Research Topics
Outline
§
Introduction
§
ABB and its Swiss Corporate Research Center
§
Types of Power Semiconductor Devices
§
Power Semiconductor Technology Drivers
§
ABB’s research in Power Semiconductors
§
§
Bipolar Technologies
§
BiMOS Technologies
§
Wide Bandgap Technologies
Conclusion
© ABB Group
April 29, 2014 | Slide 2
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29.04.2014
A global leader in power and automation technologies
Leading market positions in main businesses
$ 39
billion
+150,000
In revenue
(2012)
employees
Formed
in
Present
in
+100
countries
1988
merger of Swiss (BBC, 1891)
and Swedish (ASEA, 1883)
engineering companies
© ABB Group
April 29, 2014 | Slide 3
How ABB is organized
Five global divisions
© ABB Group
April 29, 2014 | Slide 4
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Innovation is key to ABB’s competitive advantage
Leadership built on consistent R&D investment
§
§
§
More than $1.4 billion invested annually in R&D
8,000 scientists and engineers
Collaboration with 70 universities
© ABB Group
April 29, 2014 | Slide 5
Fashioning the world we will live in tomorrow
Tackling challenges with customers and partners
§
R&D programs focus on incremental
and breakthrough developments to
address challenges including:
§
Integrating renewable power
sources into the grid
§
Enhancing power network
efficiency, reliability and flexibility
•
Improving industrial resource
efficiency and asset productivity
•
Optimizing flexibility and reliability
© ABB Group
April 29, 2014 | Slide 6
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29.04.2014
7 Global ABB Corporate Research Centers
About 800 researchers worldwide
Västeras (S)/Oslo (N)
Ladenburg (D)
Krakau (PL)
Baden-Dättwil CH
Raleigh (USA)
Bangalore (IND)
Peking/
Schanghai (CN)
© ABB Group
April 29, 2014 | Slide 7
Corporate Research Center Switzerland
Key Facts:
Focus Research Areas:
§
Automation
§
§
Founded in 1967
Located in Daettwil near Baden
224 Employees by end of 2013
§
160 interns/diploma students
§
Energy & Materials
Power Electronics
Power Products & Sensors
§
/PhD`s in 2013
§
> 40 nationalities today
§
§
§
© ABB Group
April 29, 2014 | Slide 8
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The Swiss Lab in the Global Landscape
ABB Corporate Research
Global Research Lab
Research Areas
Local Labs
Baden-Dättwil
Control
Software
Communication
Research Areas
Västerås/Oslo
Materials
Ladenburg
Switching
Krakow
Electromagnetics
Raleigh/NC
Sensors
Mechanics
Bangalore
Power Electronics
Beijing/Shanghai
Semiconductors
© ABB Group
April 29, 2014 | Slide 9
Power Electronics and
Power Semiconductors
© ABB Group
April 29, 2014 | Slide 10
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Department Power Electronics
From Semiconductor Component to Power Conversion
System
Developing new & innovative, reliable, cost effective and energy efficient
power electronics solutions for renewables, industry and transportation
Power Electronics
§
Semiconductors Device Design and Device Processing
§
Semiconductor Packaging Technologies
§
Method and Tools for Reliability Prediction and Experimental Verification
§
Hardware Integration Technologies (incl. Cooling, Passive Components)
§
Converter Hardware Design & Prototyping
§
Advanced Control Methods & Optimization of Power Converter Configurations
© ABB Group
April 29, 2014 | Slide 11
Types of Power Semiconductors Devices
Voltage, Current, Frequency, Controllability
© ABB Group
April 29, 2014 | Slide 12
Today`s evolving
devices
Power conversion
applications
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29.04.2014
Types of Power Semiconductors Devices
Voltage, Current, Frequency, Controllability
Thyristor
§
minority carrier à slow
§
Lowest Fwd V due to positive
feedback
§
Difficult to turn off
IGBT
§
minority carrier à slow
§
Low Forward Voltage at high
Current
§
Voltage Driven
BJT
MOSFET
§
minority carrier à slow
§
Majority carrier à fast
§
Low Fwd Voltage at high I.
§
High RON at high V. (~500V)
§
Current Driven, IC = b IB
§
Voltage Driven
§
Supplanted by IGBT
© ABB Group
April 29, 2014 | Slide 13
The Global Semiconductor Market
Few Billion
CHF
© ABB Group
April 29, 2014 | Slide 14
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Evolution of Silicon Based Power Devices
PCT/Diode
Bipolar
Technologies
evolving
GTO
IGCT
evolving
BJT
MOSFET
evolving
MOS
Technologies
IGBT
evolving
Ge → Si
1960
1970
1980
1990
2000
2010
© ABB Group
April 29, 2014 | Slide 15
Power Semiconductor
Technology Trends
© ABB Group
April 29, 2014 | Slide 16
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Power Electronics Application Trends
§
Traditional: More Compact and Powerful Systems
§
Modern: Better Quality and Reliability
§
Efficient: Lower Losses
§
Custom: Niche and Special Applications
§
Solid State: DC Breakers, Transformers
§
Environmental: Renewable Energy Sources, Electric Vehicles
© ABB Group
April 29, 2014 | Slide 17
Performance Requirements for Power Devices
n
n
n
Power Density Handling Capability:
n
Low on-state and switching losses (technology curve: traditional focus)
n
High operating temperatures
n
Low thermal resistance
Controllable and Soft Switching:
n
Good turn-on controllability
n
Soft and controllable turn-off and low EMI
Ruggedness and Reliability:
n
High turn-off current capability
n
Robust short circuit mode for IGBTs
n
Good surge current capability
n
Good current / voltage sharing between paralleled / series devices
n
Stable blocking behaviour and low leakage current
n
Low “Failure In Time” FIT rates
n
Compact, powerful and reliable packaging
© ABB Group
April 29, 2014 | Slide 18
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Power Semiconductor Device Technology Platforms
active area
(main electrode)
gate pad (control electrode)
substrate (silicon)
junction termination
(“isolation of active area”)
© ABB Group
April 29, 2014 | Slide 19
Power Semiconductor Package Technology Platforms
Heat dissipation
• Interconnections
• Advanced cooling concepts
High Voltage Insulation
• Partial Discharges
• HV insulating
• Creepage distances
© ABB Group
April 29, 2014 | Slide 20
Insulated
Powerful, Reliable,
Compact,
Application specific
Electrical distribution
• Interconnections
• Power / Signal terminals
• Low electrical parasitics
Encapsulation/ protection
• Hermetic / non-hermetic
• Coating / filling materials
Press Pack
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Latest developments in
BiMOS Technologies
FWD1
S1
S3
S5
S2
S4
S6
VDC
© ABB Group
April 29, 2014 | Slide 21
The IGBT/Diode carries on developing ….
Next 10 Year
Technologies
Planar
Enhancement
Cell Design
Cell Enh.
Trench
Trench
IGBT Technology
SOA
Higher Temp
> 150°C
NPT
Bulk Design
SPT/FS
PT
Integration
BIGT
Silicon Thickness Limit (little
more to gain)
6500V
4500V
3300V
2500V
Ratings
1700V
1200V
600V
1990
1995
2000
2005
2010
2015
© ABB Group
April 29, 2014 | Slide 22
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The Diode Continues to Plays Catch up ….
CAL
Anode and
Lifetime
Profiling
Combined
Anode/Lifetime
Next 10 Year
Technologies
EMCON
Diode Technology
Higher
Junction
Temperature
SOA
SPT
Bulk Design
Cathode
Structuring
FCE
FS (Thin
Wafer)
PT
6500V
4500V
3300V
2500V
Ratings
1700V
1200V
600V
1990
1995
2000
2005
2010
2015
© ABB Group
April 29, 2014 | Slide 23
Losses (Bulk Design): Device Thickness for IGBT
For further loss reduction by thickness reduction, today's power devices
are very close to their theoretical limits
Further small reductions are only possible by introducing anode shorts for
improved softness (FCE / BIGT concepts)
© ABB Group
April 29, 2014 | Slide 24
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Cell Design Optimization for Lower Losses
Next Generation BiMOS
Plasma
Increase
Basic enhancement of planar and trench cell designs
ABB`s first
Enhanced Trench
Cell rated at 3300V
& Turn-off
© ABB Group
April 29, 2014 | Slide 25
Future Concepts: Re-visiting BiMOS Thyristors
The Insulated Gate Switched Thyristor (IGST)
§ Towards the Thyristor Limit: Further on-state losses reductions
§ Turn-off in Transistor Mode with no Short Circuit Capability
3D TCAD simulation of IGST
(ABB Research Centre)
Thyristor
Mode
© ABB Group
April 29, 2014 | Slide 26
6.5kV IGST First Prototype
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29.04.2014
High Operating Temperatures
§
1200V IGBT Turn-off at 200°C
Current trend targets increase in
operating temperature for high power
§
600V – 1700V (150°C → 175°C)
§
3300V – 6500V (125°C → 150°C)
§ Leakage current and SOA are the most
critical chip parameter for this trend
§ Leakage dependent technologies for
enabling higher operating temperatures
§ IGBT Bipolar Gain reduction (anode/buffer
doping profiles) – critical for stable operation
§ Junction Termination and Passivation (semiinsulation layers)
§ Diode Anode and Lifetime Profiling
© ABB Group
April 29, 2014 | Slide 27
The Bimode Insulated Gate Transistor (BIGT)
integrates an IGBT & RC-IGBT in one structure to eliminate snap-back effect
IGBT Turn-off
Diode Reverse
Recovery
© ABB Group
April 29, 2014 | Slide 28
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The BiGT concept
Integration of IGBT and diode in the same silicon increases the power density.
IGBTs + diodes
§
RC IGBTs
TODAY, in most applications, the diode is the limiting factor due to the
area restrictions in the classical IGBT:Diode ratio approach (2:1 or 1:1 )
§
High losses for regenerative applications
§
Softness / SOA performance
§
Surge current capability
© ABB Group
April 29, 2014 | Slide 29
The BIGT StakPak for the Hybrid HVDC Breaker
§ BIGT StakPak Breaking Current increase demonstration:
§ BIGT Soft version for EVENT SWITCHING Applications
§ Breaking current capability of 19.1kA verified for 6-sub StakPak.
§ Double the equivalent IGBT module capability
© ABB Group
April 29, 2014 | Slide 30
BIGT Submodule
VCES = 4500V, Irated = 3000 A
15
29.04.2014
Latest developments in
Bipolar Technologies
R
L
S1
S3
S5
S2
S4
S6
Dclamp Ls
VR
Cclamp
Clamp
Network
FWD6
© ABB Group
April 29, 2014 | Slide 31
Bipolar Device Development Trends
Area
Up to 125mm
PCT Technology
Next 10 Year
Technologies
Anode and
Lifetime
Profiling
Layout Design
Area
Up to 150mm
Voltage
Up to 8.5kV
Higher Temp.
Improved Package
Integration
RB/RC/FCE
IGCT/Diode
Technology
Hard Driven GTO
Asymmetric IGCT
4.5kV-6.5kV
RC & RB
IGCT
HPT
High Voltage10kV
Large Area 150mm
Low Losses
1990
1995
2000
2005
2010
2015
© ABB Group
April 29, 2014 | Slide 32
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29.04.2014
Phase Controlled Thyristors (PCT)
New level UHVDC transmission
“Xiangjiaba and Shanghai in China”
(7GW, ±800 kV, 4200A)
150mm RB PCT:
8500 V/4200 A/50 kA surge
Termination
© ABB Group
April 29, 2014 | Slide 33
New Snow Flake gate pattern design
Cathode
Gate
Integrated Gate Commutated Thyristor (IGCT)
The High Power Technology (HPT)
§
IGCTs offers low conduction losses and hard turn-off switching
§
High Power Technology HPT Improves the SOA capability due to corrugated
base junction profile
§
HPT Technology is enabler for
§
Larger wafer diameters ~ 150mm
§
Higher voltages ~ 10kV
§
Higher op. temperatures ~140°C
§
Integration: RB & RC IGCTs
§
Losses: 1V initiative
Standard IGCT
91mm 10kV IGCT Turn-off
HPT IGCT for high SOA
Turn-off current density
© ABB Group
April 29, 2014 | Slide 34
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150mm 4.5kV IGCT
Record discrete device turn-off power
91mm
150mm
150mm 4.5kV RC-IGCT
(>9kA turn-off capability)
© ABB Group
April 29, 2014 | Slide 35
10kV IGCT (100mm)
Record discrete device turn-off power
§
Very high voltage converters would benefit from simplified topologies if high voltage Si power
semiconductors would be available (2L- instead of 3L, 5L…)
§
ABB has developed a 10kV Si IGCT technology showing very good blocking capability and record SOA
(max. 6kV/3250A, at 130°C, Li=13uH)
10kV GCT Blocking
10kV GCT Turn-off
© ABB Group
April 29, 2014 | Slide 36
HPT IGCT Design
18
29.04.2014
Positioning the IGCT for Modern Application Trends
Modern requirements for Multi-Level topologies operating at lower
frequencies and high efficiency are driving the trend for lower
conduction losses and / or lower voltage ratings
© ABB Group
April 29, 2014 | Slide 37
Plasma Engineering of IGCTs (1V Initiative)
IGCT losses were optimized traditionally for 2- and 3-level VSC
topologies operating at relatively higher switching frequencies
Anode Engineering
(Increasing Injection Efficiency)
IGCT Plasma Engineering
4.5kv 91mm IGCT
Technology Curve
© ABB Group
April 29, 2014 | Slide 38
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29.04.2014
2.5kV – 6.5kV IGCT 1V Optimization
TCAD Simulations 91mm IGCT @ 125°C
Prototypes On-state values
p
gate cathode
n+
p
Diode GCT
n+
© ABB Group
April 29, 2014 | Slide 39
anode
n-
Prototypes Turn-off curves
n+
GCT
Diode
n p+
3.3kV 91mm RC-IGCT (ABB Research Centre and ABB Semiconductors)
Reverse Blocking RB-IGCT for LV Circuit Breaker
2500V 91mm
RB-IGCT
(ABB Research Centre and ABB
Semiconductors)
© ABB Group
April 29, 2014 | Slide 40
On-state IV curves
Turn-off curves
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29.04.2014
The Bimode Gate Commutated Thyristor “BGCT”
Separation Area (SiO2)
Diode Anode
P
GCT Cathode
N+
Gate
Diode Anode
N+
N+
P
P
GCT Cathode
N+
N+
P
N+
NN
N+
Diode Cathode
N+
Diode Cathode
P+
GCT Anode
Diode
IGCT
Diode
IGCT
P+
GCT Anode
Diode
IGCT
TCAD simulation of Plasma distribution in IGCT (top) and Diode
(bottom) modes (ABB Research Centre)
© ABB Group
April 29, 2014 | Slide 41
The 4500V BGCT Prototypes Demonstration
38mm
(ABB Research Centre and ABB
Semiconductors)
4.5kV BGCT
38mm
GCT
Diode
GCT
Gate
at 300K
VF @ 300A (V)
VF @ 500A (V)
A
1.9
2.3
B
1.94
2.4
C
1.62
1.97
D
1.74
2.1
VT@300A (V)
1.34
1.35
1.36
1.36
VT@500A (V)
1.56
1.58
1.58
1.58
Gate
Front-side
Diode
GCT
Diode
at 400K
A
B
C
D
VF @ 300A (V)
VF @ 500A (V)
2.3
3.01
2.3
3.1
1.87
2.4
2.05
2.66
VT@300A (V)
VT@500A (V)
1.38
1.68
1.39
1.7
1.41
1.71
1.39
1.69
GCT
Back-side
Diode
BGCT
RC-GCT
© ABB Group
April 29, 2014 | Slide 42
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29.04.2014
Wide Bandgap Technologies
ABB SiC 4.5kV PIN Diodes for
HVDC (1999)
© ABB Group
April 29, 2014 | Slide 43
Wind Bandgap Semiconductors: Long Term Potentials
§ Higher Blocking
§ Lower Losses
§ Lower Leakage
§ Higher Power at Wider
Frequency Range
§ Very High Voltage
§ Higher Temperature
© ABB Group
April 29, 2014 | Slide 45
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Power Semiconductors Research
New materials
Diamond
© ABB Group
April 29, 2014 | Slide 45
WBG Devices and their challenges
Future Device/System Targets
§
§
§
COST (Target Lower Device & System Costs)
§
WBG: high devices cost and system development is required to compensate
§
Si devices continuously reaching higher Performance/Cost ratios through lower losses & integration
POWER (Target Higher Current & Temperature Capabilities)
§
WBG: area limited due to defects and cost aspects, temperature limits are package and loss related
§
Large area Si device concepts and processes are advanced with high operating temperature designs
LOSSES (Target Lower Losses)
§
§
§
Conduction Losses
§
WBG: Bipolar suffer from high Vo & Unipolar from strong on-state temperature coefficient
§
Si devices are continuously advancing in terms of loss reduction and integration
Switching Losses (Higher Frequency Operation)
§
WBG: system and package designs not developed and related EMI issues for WBG devices
§
Si devices are soft and are also targeting relatively higher frequency operation
SYSTEM TOPOLOGIES (TARGET MODULARITY, LOWER COST & HIGHER POWER)
§
WBG: new approach targeting lower frequencies and hence, lower on-state losses
§
Si devices provide a near ideal and much cheaper solution
© ABB Group
April 29, 2014 | Slide 46
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SiC for power devices has reached a new milestone
§
Due to developments on different fronts:
§
The introduction of 1700V diodes and 1200V MOSFETs
§
Introduction of 6” wafer manufacturing into production
§
Most companies involved in WBG activities from wafer supply to device processing
§
More applications employing WBG technologies in the lower power range
§
§
Low voltage power supplies
§
Power Factor Correction
§
Solar HE converters
§
Low voltage drives
Future special applications
§
Electric traction (Full and Hybrid Cars)
§
High frequency DC-DC conversion (PET)
§
Welding Applications
§
…
6” SiC in Nov
2010
© ABB Group
April 29, 2014 | Slide 47
Optimized Technology Curves for HF Applicationa
§
1700V Ultra Fast IGBTs with SiC Diodes
© ABB Group
April 29, 2014 | Slide 48
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29.04.2014
ABB Invests in Power Semiconductor R&D
New Cleanroom Facility at ABB Corporate Research Switzerland
§
§
New Research Laboratory
§
ABB Corporate Research in close collaboration
with ABB Semiconductor is extending power
device research
§
New facility for Si and WBG Semiconductor device
processing
§
New Packaging cleanroom for module assembly
§
Power Device application and test area
Key Figures:
§ 650m 2
cleanroom area (incl. grey rooms) .
§ 350m 2
electrical and application test laboratory
§
New Power Electronics Research
Laboratory, Baden-Dättwil
Total Investment: 18 MCHF
© ABB Group
April 29, 2014 | Slide 50
Conclusions
§
Si Based Power semiconductors are a key enabler for modern and future
power electronics systems including grid systems
§
High power semiconductors devices and new system topologies are
continuously improving for achieving higher power, improved efficiency
and reliability and better controllability
§
The PCT, IGCT and IGBT continue to evolve for achieving future system
targets with the potential for improved power/performance through further
losses reductions, higher operating temperatures and integration solutions
§
Wide Band Gap Based Power Devices offer many performance advantages
with strong potential for very high voltage applications
© ABB Group
April 29, 2014 | Slide 50
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26