Physics 3100 Electronics, Fall 2009, Lab 10. The n-channel Enhancement Mode MOSFET1
The 2N7000 n-channel enhancement
mode MOSFET transistor: Specifications and applications.
Objectives:
Equipment required:
1. Oscilloscope (Tektronix TDS210, dual channel 60 MHz digital scope)
2. Function Generator (BK Precision 4011A which outputs sine, triangle
square wave (with variable offset) and logic level signals up to a frequency
of 5 MHz.
3. Breadboard kit (PB-503)
4. Digital Multimeter (Fluke 187)
5. Resistors: 2.2kΩ (2), 4.7 kΩ, etc.
6. Capacitors: 1 µ F (2) (pink), 15 µ F (1) (blue)
7. quick-clips (2)
8. BNC-to-banana cable (1)
9. 2N7000 n-channel enhancement mode MOSFET
Exercise 1: The enhancement mode MOSFET threshold voltage
Use the digital multimeter to measure the actual resistance of the drain resistor
RD . Using the prototype board’s 10 kΩ potentiometer, as indicated by the
Physics 3100 Electronics, Fall 2009, Lab 10. The n-channel Enhancement Mode MOSFET2
circuit above, determine the MOSFET’s threshold voltage, VT , by monitoring
the drain voltage, Vo as you vary the gate voltage, VG , using the potentiometer.
I suggest defining the threshold voltage to be that voltage for which the drain
current reaches 0.1 mA. Enter your value in the table of VT values on the white
board at the front of the lab for comparison with the values measured by others
in the lab. Note: See the data sheet attached to this lab outline to
determine which pin is the drain, which is the source and which is
the gate.
Exercise 2: Biasing the MOSFET, the relationship between the dc
drain current ID and the dc gate-source voltage VGS
Using the same circuit as in exercise 1 above, increase the gate voltage so that
it is 0.25 volts above threshold.
1 The parameter K:Measure the drain current by measuring the voltage
drop across the drain resistor RD . The device dependent parameter “K”
is given by
2ID
K=
(VGS − VT )2
Determine the value of K and enter it into the table on the whiteboard
for comparison with the values obtained by others in the lab.
2 Bias circuit: Using the values of VT and K determined above for your
transistor, calculate the value of VGS required for a drain current ID = 2
mA. Use a source resistor RS = 2.2 kΩ find values of RG1 and RG2 required
to produce this gate-source voltage (since there is a sizeable leakage current
with this set-up I recommend using RG1 =20 kΩ).
Physics 3100 Electronics, Fall 2009, Lab 10. The n-channel Enhancement Mode MOSFET3
Exercise 3: Biasing the MOSFET, the relationship between the dc
drain current ID and the dc gate-source voltage VGS
1 Using the measured values of VD , VG , VS and ID calculate the transconductance, gm of your transistor under these bias conditions
gm =
2ID
(VGS − VT )
Enter this value next to the values of VT and K on the whiteboard.
2 Construct the bias circuit below using the available resitor values which
best match your design (i.e., those that give the closest value of VG ).
Measure the gate, drain and source voltages and the drain current.
3 Calculate the gain of the circuit you built for part 2 of exercise 2 and
compare to the gain you measure when you compare the output voltage
obtained using a sinusoidal input voltage of amplitude 0.05 v at 20 kHz.
4 Add the bypass capacitor, C3 as shown below.
Physics 3100 Electronics, Fall 2009, Lab 10. The n-channel Enhancement Mode MOSFET4
Now calculate the expected gain and compare to the measured value.
November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
High density cell design for low RDS(ON).
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
___________________________________________________________________________________________
D
G
D
G
S
TO-92
S
2N7000
(TO-236AB)
2N7002/NDS7002A
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
2N7000
2N7002
NDS7002A
Symbol
Parameter
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
60
V
VGSS
Gate-Source Voltage - Continuous
±20
V
±40
- Non Repetitive (tp < 50µs)
ID
Maximum Drain Current - Continuous
PD
Maximum Power Dissipation
- Pulsed
o
Derated above 25 C
TJ,TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Units
200
115
280
500
800
1500
400
200
300
3.2
1.6
-55 to 150
2.4
-65 to 150
300
mA
mW
mW/°C
°C
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
© 1997 Fairchild Semiconductor Corporation
312.5
625
417
°C/W
2N7000.SAM Rev. A1
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Type
Min
60
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 10 µA
All
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
2N7000
V
TJ=125°C
VDS = 60 V, VGS = 0 V
TJ=125°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
2N7002
NDS7002A
1
µA
1
mA
1
µA
0.5
mA
VGS = 15 V, VDS = 0 V
2N7000
10
nA
VGS = 20 V, VDS = 0 V
2N7002
NDS7002A
100
nA
VGS = -15 V, VDS = 0 V
2N7000
-10
nA
VGS = -20 V, VDS = 0 V
2N7002
NDS7002A
-100
nA
V
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
RDS(ON)
2N7000
0.8
2.1
3
2N7002
NDS7002A
1
2.1
2.5
1.2
5
1.9
9
1.8
5.3
1.2
7.5
1.7
13.5
2N7000
Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA
TJ =125°C
VGS = 4.5 V, ID = 75 mA
2N7002
VGS = 10 V, ID = 500 mA
TJ =100°C
VGS = 5.0 V, ID = 50 mA
TJ =100C
VGS = 10 V, ID = 500 mA
NDS7002A
TJ =125°C
VGS = 5.0 V, ID = 50 mA
TJ =125°C
VDS(ON)
Drain-Source On-Voltage
VGS = 10 V, ID = 500 mA
2N7000
VGS = 4.5 V, ID = 75 mA
VGS = 10 V, ID = 500mA
2N7002
VGS = 5.0 V, ID = 50 mA
VGS = 10 V, ID = 500mA
VGS = 5.0 V, ID = 50 mA
NDS7002A
1.7
7.5
2.4
13.5
1.2
2
2
3.5
1.7
3
2.8
5
0.6
2.5
0.14
0.4
0.6
3.75
0.09
1.5
0.6
1
0.09
0.15
Ω
V
2N7000.SAM Rev. A1
Electrical Characteristics T
Symbol
A
= 25oC unless otherwise noted
Parameter
Conditions
Type
Min
Typ
Max
Units
ON CHARACTERISTICS Continued (Note 1)
ID(ON)
gFS
On-State Drain Current
Forward Transconductance
VGS = 4.5 V, VDS = 10 V
2N7000
75
600
VGS = 10 V, VDS > 2 VDS(on)
2N7002
500
2700
VGS = 10 V, VDS > 2 VDS(on)
NDS7002A
500
2700
VDS = 10 V, ID = 200 mA
2N7000
100
320
VDS > 2 VDS(on), ID = 200 mA
2N7002
80
320
VDS > 2 VDS(on), ID = 200 mA
NDS7002A
80
320
mA
mS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn-On Time
toff
Turn-Off Time
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
All
20
50
pF
All
11
25
pF
All
4
5
pF
ns
VDD = 15 V, RL = 25 Ω,
ID = 500 mA, VGS = 10 V,
RGEN = 25
2N7000
10
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
RGEN = 25 Ω
2N700
NDS7002A
20
VDD = 15 V, RL = 25 Ω,
ID = 500 mA, VGS = 10 V,
RGEN = 25
2N7000
10
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
RGEN = 25 Ω
2N700
NDS7002A
20
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
ISM
VSD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
2N7002
115
NDS7002A
280
2N7002
0.8
NDS7002A
1.5
VGS = 0 V, IS = 115 mA (Note 1)
2N7002
0.88
1.5
VGS = 0 V, IS = 400 mA (Note 1)
NDS7002A
0.88
1.2
mA
A
V
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
Typical Electrical Characteristics
2N7000 / 2N7002 / NDS7002A
2
3
V GS =4.0V
8.0
RDS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
9.0
7.0
1 .5
6.0
1
5.0
0 .5
4.0
I
D
, DRAIN-SOURCE CURRENT (A)
VGS = 10V
3.0
0
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
5 .0
6 .0
2
7 .0
8 .0
1 .5
9 .0
10
1
0 .5
5
0
0 .8
1 .2
I D , DRA IN CURRENT (A)
1 .6
2
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
3
V GS = 10V
I D = 500m A
R DS(on) , NORMALIZED
1.75
1.5
1.25
1
0.75
0.5
-5 0
-2 5
0
25
50
75
100
TJ , JUNCTION T EMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0 .4
Figure 1. On-Region Characteristics
V GS = 10V
2 .5
TJ = 1 2 5 ° C
2
1 .5
25°C
1
-55°C
0 .5
0
150
0
Figure 3. On-Resistance Variation
with Temperature
0 .4
0 .8
1 .2
I D , DRAIN CURRENT (A)
1 .6
2
Figure 4. On-Resistance Variation with Drain
Current and Temperature
2
T J = -55°C
25°C
125°C
1.6
1.2
0.8
0.4
0
0
2
V
GS
4
6
8
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
Vth , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
1 .1
VDS = 10V
ID , DRAIN CURRENT (A)
4 .5
2 .5
V DS = VGS
1 .0 5
I D = 1 mA
1
0 .9 5
0 .9
0 .8 5
0 .8
-50
-25
0
25
50
75
100
TJ , JUNCTION TEM PERATURE (°C)
125
150
Figure 6. Gate Threshold Variation with
Temperature
2N7000.SAM Rev. A1
Typical Electrical Characteristics (continued)
2N7000 / 2N7002 /NDS7002A
2
I D = 250µA
1.05
1.025
1
0.975
0.95
0.925
-50
-25
V GS = 0V
1
1.075
IS , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
0
25
50
75
100
TJ , JUNCTION TEM PERATURE (°C)
125
0 .5
TJ = 1 2 5 ° C
0 .1
25°C
0 .0 5
-5 5 ° C
0 .0 1
0 .0 0 5
0 .0 0 1
0 .2
150
0 .6
0 .8
1
1 .2
, BODY DIODE FORW A RD VOLTAGE (V)
1 .4
Figure 8. Body Diode Forward Voltage Variation with
Figure 7. Breakdown Voltage Variation
with Temperature
10
60
V DS = 2 5 V
VGS , GATE-SOURCE VOLTAGE (V)
40
C iss
20
CAPACITANCE (pF)
0 .4
V SD
C oss
10
5
C rss
f = 1 MHz
2
V GS = 0V
8
6
ID = 5 0 0 m A
4
2
280m A
115m A
1
0
1
2
3
V DS
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
50
Figure 9. Capacitance Characteristics
0
0 .4
0 .8
1 .2
Q g , GATE CHARGE (nC)
t d(on)
VGS
R GEN
tr
RL
t d(off)
tf
90%
90%
V OUT
Output, Vout
10%
10%
90%
DUT
G
Input, Vin
S
Figure 11.
t off
t on
D
2
Figure 10. Gate Charge Characteristics
VDD
V IN
1 .6
Inverted
50%
50%
10%
Pulse Width
Figure 12. Switching Waveforms
2N7000.SAM Rev. A1
3
2
3
2
1
1
0.5
S(
RD
Lim
)
ON
10
it
1m
10
ms
10
0m
s
1s
0.1
0.05
V GS = 10V
s
s
10
s
DC
SINGLE PULSE
T A = 25°C
0.01
0u
ID , DRAIN CURRENT (A)
I D , DRAIN CURRENT (A)
Typical Electrical Characteristics (continued)
10
0.5
RD
1m
10
0.1
10
0.05
0.01
0m
0u
s
s
ms
s
1s
10
s
DC
VGS = 10V
SINGLE PULSE
T A = 25°C
0.005
0.005
1
2
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
60
80
1
Figure 13. 2N7000 Maximum
Safe Operating Area
3
2
1
I D , DRAIN CURRENT (A)
S(O
Lim
N)
it
RD
S(O
N)
Lim
10
1m
0.5
0.1
10
0.05
V GS = 10V
60
80
0u
s
s
ms
s
1s
10
s
DC
SINGLE PULSE
T A = 25°C
0.01
0m
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 14. 2N7002 Maximum
Safe Operating Area
it
10
2
0.005
1
2
5
10
20
30
V DS , DRAIN-SOURCE VOLTAGE (V)
60
80
Figure 15. NDS7000A Maximum
Safe Operating Area
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
D = 0.5
0.5
R θJA (t) = r(t) * R θJA
R θJA = (See Datasheet)
0 .2
0.2
0.1
0.1
P(pk)
0.05
t1
0.05
0 .02
Single Pulse
0.02
0.01
0.0001
0.001
t2
TJ - T A = P * RθJA (t)
Duty Cycle, D = t1 /t2
0.01
0.01
0.1
t 1, TIME (sec)
1
10
100
300
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0 .2
0.1
0.05
R θJA (t) = r(t) * R θJA
R θJA = (See Datasheet)
0.1
0 .0 5
0 .0 2
P(pk)
0 .0 1
t1
0.01
t2
Single Pulse
TJ - T A = P * RθJA (t)
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
t1 , TIME (sec)
1
10
100
300
Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve
2N7000.SAM Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G