Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Fast-switching N-channel insulated
gate bipolar power transistor in a
plastic envelope.
The device is intended for use in
motor control, DC/DC and AC/DC
converters, and in general purpose
high frequency switching
applications.
PINNING - TO220AB
PIN
gate
2
collector
3
emitter
tab
SYMBOL
PARAMETER
VCE
IC
Ptot
VCEsat
Eoff
Collector-emitter voltage
Collector current (DC)
Total power dissipation
Collector-emitter on-state voltage
Turn-off energy Loss
PIN CONFIGURATION
DESCRIPTION
1
BUK856-800A
MAX.
UNIT
800
24
125
3.5
1.0
V
A
W
V
mJ
SYMBOL
c
tab
g
collector
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCE
VCGR
±VGE
IC
IC
ICLM
Collector-emitter voltage
Collector-gate voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
Collector Current (Clamped
Inductive Load)
Collector current (pulsed peak value,
on-state)
Total power dissipation
Storage temperature
Junction Temperature
ICM
Ptot
Tstg
Tj
MIN.
MAX.
UNIT
RGE = 20 kΩ
Tmb = 25 ˚C
Tmb = 100 ˚C
Tj ≤ Tjmax.
VCL ≤ 500 V
Tj ≤ Tjmax.
-5
-
800
800
30
24
12
40
V
V
V
A
A
A
-
50
A
Tmb = 25 ˚C
-
- 55
-
125
150
150
W
˚C
˚C
CONDITIONS
TYP.
MAX.
UNIT
-
1.0
K/W
60
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Junction to mounting base
Rth j-a
Junction to ambient
March 1993
In free air
1
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CES
Collector-emitter breakdown
voltage
Gate threshold voltage
Zero gate voltage collector
current
Zero gate voltage collector
current
Reverse collector current
Gate emitter leakage current
Collector-emitter saturation
voltage
VGE = 0 V; IC = 0.25 mA
800
-
-
V
VCE = VGE; IC = 1 mA
VCE = 800 V; VGE = 0 V; Tj = 25 ˚C
3
-
4
10
5.5
200
V
µA
VCE = 800 V; VGE = 0 V; Tj =125 ˚C
-
0.2
1
mA
VCE = -5 V; VGE = 0 V
VGE = ±30 V; VCE = 0 V
VGE = 15 V; IC = 12 A
VGE = 15 V; IC = 24 A
-
0.1
10
2.4
3.1
5
100
3.5
-
mA
nA
V
V
MIN.
TYP.
MAX.
UNIT
VGE(TO)
ICES
ICES
IECS
IGES
VCEsat
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfe
Forward transconductance
VCE = 15 V; IC = 6 A
3
7
-
S
Cies
Coes
Cres
Input capacitance
Output capacitance
Feedback capacitance
VGE = 0 V; VCE = 25 V; f = 1 MHz
-
900
85
30
1250
120
50
pF
pF
pF
td on
tr
Eon
Turn-on delay time
Turn-on rise time
Turn-on Energy Loss
IC = 12 A; VCC = 500 V;
VGE = 15 V; RG = 25Ω;
Tj = 25˚C;
-
25
45
0.6
-
ns
ns
mJ
td off
tf
Eoff
Turn-off delay time
Turn-off fall time
Turn-off Energy Loss
Inductive Load
Energy Losses include all ’tail’
losses
-
230
200
0.5
350
400
1
ns
ns
mJ
td on
tr
Eon
Turn-on delay time
Turn-on rise time
Turn-on Energy Loss
IC = 12 A; VCC = 500 V;
VGE = 15 V; RG = 25Ω;
Tj = 125˚C;
-
25
45
0.6
-
ns
ns
mJ
td off
tf
Eoff
Turn-off delay time
Turn-off fall time
Turn-off Energy Loss
Inductive Load
Energy Losses include all ’tail’
losses
-
300
400
1
450
800
2
ns
ns
mJ
March 1993
2
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
1E+01
BUK856-800A
Zth j-mb / (K/W)
50
D=
IC / A
BUK8Y6-800A
20
15
10
40
1E+00
9
0.5
30
0.2
0.1
0.05
1E-01
8
20
0.02
PD
1E-02
0
tp
D=
1E-05
1E-03
t/s
10
VGE / V = 6
t
T
1E-03
1E-07
7
tp
T
0
1E-01
1E+01
Fig.1. Transient thermal impedance
Z th j-mb = f(t) ; parameter D = tp/T
120
15
10
VCE / V
20
Fig.4. Typical output characteristics, Tj=25 ˚C.
IC=f(VCE); parameter VGE
Normalised Power Derating
PD%
5
0
50
IC / A
BUK8Y6-800A
110
VGE / V =
100
15
10
40
90
80
70
30
60
50
20
40
30
10
20
10
0
0
0
20
40
60
80
100
Tmb / C
120
140
0
IC / A
6
Fig.5. Typical on-state characteristics
IC=f(VCE); parameters Tj,VGE
Fig.2. Normalised power dissipation.
PD% = 100.PD/PD 25˚C = f(Tmb)
100
1
Tj / C = 25
150
3
5
2
4
VCEsat / V
BUK8y6-800
50
ICLM
IC / A
Tj / C = 25
150
BUK8Y6-800A
40
10
30
20
1
10
0.1
0
200
400
600
VCE / V
800
0
1000
0
Fig.3. Turn-off Safe Operating Area
conditions: Tj ≤ Tjmax. ; RG = 50 Ω
March 1993
2
4
6
VGE / V
8
10
12
Fig.6. Typical transfer characteristics
IC=f(VGE) ; conditions: VCE=15 V; parameter Tj
3
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
gfe / S
15
BUK8Y6-800A
BUK856-800A
C / pF
10000
10
1000
5
100
BUK8Y6-800A
Cies
Coes
Cres
0
10
0
30
20
10
50
40
0
20
10
IC / A
Fig.7. Typical transconductance, Tj = 25 ˚C.
gfe = f(IC); conditions: VCE = 15 V
16
VGE / V
40
30
VDS / V
Fig.10. Typical capacitances, Cies, Coes, Cres.
C = f(VCE); conditions: VGE = 0 V; f = 1MHz.
BUK8Y6-800A
15
dVCE/dt (V/ns)
BUK8Y6-800A
14
12
10
10
8
6
5
4
2
0
10
0
20
30
QG / nC
0
50
40
t / ns
1000
100
Rg / Ohm
Fig.11. Typical turn-off dVCE/dt vs. RG
conditions: IC = 12 A; VCL = 500 V; Tj = 125 ˚C
Fig.8. Typical turn-on gate-charge characteristics.
VGE = f(QG); conditions: IC = 12 A; parameter VCE
600
10
1
60
BUK8Y6-800A
1.5
E / mJ
BUK8Y6-800A
500
1
400
300
td(off)
tf
200
E(on)
E(off)
0.5
100
0
0
0
20
40
60
80
Tj / C
100
120
0
140
40
60
80
Tj / C
100
120
140
Fig.12. Typical Switching losses vs. Tj
conditions: IC = 12 A; VCL = 500 V; RG = 25 Ω
Fig.9. Typical Switching Times vs. Tj
conditions: IC = 12 A; VCL = 500 V; RG = 25 Ω
March 1993
20
4
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
10000
BUK856-800A
BUK8Y6-800A
t / ns
4
td(off)
E(off) / mJ
BUK8Y6-800A
3
1000
tf
2
100
1
0
10
1
10
100
1000
10
1
Rg / Ohm
Fig.13. Typical Switching Times vs. RG
conditions: IC = 12 A; VCL = 500 V; Tj = 125 ˚C
500
1000
100
Rg / Ohm
t / ns
Fig.16. Typical Energy loss at turn-off vs. RG
conditions: IC = 12 A; VCL = 500 V; Tj = 125 ˚C
4
BUK8Y6-800A
tf
400
BUK8Y6-800A
E(off) / mJ
VCL / V = 500
3
400
td(off)
300
2
300
200
1
100
0
0
10
0
20
30
IC / A
0
20
IC / A
10
40
30
Fig.17. Typical Energy loss at turn-off vs. IC
conditions: VCL = 500 V; RG = 25 Ω; Tj = 125˚C;
parameter VCL
Fig.14. Typical Switching Times vs. IC
conditions: VCL = 500 V; RG = 25 Ω; Tj = 125˚C
I
VCC = VCL
IC
90%
tr
Lc
t p : adjust for correct Ic
tf
10%
V
D.U.T.
td(on)
VGE
td(off)
t
VCE
90%
RG
tc
VGE
10%
IC measure
0V
t
0R1
Fig.15. Test circuit for inductive load switching times.
March 1993
Fig.18. Inductive Load Switching Times definitions.
5
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.19. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
March 1993
6
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1993
7
Rev 1.000