Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel insulated gate bipolar
power transistor in a plastic
envelope.
The device is intended for use in
automotive ignition applications,
and other general purpose
switching applications requiring low
on-state voltage.
PINNING - TO220AB
PIN
gate
2
collector
3
emitter
tab
SYMBOL
PARAMETER
VCE
VEC
IC
Ptot
VCEsat
Collector-emitter voltage
Reverse Collector-Emitter Voltage
Collector current (DC)
Total power dissipation
Collector-emitter on-state voltage
PIN CONFIGURATION
DESCRIPTION
1
BUK854-500 IS
MAX.
UNIT
500
25
15
85
2
V
V
A
W
V
SYMBOL
c
tab
g
collector
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCE
VCGR
±VGE
IC
IC
ICM
Collector-emitter voltage
Collector-gate voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
Collector current (pulsed peak value,
on-state)
Collector current (clamped inductive
load)
Reverse Avalanche Energy
(repetitive)
Total power dissipation
Storage temperature
Junction Temperature
ICLM
EECR
Ptot
Tstg
Tj
MIN.
MAX.
UNIT
RGE = 20 kΩ
Tmb = 25 ˚C
Tmb = 100 ˚C
-
-25
-
500
500
30
15
8.5
25
V
V
V
A
A
A
VCL = 350 V
RG ≥ 1 kΩ
IE = 2 A
-
25
A
-
5
mJ
Tmb = 25 ˚C
-
- 55
-
85
150
150
W
˚C
˚C
TYP.
MAX.
UNIT
60
1.47
-
K/W
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
In free air
March 1993
1
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK854-500 IS
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CES
Collector-emitter breakdown
voltage
Reverse Collector-Emitter
breakdown voltage
Gate threshold voltage
Zero gate voltage collector
current
Zero gate voltage collector
current
Reverse collector current
Reverse collector current
Gate emitter leakage current
Collector-emitter saturation
voltage
VGE = 0 V; IC = 0.25 mA
500
-
-
V
IE = 10 mA
25
30
-
V
VCE = VGE; IC = 1 mA
VCE = 500 V; VGE = 0 V; Tj = 25 ˚C
2.5
-
4
1
5.5
20
V
µA
VCE = 500 V; VGE = 0 V; Tj = 125 ˚C
-
0.1
1
mA
VCE = -25 V
VCE = -25 V; Tj = 125˚C
VGE = ±30 V; VCE = 0 V
VGE = 15 V; IC = 8.5 A
VGE = 15 V; IC = 15 A
VGE = 15 V; IC = 8.5 A; Tj = 100˚C
VGE = 15 V; IC = 8.5 A; Tj = -40˚C
-
0.5
5
10
1.4
1.7
1.5
1.4
10
100
2
2
1.9
mA
mA
nA
V
V
V
V
MIN.
TYP.
MAX.
UNIT
1.5
4.5
-
S
V(BR)EC
VGE(TO)
ICES
ICES
IEC
IEC
IGES
VCEsat
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfe
Forward transconductance
VCE = 15 V; IC = 3 A
Cies
Coes
Cres
Input capacitance
Output capacitance
Feedback capacitance
VGE = 0 V; VCE = 25 V; f = 1 MHz
-
400
40
15
750
80
40
pF
pF
pF
td off
tf
tc
Eoff
Turn-off delay time
Fall time
Crossover Time
Turn-off Energy loss
IC = 8.5 A; VCL = 350 V; RG = 1 kΩ;
VGE = 15 V; Tj = 100˚C; Inductive
Load
-
3.5
4
5.5
6.5
4.5
6
7.5
9
µs
µs
µs
mJ
1E+01
Zth j-mb / (K/W)
120
Normalised Power Derating
PD%
110
100
D=
1E+00
90
0.5
80
0.2
0.1
0.05
1E-01
70
60
50
0.02
40
1E-02
PD
0
1E-03
1E-07
tp
D=
T
1E-05
1E-03
t/s
tp
T
30
20
10
t
1E-01
0
1E+01
0
Fig.1. Transient thermal impedance
Z th j-mb = f(t) ; parameter D = tp/T
March 1993
20
40
60
80
100
Tmb / C
120
140
Fig.2. Normalised power dissipation.
PD% = 100.PD/PD 25˚C = f(Tmb)
2
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
IC / A
100
BUK8Y4-500IS
BUK854-500 IS
ICLM / A
30
BUK8Y4-500IS
ICLM
20
1
10
RG = 1 kOhm
10
0
0.1
0
200
400
600
0
200
400
600
dVCE/dt (V/us)
VCE / V
Fig.6. Derating of ICLM with turn-off dVCE/dt
conditions: VCL ≤ 350 V; Tj ≤ Tjmax.
Fig.3. Turn-off Safe Operating Area
conditions: Tj ≤ Tjmax. ; RG = ≥ 1 kΩ
24
IC / A
15
10
BUK854-500IS
8.5
9
IC / A
8
20
7.5
16
16
7
12
12
6.5
8
BUK854-500IS
150
Tj / C = 25
-40
24
VGE / V =
20
800
8
6
4
4
5.5
5
0
0
0
2
4
6
VCE / V
8
10
12
0
VCEsat / V
4
6
8
10
VGE / V
Fig.4. Typical Output Characteristics
IC = f(VCE); parameter VGE; conditions: Tj = 25˚C
5
4
2
Fig.7. Typical Transfer Characteristics
IC = f(VGE), parameter Tj; conditions: VCE = 15 V
BUK854-500IS
8
150
Tj / C = 25
-40
gfe / S
BUK854-500IS
7
3
6
2
5
4
3
1
2
1
0.5
0
0.1
1
IC / A
0
10
Fig.5. Typical On-state Voltage
VCEsat = f(IC); parameter Tj; conditions: VGE = 15 V
March 1993
4
8
12
16
IC / A
20
24
Fig.8. Typical Forward Transconductance
gfe = f(IC); conditions: VCE = 15 V; Tj = 25˚C
3
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
VGE(TO) / V
6
IGBT-Std
BUK854-500 IS
15
t / us, E / mJ
BUK854-500IS
td(off)
max
5
E(off)
10
typ.
4
tc
3
min
5
2
tf
1
0
0
-60 -40 -20
0
20 40 60 80 100 120 140
Tj / C
Fig.12. Typical Switching Characteristics vs. RG
conditions: Tj = 100 ˚C; IC = 8.5 A; VCL = 350 V
BUK854-500IS
VGE / V
10000
1000
Rg / Ohm
Fig.9. Gate Threshold Voltage
VGE(TO) = f(Tj); conditions: IC = 1 mA; VCE = VGE
15
100
10
8
t / us, E / mJ
BUK8Y4-500IS
E(off)
7
tc
10
6
5
5
tf
4
tdoff
3
0
2
0
4
8
12
16
QG / nC
20
24
0
28
Fig.10. Typical Turn-on Gate Charge Characteristics
VGE = f(QG); conditions: IC = 8.5 A; VCE = 350 V
dVCE/dt (V/us)
900
15
Recommended RG
700
600
500
40
60
80
Tj / C
100
120
140
Fig.13. Typical Switching Characteristics vs. Tj
conditions: IC = 8.5 A; VCL = 350 V; RG = 1 kΩ
BUK8Y4-500IS
800
20
t/ us, E / mJ
BUK8Y4-500IS
E(off)
10
400
tc
300
5
tf
200
td(off)
100
0
0
10
100
1000
10000
RG / Ohm
Fig.11. Typical Turn-off dVCE/dt vs. RG
conditions: Tj = 100 ˚C; IC = 8.5 A; VCL = 350 V
March 1993
0
4
8
12
16
IC / A
20
24
Fig.14. Typical Switching Characteristics vs. IC
conditions: Tj = 100 ˚C VCL = 350 V; RG = 1 kΩ
4
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
1000
C / pF
BUK854-500 IS
BUK854-500IS
Vcc
Cies
Lc
t p : adjust for correct Ic
V CL
100
D.U.T.
Coes
RG
VGE
10
Cres
10
0
30
20
IC measure
0V
40
VCE / V
0R1
Fig.17. Test circuit for inductive load switching times.
Fig.15. Typical Capacitances Cies, Coes, Cres
C = f(VCE); conditions: VGE = 0 V; f = 1 MHz
V(BR)ECS / V
34
BUK854-500IS
IC
90%
tf
32
td(off)
typ.
30
10%
t
28
min.
VCE
VGE
90%
tc
26
24
-60 -40 -20
0
10%
20 40 60 80 100 120 140
Tj / C
t
Fig.18. Definitions of inductive load switching times
Fig.16. Reverse Breakdown Voltage
V(BR)ECS = f(Tj); conditions: IEC = 50 mA
March 1993
5
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK854-500 IS
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.19. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
March 1993
6
Rev 1.000
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK854-500 IS
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1993
7
Rev 1.000