CHE1270a98F
5 - 44GHz Detector
GaAs Monolithic Microwave IC
Description
The CHE1270a98F is a detector that
integrates a matched detection diode (Vdet).
A reference diode is also available to be
used in differential mode (Vref).
It is designed for a wide range of applications
where an accurate transmitted power control
is
required,
typically
commercial
communication systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is available in chip form.
RF IN
Matching
Vdet
Vref
DC
Transmitted power detection (mV)
Main Features
10000
■ Wide frequency range 5-44GHz
■ 30dB dynamic range
■ ESD protected
■ BCB layer protection
■ Chip size: 1.41 x 0.89 x 0.1mm
Vdetect= Vref-Vdet (mV)
1000
10GHz
11GHz
12GHz
17GHz
22GHz
27GHz
32GHz
37GHz
40GHz
42GHz
44GHz
100
10
1
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
10 12 14 16
Input power (dBm)
Main Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
Dr
Dynamic range
RL
Return Loss
Ref. : DSCH1270a6174 - 22 Jun 16
Min
5
30
Typ
Max
44
-10
1/8
Unit
GHz
dB
dB
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHE1270a98F
5 - 44GHz Detector
Main Characteristics
Tamb.= +25°C, Vdc = +4.5V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
5
44
GHz
Dr
Dynamic range (for Input Power detection)
30
dB
IPd
Input Power detection
-15
15
dBm
Voltage detection Vref – Vdet
Vdetect
5
2200
mV
from IPd_min to IPd_max
Return Loss (5 – 10GHz)
-4
-3
dB
Return Loss (10 – 12GHz)
-7
-5
dB
Return Loss (12 – 14.5GHz)
-8
-6
dB
RL
Return Loss (14.5 – 42GHz)
-10
-8
dB
Return Loss (42 – 44GHz)
-7
-5
dB
Vdc
Bias voltage
4.5
V
Idc
Bias current
50
70
90
µA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports but with 27kΩ resistor in parallel on pads Vdet and Vref.
Ref. : DSCH1270a6174 - 22 Jun 16
2/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHE1270a98F
5 - 44GHz Detector
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vdc
Drain bias voltage
6V
V
IPdmax Maximum Input Power detection
+18
dBm
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : DSCH1270a6174 - 22 Jun 16
3/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHE1270a98F
5 - 44GHz Detector
Typical on wafer Measurements
Tamb.= +25°C, Vdc = +4.5V
Return
frequency
ReturnLoss
Lossversus
versus frequency
0
-2
-4
Return Loss (dB)
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44
Freq (GHz)
Transmitted power
Transmitted
powerdetection
detection (mV)
Vdetect= Vref-Vdet (mV)
10000
12 GHz
17GHz
22GHz
27GHz
32GHz
37GHz
40GHz
42GHz
44GHz
1000
100
10
1
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
Input power (dBm)
Ref. : DSCH1270a6174 - 22 Jun 16
4/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHE1270a98F
5 - 44GHz Detector
Typical on wafer Measurements
Tamb.= +25°C, Vdc = +4.5V
40
Transmitted
power detection
versusversus
frequency
@ -15dBm
input
power
Transmitted
power detection
frequency
@ -15dBm
Input
power
Vdetect= Vref-Vdet (mV)
35
30
25
20
15
10
5
0
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
Freq (GHz)
Transmitted
power detection
versus
frequency
@ +15dBm
Transmitted
power detection
versus
frequency
@ +15dBminput
Inputpower
power
2000
1900
Vdetect= Vref-Vdet (mV)
1800
1700
1600
1500
1400
1300
1200
1100
1000
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
Freq (GHz)
Ref. : DSCH1270a6174 - 22 Jun 16
5/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHE1270a98F
5 - 44GHz Detector
Mechanical data
Chip thickness: 100µm
Chip size: 1.41 x 0.89 x 0.1mm ±35µm
DC Pads Size: 100/100 µm
All dimensions are in micrometers
Note: Supply feed might be capacitively bypassed. 25µm diameter gold wire is to be
preferred.
Ref. : DSCH1270a6174 - 22 Jun 16
6/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHE1270a98F
5 - 44GHz Detector
Notes
RF IN
Matching
Vdet
Vref
27k
27k
DC
Recommended external resistors assembly
27kΩ resistors in parallel with Vdet and Vref pads are recommended to provide the best
behaviour in the whole operating temperature range.
As the voltage detection is the difference between Vref and Vdet, the external resistor value
should be identical on these two ports.
For information, a variation of 3% leads around 1mV variation of detected voltage.
Due to ESD protection circuits on RF input, an external capacitance might be requested to
isolate the product from external voltage that could be present on the RF access.
ESD protections are also implemented on Vdet and Vref accesses.
Due to the BCB coating on the chip, qualification domain implies the chip must be glued.
Ref. : DSCH1270a6174 - 22 Jun 16
7/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
CHE1270a98F
5 - 44GHz Detector
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Ordering Information
Chip form:
CHE1270a98F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCH1270a6174 - 22 Jun 16
8/8
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com