Power Stage Asymmetric DuAL MOSFETs
Integrated Solution Offers Higher Current Output in Less Board Space
As requirements expand to provide more functionality in end systems, power engineers are being challenged with
providing higher current output in less board space. The Power Stage family incorporates a high-side and low-side
MOSFET, as well as a monolithic Schottky body diode in a single PQFN package. By integrating these devices
into one module, the Power Stage family reduces board area by more than 50 percent over discrete solutions for
applications up to 30 A.
Features
Applications
•Low side RDS(ON) to below 2 mΩ
•Lowest package resistance
•Integrated high-side and low-side MOSFETs
with a Schottky body diode
•No external snubbers or gate resistors needed
•Ultra-low source inductance on SyncFET™
•Better Figure of Merit (FOM) than wire packaging
•Highest power density for DC-DC applications
•Reduces board space: replaces two or three 5 mm x 6 mm components
•Conventional pinout and footprint
•Improved thermal impedance
•DC-DC synchronous buck conversion
•Servers, desktops and notebooks
•Telecommunications, routing and switching
Reduces Board Area Over Discrete Solutions
Power Stage
D1
G1
Q1 Control FET
L
IOUT
S1
Controller
+ Driver
D2
PHASE
Q2 Synchronous FET
G2
S2
+
COUT
VOUT
–
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Power Stage Portfolio
Product Number
FDMS3660S
FDMS3664S
FDMS3668S
FDMS3669S
FDMS7602S
FDMS7608S
FDMS7620S
FDMC7208S
FDMC7200S
High Side/
Low Side
VDS
VGS
RDS(ON) (Max)
@10V
RDS(ON) (Max)
@4.5V
HS
30
20
8.0
11.0
LS
30
12
1.8
2.2
HS
30
20
8.0
11.0
LS
30
12
2.6
3.2
HS
30
20
8.0
11.0
LS
30
12
5.0
5.2
HS
30
20
10.0
14.5
LS
30
12
5.0
5.2
HS
30
20
7.5
12.0
LS
30
20
5.0
6.8
HS
30
20
10.0
13.6
LS
30
20
6.3
7.3
HS
30
20
16.6
30.0
LS
30
12
11.2
14.5
HS
30
20
9.0
11.0
LS
30
12
6.4
7.5
HS
30
20
20.0
32.0
LS
30
20
10.0
13.5
Application
(A)
Package
25
PQFN56_DCL
20
PQFN56_DCL
16
PQFN56_DCL
15
PQFN56_DCL
15
MLP56 Dual
13
MLP56 Dual
10
MLP56 Dual
10
MLP33 Dual
6
MLP33 Dual
Highest Power Density Dual MOSFET
Fairchild offers Power Clip Asymmetric Dual MOSFETs in a PQFN
3.3 mm x 3.3 mm package with highest power density for high
performance in a small form factor. These devices deliver up to 25 A
of output current with flipped low-side MOSFET for optimized thermal
performance. All clip packages significantly reduce parasitics,
reducing power loss and increasing efficiency.
Power Clip 3.3 mm x 3.3 mm
Qg Typ. (nC)
@ VGS = 4.5VGS
RDS(ON) Max (mΩ) 4.5V VGS
COSS Typ.
(pF)
Part Number
Measurement
(mm2)
BVDSS
(V)
High Side
Low Side
High Side
Low Side
Low Side
FDPC8011S
3.3 x 3.3
25
7.8
2.2
9
30
1126
FDPC8013S
3.3 x 3.3
30
9.6
2.7
6
21
997
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