CM2500DY-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual Half-Bridge
IGBT HVIGBT
Series Module
2500 Amperes/1200 Volts
A
AN
F
AP
AQ
J (18 PLACES)
E2
G2
E2
C1
C1
G
C2
F
S L
C2E1
V C B
D
C2E1
K
G1
E1
AG
AF
AF
AH
F
AV
FW
AB
AU
AD
AC
(SCREWING
DEPTH)
U
R
F
N
M (8 PLACES)
AF
T
C1
P
AF
K
Q
K
AT
AA
L
L
E F
X
Y
P
L
E2
AS
H (12 PLACES)
AR
AC
AJ
AM
AK
AL
AF
AF
AW
Z
(SCREWING
DEPTH)
F
AE
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3
±0.2
over
3 to 6
±0.3
over
6 to 30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to ±0.4
G2
E2 (Es2)
C2 (Cs2)
Tr2
E2
E2
C1
C1
C2E1
Di2
Di1
C2E1
Tr1
G1
E1 (Es1)
C1 (Cs1)
TH1
NTC
TH2
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
12.2
5.6
4.96
1.89
1.85
0.28
2.28
0.21±0.004 Dia.
M6 Metric
1.65
0.91
M4 Metric
0.35
0.47
0.21
0.33
4.92
0.6
0.83
1.5
2.04
1.85+0.04/-0.02
1.55
310.0
142.5
126.0
48.0
46.9
7.0
58.0
5.5±0.1 Dia.
M6
42.0
23.0
M4
9.0
11.9
5.4
8.5
125.0
15.0
21.0
38.0
51.9
47.1+1.0/-0.5
39.4
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
0.63
0.24
0.16
0.45
2.01+0.04/-0.02
0.32
0.55
2.05
0.59
7.01
3.98
1.63
1.54
11.42
9.13
6.85
4.56
0.39
0.03
0.02
0.16
16.0
6.2
4.0
11.5
51.0+1.0/-0.5
8.2
14.0
52.0
15.0
178.0
101.0
41.5
39.0
290.0
232.0
174.0
116.0
10.0
8.0
5.0
4.0
AW
1.425+0.04/-0.02
36.2+1.0/-0.5
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
£ NTC Thermistor
Applications:
£ AC Motor Control
£ Motion/Servo Control
£Photovoltaic/Wind
£ UPS Inverter
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM2500DY-24S is a 1200V
(VCES), 2500 Ampere Dual
Half-Bridge IGBT HVIGBT
Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM2500 24
5/14 Rev. 3
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM2500DY-24S
Dual Half-Bridge IGBT HVIGBT Module
2500 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
SymbolRating Units
Collector-Emitter Voltage (VGE = 0V)
VCES1200 Volts
Gate-Emitter Voltage (VCE = 0V)
VGES±20 Volts
Collector Current (DC, TC = 84°C)*2,*4IC
Collector Current (Pulse,
2500Amperes
Repetitive)*3I
CRM 5000Amperes
Total Maximum Power Dissipation (TC = 25°C)*2,*4Ptot 11535Watts
Emitter Current (DC)*2 IE*1
Emitter Current (Pulse, Repetitive)*3 2500Amperes
IERM*1 5000Amperes
Module
Characteristics
SymbolRating Units
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
VISO4000 V
Tj(max)175
°C
Maximum Case Temperature*4TC(max)125
°C
Tr2
Di2
Di1
Tr1
Tr2
Tr2
Di2
Di1
Tr1
Tr2
Di1
Di2
Tr1
Tr2
Di2
Tr1
Tr2
Di1
Di2
Di1
Tr1
Tr2
Di2
Tr1
Tr2
Di1
Di2
Di1
Tr1
Tr2
Di2
Tr1
101.2
96.2
87.7
82.7
Di1
54.2
Tr1
40.7
Di1
Tr2
Di1
Di2
0
198.0
226.2
256.0
284.2
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
24.0
°C
52.2
°C
-40 ~ 125
82.0
-40 ~ 150
Tstg
110.2
Tj(opr)
Storage Temperature
140.0
Operating Junction Temperature, Continuous Operation (Under Switching)
168.2
Maximum Junction Temperature, Instantaneous Event (Overload)
Tr1
Di2
59.2
45.7
24.5
Th
0
25.7
54.0
46.5
83.7
112.0
141.7
170.0
199.7
228.0
257.7
286.0
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr1 / Tr2: IGBT
2
Di1 / Di2: FWDi
Th: NTC Thermistor
5/14 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM2500DY-24S
Dual Half-Bridge IGBT HVIGBT Module
2500 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Cutoff Current
ICES
VCE = VCES, VGE = 0V —
—
1
mA
Gate-Emitter Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
5.0
µA
Volts
Gate-Emitter Threshold Voltage
VGE(th)
IC = 250mA, VCE = 10V
5.4
6.0
6.6
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 2500A, VGE = 15V, Tj = 25°C*5
—
1.80
2.25Volts
(Terminal)
IC = 2500A, VGE = 15V, Tj = 125°C*5
—
2.00
—Volts
IC = 2500A, VGE = 15V, Tj = 150°C*5
—
2.05
—Volts
25°C*5
—
1.70
2.15Volts
IC = 2500A, VGE = 15V, Tj = 125°C*5
—
1.90
—Volts
Collector-Emitter Saturation Voltage
VCE(sat)
(Chip)
IC = 2500A, VGE = 15V, Tj =
IC = 2500A, VGE = 15V, Tj =
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
Turn-on Delay Time
QG
Emitter-Collector Voltage
Reverse Recovery Time
VCC = 600V, IC = 2500A, VGE = 15V
—
1.95
—
—
—
—
—
—
—Volts
250
nF
—
50
nF
—
4.2
nF
5800
—
nC
—
800
ns
tr
VCC = 600V, IC = 2500A, VGE = ±15V,
—
—
200
ns
td(off)
RG = 0Ω, Inductive Load
—
—
700
ns
Fall Time
Emitter-Collector Voltage
VCE = 10V, VGE = 0V
td(on)
Rise Time
Turn-off Delay Time
150°C*5
—
—
300
ns
VEC*1
tf
IE = 2500A, VGE = 0V, Tj = 25°C*5
—
1.80
2.25
Volts
(Terminal)
IE = 2500A, VGE = 0V, Tj = 125°C*5
—
1.80
—Volts
IE = 2500A, VGE = 0V, Tj = 150°C*5
—
1.80
—
Volts
VEC
IE = 2500A, VGE = 0V, Tj =
25°C*5
—
1.70
2.15
Volts
(Chip)
IE = 2500A, VGE = 0V, Tj = 125°C*5
—
1.70
IE = 2500A, VGE = 0V, Tj = 150°C*5
—
1.70
—
Volts
VCC = 600V, IE = 2500A, VGE = ±15V
—
—
300
ns
RG = 0Ω, Inductive Load
—
70
—
µC
VCC = 600V, IC = IE = 2500A,
—
174
—
mJ
*1
trr*1
*1
Reverse Recovery Charge
Qrr
Turn-on Switching Energy per Pulse
Eon
—Volts
Turn-off Switching Energy per Pulse
Eoff
VGE = ±15V, RG = 0Ω,
—
259
—
mJ
Reverse Recovery Energy per Pulse
Err*1
Tj = 150°C, Inductive Load
—
195
—
mJ
Main Terminals-Chip,
—
0.11
—
mΩ
—
1.1
—
Ω
Internal Lead Resistance
RCC' + EE'
Per Switch,TC = 25°C*4
Internal Gate Resistance
rg
Per Switch
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) are measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure on page 1 for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
5/14 Rev. 3
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM2500DY-24S
Dual Half-Bridge IGBT HVIGBT Module
2500 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Symbol
Zero Power Resistance
R25
Deviation of Resistance
∆R/R
B Constant
B(25/50)
Test Conditions
TC =
Min.
Typ.
25°C*4
TC = 100°C, R100 = 493Ω*4
Units
4.85
5.00
5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
P25
TC = 25°C*4
—
—
10
mW
Thermal Resistance, Junction to Case*4
Rth(j-c)Q
Per IGBT
—
—
13
K/kW
Case*4
Rth(j-c)D
Per FWDi
—
—
22
K/kW
Rth(c-f)
Thermal Grease Applied
—
3.1
—
K/kW
31
35
40
in-lb
Power Dissipation
Approximate by
Equation*6
Max.
Thermal Resistance Characteristics
Thermal Resistance, Junction to
Contact Thermal Resistance,
Case to
Heatsink*4
(Per 1
Module)*7
Mechanical Characteristics
Mounting Torque
Mt
Ms
Creepage Distance
ds
Clearance
da
Weight
m
Flatness of Baseplate
ec
Main Terminals, M6 Screw
Auxiliary Terminals, M4 Screw
12
13
15
in-lb
Mounting, M5 Screw 22
27
31
in-lb
Terminal to Terminal
16
—
—
mm
Terminal to Baseplate 25
—
—
mm
Terminal to Terminal
16
—
—
mm
Terminal to Baseplate 24
—
—
mm
—
2
—kg
-50
—+100
On Centerline X, Y*8
µm
Recommended Operating Conditions, Ta = 25°C
Volts
16.5
Volts
External Gate Resistance
RG
Per Switch
0
*6 B(25/50) = In(
Ω
0
24.0
52.2
82.0
—2
110.2
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
140.0
850
15.0
168.2
600
13.5
198.0
—
Applied Across G1-Es1 / G2-Es2
226.2
Applied Across C1-E2
VGE(on)
256.0
VCC
Gate-Emitter Drive Voltage
284.2
DC Supply Voltage
R25
1
1
)/(
–
)
R50 T25
T50
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure
below.
Tr2
Di2
Di1
Tr1
Tr2
Tr2
Di2
Tr1
Tr2
Di1
Di2
Di1
Tr1
Tr2
Di2
Tr1
Tr2
Di1
Di2
Di1
Tr1
Tr2
Di2
Tr1
Tr2
Di1
Di2
Di1
Tr1
Tr2
Di2
101.2
96.2
87.7
82.7
Di1
54.2
Tr1
40.7
Tr2
Di1
Di2
Tr1
Di1
Tr1
Di2
RECOMMENDED AREA FOR EVEN APPLICATION
OF THERMALLY CONDUCTIVE GREASE
(PER BASEPLATE)
0
0
25.7
54.0
46.5
83.7
112.0
141.7
170.0
199.7
X
228.0
ec
257.7
Y
286.0
- CONCAVE
45.7
24.5
Th
+ CONVEX
59.2
LABEL SIDE
Each mark points to the center position of each chip.
MOUNTING
SIDE
MOUNTING SIDE
MOUNTING SIDE
4
Tr1 / Tr2: IGBT
Di1 / Di2: FWDi
Th: NTC Thermistor
- CONCAVE
+ CONVEX
5/14 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM2500DY-24S
Dual Half-Bridge IGBT HVIGBT Module
2500 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
5000
3.5
12
13.5
15
3000
11
2000
10
1000
9
Tj = 25°C
0
0
2
4
6
8
2.5
2.0
1.5
1.0
0.5
0
1000
2000
3000
4000
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
Tj = 25°C
IC = 5000A
6
IC = 2500A
4
IC = 1000A
2
0
5000
104
8
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
5/14 Rev. 3
3.0
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
4000
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
VGE = 20V
20
Tj = 25°C
Tj = 125°C
Tj = 150°C
103
102
101
0
0.5
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM2500DY-24S
Dual Half-Bridge IGBT HVIGBT Module
2500 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
103
td(off)
Cies
td(on)
Coes
101
Cres
100
tf
tr
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
VGE = 0V
10-1
10-1
100
101
104
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
104
tf
tr
102
101
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
103
COLLECTOR CURRENT, IC, (AMPERES)
104
SWITCHING TIME, trr, td(on), (ns)
td(off)
td(on)
SWITCHING TIME, (ns)
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103
6
101
102
102
103
td(off)
tf
103
102
td(on)
tr
102
101
100
VCC = 600V
VGE = ±15V
IC = 2500A
Tj = 125°C
Inductive Load
101
101
SWITCHING TIME, tf, td(off), (ns)
102
SWITCHING TIME, (ns)
CAPACITANCE, Cies, Coes, Cres, (nF)
103
100
102
EXTERNAL GATE RESISTANCE, RG, (Ω)
5/14 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM2500DY-24S
Dual Half-Bridge IGBT HVIGBT Module
2500 Amperes/1200 Volts
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
tr
102
VCC = 600V
VGE = ±15V
IC = 2500A
Tj = 150°C
Inductive Load
101
100
101
101
100
103
Irr
trr
103
104
EXTERNAL GATE RESISTANCE, RG, (Ω)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE VS. VGE
20
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
103
102
102
Irr
trr
103
EMITTER CURRENT, IE, (AMPERES)
5/14 Rev. 3
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
102
102
102
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
104
REVERSE RECOVERY, Irr (A), trr (ns)
102
td(on)
REVERSE RECOVERY, Irr (A), trr (ns)
tf
103
104
103
td(off)
SWITCHING TIME, tf, td(off), (ns)
SWITCHING TIME, trr, td(on), (ns)
104
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
104
IC = 2500A
VCC = 600V
15
10
5
0
0
2000
4000
6000
8000
GATE CHARGE, QG, (nC)
7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM2500DY-24S
Dual Half-Bridge IGBT HVIGBT Module
2500 Amperes/1200 Volts
102
102
101
Eon
Eoff
Err
101
102
103
103
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
103
102
102
101
Eon
Eoff
Err
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
104
VCC = 600V
VGE = ±15V
IC = 2500A
Tj = 125°C
102
101
10-1
Eon
Eoff
Err
100
EXTERNAL GATE RESISTANCE, RG, (Ω)
8
100
104
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
104
103
104
SWITCHING ENERGY, Eon, Eoff, (mJ)
103
103
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
REVERSE RECIVERY ENERGY, Err, (mJ)
SWITCHING ENERGY, Eon, Eoff, (mJ)
104
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
101
103
REVERSE RECIVERY ENERGY, Err, (mJ)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
100
104
VCC = 600V
VGE = ±15V
IC = 2500A
Tj = 150°C
102
101
10-1
Eon
Eoff
Err
100
101
EXTERNAL GATE RESISTANCE, RG, (Ω)
5/14 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
CM2500DY-24S
Dual Half-Bridge IGBT HVIGBT Module
2500 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
100
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
13 K/k/W
(IGBT)
Rth(j-c) =
22 K/k/W
(FWDi)
10-1
10-2
10-3
10-2
10-1
100
101
TIME, (s)
5/14 Rev. 3
9