OIT9C – 4 bit encoder chip
The OIT9C is a 4 element monolithic phototransistor
array with a 0.6 mm optical pitch. The active area of each
element is 0.20 mm x 0.45 mm. The device features high
uniformity of the silicon sensors, high signal stability and
high optical responsivity. The small SMD plastic package
is optimized for encoder applications. Two reference
marks are available for the precise collimator positioning.
Features
Applications
–– High uniformity
–– High gain
–– High temperature range
–– Robust packaging
–– High transparency resin
–– Designed to meet industrial specifications
–– Reference holes for precise mounting
–– Extended temperature encoders
–– Optical encoders
–– Incremental encoders
–– Controls / drives
Rev. C, 10.2015
Subject to change without notice
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OIT9C – 4 bit encoder chip
Absolute maximum ratings (1)
Parameter
Min.
Max.
Unit
Operating temperature range
-40
85
°C
Storage temperature
-40
100
°C
230
°C
Lead temperature (solder) 3s
Breakdown voltage collector-emitter @ TA = 25 °C IB =1 00 nA IC = 1 mA
50
V
Power dissipation @ TA = 25 °C
150
mW
Electrostatic discharge susceptibility (Human Body Model, ESCC20800)
3
class
Electrical characteristics (2)
Parameter
Conditions
Dark current
VR = 10 V
Responsivity
VCE = 5 V, λ = 880 nm
Peak responsivity
VCE = 5 V
Spectral bandwidth @ 50%
VCE = 5 V
Emitter-collector current
VCE = 7.7 V
Collector-emitter current
VCE = 52 V
Gain
VCC = 5 V, IC = 2 mA
Saturation voltage
IE = 2 mA, IB = 20 μA
On-state collector current
VCE = 5 V, EE = 1.0 mW/cm
Min.
Typ.
Max.
Unit
5
100
nA
0.5
A/W
750
500
500
nm
950
nm
0.1
100
μA
0.1
100
μA
1100
1500
150
200
1
2
mV
mA
AC switching characteristics (2)
Parameter
Conditions
Min.
Typ.
Max.
Unit
Rise time
VCC=5 V, IC=1 mA, R1=1 kΩ
10
μs
Fall time
VCC=5 V, IC=1 mA, R1=1 kΩ
11
μs
Specification notes
(1) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. These are stress ratings only, and functional operation of the device
at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rated conditions for extended
periods may affect device reliability.
Rev. C, 10.2015
Subject to change without notice
(2)TA = 25 °C unless otherwise noted.
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Page 2/4
OIT9C – 4 bit encoder chip
Mechanical characteristics
Parameter
Min.
Typ.
Max.
Unit
Phototransistor active area
0.09
mm2
Length of active area
0.2
mm
Width of active area
0.45
mm
Package characteristics
Parameter
Value
Pad surface finishing
ENEPIG
Pad shelf life
Moisture sensitivity level
(3)
Unit
6
months
4
level
Output voltage vs. temperature
Normalized spectral responsivity
Output voltage [V]
Spectral responsivity
Typical performance curves
Temperature [°C]
Wavelength [nm]
Specification notes
(3) According to Jedec standard J-STD-020D.1
Rev. C, 10.2015
Subject to change without notice
www.first-sensor.com
contact@first-sensor.com
Page 3/4
OIT9C – 4 bit encoder chip
Physical dimensions
Top view
Side view
Dimensions in mm, mechanical tolerance ±0.2 mm, die positioning tolerance ±0.03 mm
Electrical connection
Top view
Pin
Name
Function
1
2
3
4
5
6
7
8
BE
N.C.
CC
AE
CE
N.C.
CC
DE
Phototransistor B emitter
Not connected
Common collector
Phototransistor A emitter
Phototransistor C emitter
Not connected
Common collector
Phototransistor D emitter
Ordering information
Order #
Product name
Description
501644
OIT9C
4 elements monolithic phototransistor, 0.6 mm optical pitch, SMD plastic package
Rev. C, 10.2015
Subject to change without notice
www.first-sensor.com
contact@first-sensor.com
Page 4/4