OIT9C – 4 bit encoder chip The OIT9C is a 4 element monolithic phototransistor array with a 0.6 mm optical pitch. The active area of each element is 0.20 mm x 0.45 mm. The device features high uniformity of the silicon sensors, high signal stability and high optical responsivity. The small SMD plastic package is optimized for encoder applications. Two reference marks are available for the precise collimator positioning. Features Applications –– High uniformity –– High gain –– High temperature range –– Robust packaging –– High transparency resin –– Designed to meet industrial specifications –– Reference holes for precise mounting –– Extended temperature encoders –– Optical encoders –– Incremental encoders –– Controls / drives Rev. C, 10.2015 Subject to change without notice www.first-sensor.com contact@first-sensor.com Page 1/4 OIT9C – 4 bit encoder chip Absolute maximum ratings (1) Parameter Min. Max. Unit Operating temperature range -40 85 °C Storage temperature -40 100 °C 230 °C Lead temperature (solder) 3s Breakdown voltage collector-emitter @ TA = 25 °C IB =1 00 nA IC = 1 mA 50 V Power dissipation @ TA = 25 °C 150 mW Electrostatic discharge susceptibility (Human Body Model, ESCC20800) 3 class Electrical characteristics (2) Parameter Conditions Dark current VR = 10 V Responsivity VCE = 5 V, λ = 880 nm Peak responsivity VCE = 5 V Spectral bandwidth @ 50% VCE = 5 V Emitter-collector current VCE = 7.7 V Collector-emitter current VCE = 52 V Gain VCC = 5 V, IC = 2 mA Saturation voltage IE = 2 mA, IB = 20 μA On-state collector current VCE = 5 V, EE = 1.0 mW/cm Min. Typ. Max. Unit 5 100 nA 0.5 A/W 750 500 500 nm 950 nm 0.1 100 μA 0.1 100 μA 1100 1500 150 200 1 2 mV mA AC switching characteristics (2) Parameter Conditions Min. Typ. Max. Unit Rise time VCC=5 V, IC=1 mA, R1=1 kΩ 10 μs Fall time VCC=5 V, IC=1 mA, R1=1 kΩ 11 μs Specification notes (1) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Rev. C, 10.2015 Subject to change without notice (2)TA = 25 °C unless otherwise noted. www.first-sensor.com contact@first-sensor.com Page 2/4 OIT9C – 4 bit encoder chip Mechanical characteristics Parameter Min. Typ. Max. Unit Phototransistor active area 0.09 mm2 Length of active area 0.2 mm Width of active area 0.45 mm Package characteristics Parameter Value Pad surface finishing ENEPIG Pad shelf life Moisture sensitivity level (3) Unit 6 months 4 level Output voltage vs. temperature Normalized spectral responsivity Output voltage [V] Spectral responsivity Typical performance curves Temperature [°C] Wavelength [nm] Specification notes (3) According to Jedec standard J-STD-020D.1 Rev. C, 10.2015 Subject to change without notice www.first-sensor.com contact@first-sensor.com Page 3/4 OIT9C – 4 bit encoder chip Physical dimensions Top view Side view Dimensions in mm, mechanical tolerance ±0.2 mm, die positioning tolerance ±0.03 mm Electrical connection Top view Pin Name Function 1 2 3 4 5 6 7 8 BE N.C. CC AE CE N.C. CC DE Phototransistor B emitter Not connected Common collector Phototransistor A emitter Phototransistor C emitter Not connected Common collector Phototransistor D emitter Ordering information Order # Product name Description 501644 OIT9C 4 elements monolithic phototransistor, 0.6 mm optical pitch, SMD plastic package Rev. C, 10.2015 Subject to change without notice www.first-sensor.com contact@first-sensor.com Page 4/4