CLI710
®
Clairex
IRED – Phototransistor
Reflective Object Sensor
Technologies, Inc.
March, 2002
0.500(12.7) min.
1. Cathode
Vcc
2. Anode
0.100 Dia
0.175 (4.46)
0.165 (4.21)
3. Emitter
Output
4. Collector
Ground
to header
0.048 (1.22)
0.028 (0.71)
3
0.187 (4.75)
0.179 (4.55)
Internally
4 connected
2
0.046 (1.17)
0.036 (0.91)
1
0.021 (0.53) Dia
0.017 (0.43) 43 Places
0.030 (0.76) max.
0.160 (4.08) Emitting Window
0.150 (3.81) Diameter
0.230 (5.84)
0.209 (5.31)
0.020 (0.50) Diameter
Detection Area
45°
2
2
4
1
3
1
4
3
ALL DIMENSIONS
ARE IN INCHES
(MILLIMETERS)
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature ........................................................................ -40°C to +125°C
operating temperature ..................................................................... -40°C to +100°C
lead soldering temperature(1) ........................................................................... 260°C
IRED
continuous forward DC current(2) ......................................................................35mA
description
reverse DC voltage................................................................................................5V
The CLI710 consists of an 880nm
continuous power dissipation(3)......................................................................100mW
AlGaAs IRED and a phototransistor
mounted on a custom TO-72 header. PHOTOTRANSISTOR
collector-emitter voltage ......................................................................................30V
The IRED emits a broad radiation
emitter-collector voltage ........................................................................................5V
pattern through the formed clear
continuous power dissipation(4)......................................................................100mW
epoxy lens. Radiation reflected
note:
from the target is received by a
1. 0.06” (1.5mm) from the header for 5 seconds maximum
0.020” diameter fiber optic light pipe
2. Derate linearly 0.37mA/°C from 25°C free air temperature to TA = +100°C.
attached to the active area of the
3. Derate linearly 1.07mW/°C from 25°C free air temperature to TA = +100°C.
phototransistor. For assistance or
4. Derate linearly 1.07mW/°C from 25°C free air temperature to TA = +100°C.
other configurations, call Clairex.
features
• 0.020” dia. light pipe aperture
• T0-72 package
• analog output
electrical characteristics (TA = 25°C and VCC = 5.0V unless otherwise noted)
symbol parameter
Input IRED
VF
IR
Forward voltage
Reverse current
min
typ
max
units
test conditions
-
1.50
-
1.65
10
V
µA
IF = 20mA
VR = 5V
30
5.0
-
-
20
V
V
nA
IC = 1mA, IF = 0, Ee = 0
IE = 100µA, IF = 0, Ee = 0
VCE = 10V, IF = 0, Ee = 0
Output Phototransistor
V(BR)CEO
V(BR)ECO
ID
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Dark current
Coupled
Light current(4)
150
250
µA
Crosstalk ratio(5)
3
10
ICX (ratio)
notes: 4. Measured using a Kodak 90% diffuse reflectance neutral white test card.
5. No reflective surface. ICX(ratio) = IL(µA)/ICX(µA).
IL
VCE = 5V, IF = 20mA, d = 0.030”
VCE = 5V, IF = 20mA
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Revised 3/16/06
Plano, Texas 75074-8524
www.clairex.com
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