OIT18C – 13 bit absolute encoder chip
The OIT18C is a 13 element monolithic phototransistor
array with a 0.45 mm optical pitch. The active area of each
element is 0.25 mm x 0.50 mm. The device features high
uniformity of the silicon sensors, high signal stability and
high optical responsivity. The small SMD plastic package
is optimized for encoder applications. Two reference
marks are available for the precise collimator positioning.
Features
Applications
–– High uniformity
–– High gain
–– High transparency resin
–– Very small dimensions
–– Designed to meet industrial specifications
–– Reference marks for very precise mounting
–– Custom design available
–– 0.45 mm optical pitch
–– RoHS compliant
–– Optical encoders
–– 13 bit absolute encoders
–– Optical receivers
–– Controls / drives
–– Light sensors
Rev. C, 10.2015
Subject to change without notice
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Page 1/4
OIT18C – 13 bit absolute encoder chip
Absolute maximum ratings (1)
Parameter
Min.
Max.
Unit
Operating temperature (TA)
-40
100
°C
Storage temperature (TS)
-40
100
°C
230
°C
Lead temperature (solder) 3 s (TSol)
Breakdown voltage collector-emitter @ TA=25 °C, IB= 100 n A, IC= 1 mA
50
V
Power Dissipation @ TA= 25 °C
150
mW
Electrostatic discharge susceptibility (Human Body Model, ESCC20800)
3
class
Electrical characteristics (2)
Parameter
Conditions
Dark current
VR= 10 V
Responsivity
VCE= 5 V, λ= 880 nm
Peak wavelength
VCE= 5 V
Spectral bandwidth @ 50%
VCE= 5 V
Emitter-collector current
VCE= 7.7 V
Collector-emitter current
VCE= 52 V
Gain
VCC= 5 V, IC= 2 mA
Saturation voltage
On-state collector current
Min.
Typ.
Max.
Unit
5
100
nA
0.5
A/W
750
500
nm
950
nm
0.025
100
μA
0.025
100
μA
750
1000
IE= 2 mA, IB= 20 μA
130
200
VCE= 5 V, EE= 1.0 mW/cm2
1
500
mV
mA
AC switching characteristics (2)
Parameter
Conditions
Min.
Typ.
Max.
Unit
Rise time
VCC=5 V, IC= 1 mA, R1=1 kΩ
10
μs
Fall time
VCC=5 V, IC= 1 mA, R1=1 kΩ
11
μs
Specification notes
(1) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. These are stress ratings only, and functional operation of the device
at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rated conditions for extended
periods may affect device reliability.
Rev. C, 10.2015
Subject to change without notice
(2)TA = 25 °C unless otherwise noted.
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Page 2/4
OIT18C – 13 bit absolute encoder chip
Mechanical characteristics
Parameter
Min.
Typ.
Max.
Unit
Phototransistor active area
0.125
mm2
Length of the active area
0.25
mm
Width of the active area
0.50
mm
Package characteristics
Parameter
Value
Pad surface finishing
ENEPIG or galvanic gold
Pad shelf life
Moisture sensitivity level
(3)
Unit
6
months
4
level
Output voltage vs. temperature
Normalized spectral responsivity
Output voltage [V]
Spectral responsivity
Typical performance curves
Temperature [°C]
Wavelength [nm]
Specification notes
(3) According to Jedec standard J-STD-020D.1
Rev. C, 10.2015
Subject to change without notice
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contact@first-sensor.com
Page 3/4
OIT18C – 13 bit absolute encoder chip
Physical dimensions
Top view
Side view
Dimensions in mm, mechanical tolerance ±0.2 mm, die positioning tolerance ±0.03 mm
Electrical connection
Top view
Pin
Name
Function
Pin
Name
Function
1
2
3
4
5
6
7
8
9
CC
BE
DE
FE
HE
JE
LE
N.C.
N.C.
Common collector
Phototransistor B emitter
Phototransistor D emitter
Photowtransistor F emitter
Phototransistor H emitter
Phototransistor J emitter
Phototransistor L emitter
Not connected
Not connected
10
11
12
13
14
15
16
17
18
CC
N.C.
ME
KE
IE
GE
EE
CE
AE
Common collector
Not connected
Phototransistor M emitter
Phototransistor K emitter
Phototransistor I emitter
Phototransistor G emitter
Phototransistor E emitter
Phototransistor C emitter
Phototransistor A emitter
Ordering information
Order #
Product name
Description
501642
OIT18C
13 elements monolithic phototransistor, 0.45 mm optical pitch, SMD plastic package
Rev. C, 10.2015
Subject to change without notice
www.first-sensor.com
contact@first-sensor.com
Page 4/4