STH145N8F7-2AG
Automotive-grade N-channel 80 V, 3.3 mΩ typ., 90 A
STripFET™ F7 Power MOSFET in a H²PAK-2 package
Datasheet - production data
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STH145N8F7-2AG
80 V
4 mΩ
90 A
200 W





Designed for automotive applications and
AEC-Q101 qualified
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Figure 1: Internal schematic diagram

Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code
Marking
Package
Packaging
STH145N8F7-2AG
145N8F7
H²PAK-2
Tape and reel
June 2015
DocID027933 Rev 1
This is information on a product in full production.
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www.st.com
Contents
STH145N8F7-2AG
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
4.1
H²PAK-2 package information ......................................................... 10
5
Packing information ...................................................................... 13
6
Revision history ............................................................................ 15
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STH145N8F7-2AG
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
80
V
VGS
Gate-source voltage
± 20
V
(1)
A
ID
Drain current (continuous) at TC = 25 ° C
ID
90
Drain current (continuous) at TC = 100 ° C
90
A
IDM(2)
Drain current (pulsed)
360
A
PTOT
Total dissipation at TC = 25 ° C
200
W
EAS(3)
Single pulse avalanche energy
515
mJ
Tj
Operating junction temperature
- 55 to 175
°C
Tstg
Storage temperature
Notes:
(1)Limited
(2)Pulse
by package
width is limited by safe operating area
(3)Starting
Tj =25 ° C, Id = 18.5 A, Vdd = 50 V
Table 3: Thermal data
Symbol
Rthj-pcb
(1)
Rthj-case
Parameter
Value
Unit
Thermal resistance junction-pcb
35
° C/W
Thermal resistance junction-case
0.75
° C/W
Notes:
(1)When
mounted on FR-4 board of 1inch² , 2oz Cu
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Electrical characteristics
2
STH145N8F7-2AG
Electrical characteristics
(TCASE = 25 ° C unless otherwise specified)
Table 4: On/off states
Symbol
V(BR)DSS
Parameter
Drain-source breakdown
voltage
Test conditions
VGS = 0, ID = 250 µA
Min.
Typ.
Max.
80
Unit
V
VGS = 0, VDS = 80 V
1
µA
VGS = 0, VDS = 80 V,
TJ=125 ° C
10
µA
Gate-source leakage
current
VDS = 0, VGS = ± 20 V
±
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4.5
V
RDS(on)
Static drain-source onresistance
VGS=10 V, ID = 45 A
3.3
4
mΩ
Min.
Typ.
Max.
Unit
-
6340
-
pF
-
1195
-
pF
-
105
-
pF
-
96
-
nC
-
30
-
nC
-
26
-
nC
Min.
Typ.
Max.
Unit
-
26
-
ns
-
51
-
ns
-
82
-
ns
-
44
-
ns
IDSS
Zero gate voltage
Drain current
IGSS
2.5
Table 5: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VGS = 0, VDS = 40 V, f = 1 MHz
VDD = 40 V, ID = 64 A,
VGS = 10 V
Table 6: Switching times
Symbol
td(on)
tr
td(off)
tf
4/16
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
VDD = 40 V, ID = 45 A RG=4.7 Ω,
VGS = 10 V
Fall time
DocID027933 Rev 1
STH145N8F7-2AG
Electrical characteristics
Table 7: Source drain diode
Symbol
ISD
ISDM(1)
VSD
(2)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
90
A
Source-drain current (pulsed)
-
360
A
1.2
V
Forward on voltage
VGS = 0, ISD = 90 A
-
ISD = 64 A, di/dt = 100 A/µ s,
VDD = 60 V
Tj = 150 ° C
-
58
ns
-
92
nC
-
3.2
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Notes:
(1)Pulse
width is limited by safe operating area
(2)Pulse
test: pulse duration = 300 µ s, duty cycle 1.5%
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Electrical characteristics
2.1
STH145N8F7-2AG
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
GIPD130920130848MT
ID
(A)
K
δ= 0.5
100
0.2
100µs
Operation in this area is
10
10
Limited by max RDS(on)
0.02
0.01
10
10
1
V DS(V)
-2
10
Figure 4: Output characteristics
-7
10
-6
10
-5
10
-4
10
-3
10
-2 10 -1 tp(s)
Figure 5: Transfer characteristics
GIPD130920130919MT
ID
(A)
Single pulse
10ms
Sinlge
pulse
0.1
0.1
0.1
0.05
1ms
Tj=175°C
Tc=25°C
1
-1
ID
(A)
V GS= 10V
300
300
7V
250
V DS= 2V
250
6V
200
200
150
150
5V
100
100
50
50
4V
0
0
2
4
6
8
0
0
V DS(V)
Figure 6: Normalized V(BR)DSS vs.
temperature
1
2
3
4
5
6
8
7
Figure 7: Static drain-source on resistance
GIPD120920131215MT
R DS(on)
(mΩ)
V (BR)DSS
9 V GS(V)
3.315
ID= 250µA
1.04
V GS= 10V
3.310
1.02
3.305
1
3.300
0.98
3.295
0.96
0.94
-75
6/16
3.290
-25
0 25
75
125
175 T J(°C)
DocID027933 Rev 1
20
30
40
50
60
70
80
90 ID(A)
STH145N8F7-2AG
Electrical characteristics
Figure 8: Gate charge vs. gate-source voltage
Figure 9: Capacitance variations
V GS
(V)
C
(pF)
8000
12
7000
10
C iss
6000
8
5000
6
4000
3000
4
2000
2
0
1000
0
20
40
80
60
0
0
100 Q g(nC)
Figure 10: Normalized gate threshold voltage
vs. temperature
10
20
30
40
50
60
C oss
C rss
70 V DS(V)
Figure 11: Normalized on resistance vs.
temperature
V GS(th)
R DS(on)
V GS= 10V
1.2
1.8
ID= 250µA
1.6
1
1.4
1.2
0.8
1
0.8
0.6
0.6
0.4
-75
-25
0 25
75
125
0.4
-75
175 T J(°C)
-25
0 25
75
125
175 T J(°C)
Figure 12: Source-drain diode forward characteristics
V SD
T J= -55°C
1.1
1
0.9
T J= 25°C
0.8
T J= 175°C
0.7
0.6
20
30
40
50
60
DocID027933 Rev 1
70
80
90
ID(A)
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Test circuits
3
STH145N8F7-2AG
Test circuits
Figure 13: Switching times test circuit for resistive
load
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching
and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
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STH145N8F7-2AG
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID027933 Rev 1
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Package information
4.1
STH145N8F7-2AG
H²PAK-2 package information
Figure 19: H²PAK-2 package outline
8159712_D
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DocID027933 Rev 1
STH145N8F7-2AG
Package information
Table 8: H²PAK-2 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
L
15.30
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
-
7.80
15.80
M
2.6
2.9
R
0.20
0.60
V
0°
8°
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Package information
STH145N8F7-2AG
Figure 20: H²PAK-2 recommended footprint
8159712_D
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STH145N8F7-2AG
5
Packing information
Packing information
Figure 21: Tape outline
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Packing information
STH145N8F7-2AG
Figure 22: Reel outline
T
REE L DIMENS IONS
40 mm min.
Acc ess hole
At slot location
B
D
C
N
A
G measured
Tape slot
In core for
Full radius
At hub
Tape start
Table 9: Tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
14/16
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID027933 Rev 1
Min.
Max.
330
13.2
26.4
30.4
STH145N8F7-2AG
6
Revision history
Revision history
Table 10: Document revision history
Date
Revision
05-Jun-2015
1
DocID027933 Rev 1
Changes
First release.
15/16
STH145N8F7-2AG
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