CMD166
20-40 GHz Low Noise Driver Amplifier
Features
Functional Block Diagram
► Wide bandwidth
► Low noise performance
► High linearity
► Small die size
2
Vdd
RFIN
Description
3
GB
RFOUT
1
4
The CMD166 is a wideband GaAs MMIC low
noise amplifier ideally suited for military,
space and communications systems where
small size and high linearity are needed. At 28
GHz the device delivers 9 dB of gain with a
corresponding output 1 dB compression point
of +16.5 dBm and noise figure of 4.25 dB. The
CMD166 is a 50 ohm matched design which
eliminates the need for external DC blocks and
RF port matching. The CMD166 offers full
passivation for increased reliability and moisture protection. This amplifier is the perfect
alternative to higher cost hybrid amplifiers.
Electrical Performance - Vdd = 4.0 V, TA = 25 oC, F=28 GHz
Parameter
Min
Frequency Range
Typ
Max
Units
20 - 40
GHz
9
dB
4.25
dB
Input Return Loss
10
dB
Output Return Loss
16
dB
16.5
dBm
75
mA
Gain
Noise Figure
Output P1dB
Supply Current
ver 1.3 0516
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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CMD166
20-40 GHz Low Noise Driver Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Recommended Operating Conditions
Rating
Drain Voltage, Vdd
RF Input Power
Parameter
Min
Typ
Max
Units
4.5 V
Vdd
1.0
4.0
4.5
V
+20 dBm
Idd
Channel Temperature, Tch
150 °C
Power Dissipation, Pdiss
340 mW
Thermal Resistance
75
mA
Electrical performance is measured at specific
test conditions. Electrical specifications are not
guaranteed over all recommended operating conditions.
192 °C/W
Operating Temperature
-55 to 85 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the maximum
ratings may cause permanent damage.
Electrical Specifications, Vdd = 4.0 V, TA = 25 oC
Parameter
Min
Frequency Range
Gain
Typ
Max
Min
20 - 30
8
Typ
Max
30 - 40
GHz
9.5
11
Noise Figure
4.5
5.5
Input Return Loss
11
10
dB
Output Return Loss
15
13
dB
Output P1dB
16
17.5
dBm
Output IP3
25
27
dBm
Supply Current
55
75
95
6.5
Units
55
8
9.5
dB
4.5
5.5
dB
75
95
mA
Gain Temperature
Coefficient
0.012
0.012
dB/°C
Noise Figure Temperature
Coefficient
0.012
0.012
dB/°C
ver 1.3 0516
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD166
20-40 GHz Low Noise Driver Amplifier
Typical Performance
Broadband Performance, Vdd = 4.0 V, Idd = 75 mA, TA = 25 oC
15
7
S11
S21
S22
NF
6
5
5
0
4
-5
3
-10
2
-15
1
-20
Noise Figure/dB
Response/dB
10
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Frequency/GHz
15
7
10
6
5
5
0
4
S11
S21
S22
-5
3
NF Vdd=4V
NF Vdd=3V
-10
2
-15
1
-20
Noise Figure/dB
Response/dB
Narrow-band Performance, Vdd = 4.0 V, Idd = 75 mA, TA = 25 oC
0
20
22
24
26
28
30
32
34
36
38
40
Frequency/GHz
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.3 0516
CMD166
20-40 GHz Low Noise Driver Amplifier
Typical Performance
Gain vs. Temperature, Vdd = 4.0 V
15
14
13
12
11
10
Gain/dB
9
8
7
6
5
+25C
4
+85C
3
-55C
2
1
0
20
22
24
26
28
30
32
34
36
34
36
38
40
Frequency/GHz
Noise Figure vs. Temperature, Vdd = 4.0 V
10
+25C
9
+85C
-55C
8
Noise Figure/dB
7
6
5
4
3
2
1
0
20
22
24
26
28
30
32
38
40
Frequency/GHz
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.3 0516
CMD166
20-40 GHz Low Noise Driver Amplifier
Typical Performance
Output Power, Vdd = 3.0 V & 4.0 V, TA = 25 oC
20
18
16
Response/dBm
14
12
10
8
6
P1dB Vdd=4V
Psat Vdd=4V
4
P1dB Vdd=3V
Psat Vdd=3V
2
0
20
22
24
26
28
30
32
34
36
38
40
Frequency/GHz
P1dB & Output IP3 vs. Temperature, Vdd = 4.0 V
30
28
26
P1dB T=+25C
24
Response/dBm
P1dB T=+85C
P1dB T=-55C
22
OIP3 T=+25C
OIP3 T=+85C
20
OIP3 T=-55C
18
16
14
12
10
20
22
24
26
28
30
32
34
36
38
40
Frequency/GHz
ver 1.3 0516
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD166
20-40 GHz Low Noise Driver Amplifier
Mechanical Information
Die Outline (all dimensions in microns)
1060.0
125.5
2
3
1
4
1350.0
1225.0
825.0
1350.0
Notes:
1. No connection required for unlabeled pads
2. Backside is RF and DC ground
3. Backside and bond pad metal: Gold
4. Die is 85 microns thick
5. DC bond pads are 100 microns square
ver 1.3 0516
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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CMD166
20-40 GHz Low Noise Driver Amplifier
Pad Description
Pad Diagram
2
3
1
4
Functional Description
Pad
Function
Description
1
RF in
DC blocked and 50 ohm matched
2
GB
Connect to DC ground
Schematic
R F in
Vdd
3
Vdd
Power supply voltage
Decoupling and bypass caps required
4
RF out
DC blocked and 50 ohm matched
RF out
GND
Backside
Ground
Connect to RF / DC ground
ver 1.3 0516
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD166
20-40 GHz Low Noise Driver Amplifier
Applications Information
Assembly Guidelines
The backside of the CMD166 is RF ground. Die attach should be accomplished with electrically and
thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures
should be followed for high frequency devices. The top surface of the semiconductor should be made
planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity
to the DC connections on chip.
RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use
of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.
The RF input and output require a double bond wire as shown.
The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet.
Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle
with care.
Assembly Diagram
to Vdd
100,000 pF CHIP CAP
(example: Presidio part
MVB4080X104ZGK5R3L)
RF in
RF out
100 pF CHIP CAP
(example: Presidio part
LSA1515B101M2H5R-L)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions
should be observed during handling, assembly and test.
ver 1.3 0516
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD166
20-40 GHz Low Noise Driver Amplifier
Applications Information
Biasing and Operation
The CMD166 is biased with a single positive drain supply. Performance is optimized when the drain
voltage is set to +4.0 V, though it may be set to a minimum of +2.0 V and a maximum of +4.0 V.
Turn ON procedure:
1.Apply drain voltage Vdd and set to +4 V
Turn OFF procedure:
1.Turn off drain voltage Vdd
RF power can be applied at any time.
ver 1.3 0516
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com