CMD185
4-8 GHz Low Noise Amplifier
Features
Functional Block Diagram
Vdd
► Ultra low noise figure
► High gain broadband performance
► Single supply voltage: +4.0 V @ 75 mA
► Small die size
2
Description
The CMD185 is a broadband MMIC low
noise amplifier ideally suited for EW and
communications systems where small size and
low power consumption are needed. The
broadband device delivers greater than 15 dB
of gain with a corresponding output 1 dB
compression point of +15 dBm and a noise
figure of 1.9 dB. The CMD185 is a 50 ohm
matched design eliminating the need for
external DC blocks and RF port matching.
The CMD185 offers full passivation for
increased reliability and moisture protection.
RFIN
RFOUT
1
3
Electrical Performance - Vdd = 4.0 V, TA = 25 oC, F = 6 GHz
Parameter
Min
Typ
Max
Units
Frequency Range
4-8
GHz
Gain
15.5
dB
Noise Figure
1.9
dB
Input Return Loss
10
dB
Output Return Loss
17
dB
Output P1dB
15
dBm
Supply Current
75
mA
ver 1.0 0716
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CMD185
4-8 GHz Low Noise Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Recommended Operating Conditions
Rating
Parameter
Min
Typ
Max
Units
5V
Vdd
2.0
4.0
5.0
V
+20 dBm
Idd
Drain Voltage, Vdd
RF Input Power
Channel Temperature, Tch
Power Dissipation, Pdiss
Thermal Resistance
150 °C
75
mA
Electrical performance is measured at specific
test conditions. Electrical specifications are not
guaranteed over all recommended operating conditions.
529 mW
123 °C/W
Operating Temperature
-40 to 85 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the maximum
ratings may cause permanent damage.
Electrical Specifications - Vdd = 4.0 V, TA = 25 oC
Parameter
Min
Frequency Range
Gain
Typ
Max
Min
4-6
13.5
Typ
Max
6-8
GHz
15.5
17.5
Noise Figure
2
2.8
Input Return Loss
10
13
dB
Output Return Loss
18
13
dB
Output P1dB
14
16.5
dBm
Output IP3
28
29.5
dBm
Supply Current
53
75
97
13
Units
53
15
17.5
dB
1.5
2.7
dB
75
97
mA
Gain Temperature
Coefficient
0.009
0.009
dB/°C
Noise Figure Temperature
Coefficient
0.009
0.009
dB/°C
ver 1.0 0716
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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CMD185
4-8 GHz Low Noise Amplifier
Typical Performance
Broadband Performance, Vdd = 4.0 V, Idd = 75 mA, TA = 25 oC
20
3.6
S11
S22
S21
NF
3.2
10
2.8
5
2.4
0
2
-5
1.6
-10
1.2
-15
0.8
-20
0.4
-25
Noise Figure/dB
Response/dB
15
0
0
1
2
3
4
5
6
7
8
9
10
11
12
Frequency/GHz
Narrow-band Performance, Vdd = 4.0 V, Idd = 75 mA, TA = 25 oC
20
3.6
15
3.2
S11
S22
S21
NF
Response/dB
5
2.8
2.4
0
2
-5
1.6
-10
1.2
-15
0.8
-20
0.4
-25
Noise Figure/dB
10
0
4
4.5
5
5.5
6
6.5
7
7.5
8
Frequency/GHz
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.0 0716
CMD185
4-8 GHz Low Noise Amplifier
Typical Performance
Gain vs. Temperature, Vdd = 4.0 V
18
+25C
+85C
17
-40C
16
15
Gain/dB
14
13
12
11
10
9
8
4
4.5
5
5.5
6
6.5
7
7.5
8
7.5
8
Frequency/GHz
Noise Figure vs. Temperature, Vdd = 4.0 V
4
+25C
3.5
+85C
-40C
Noise Figure/dB
3
2.5
2
1.5
1
0.5
0
4
4.5
5
5.5
6
6.5
7
Frequency/GHz
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.0 0716
CMD185
4-8 GHz Low Noise Amplifier
Typical Performance
Noise Figure, Vdd = 3.3 V, 4.0V, 5.0V, TA = 25 oC
4
Vdd=3.3V
Vdd=4.0V
3.5
Vdd=5.0V
Noise Figure/dB
3
2.5
2
1.5
1
0.5
0
4
4.5
5
5.5
6
6.5
7
7.5
8
Frequency/GHz
P1dB vs. Temperature, Vdd = 4.0 V
20
+25C
+85C
-40C
19
18
17
16
P1dB/dBm
15
14
13
12
11
10
9
8
7
6
5
4
5
6
7
8
Frequency/GHz
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.0 0716
CMD185
4-8 GHz Low Noise Amplifier
Typical Performance
P1dB, Vdd = 3.3 V, 4.0V, 5.0V, TA = 25 oC
20
19
18
17
16
P1dB/dBm
15
14
13
12
11
10
9
Vdd=3.3V
8
Vdd=4.0V
7
Vdd=5.0V
6
5
4
5
6
7
8
7
8
Frequency/GHz
Output IP3, Vdd = 3.3V, 4.0V, 5.0V, TA = 25 oC
35
34
Vdd=3.3V
33
Vdd=4.0V
32
Vdd=5.0V
31
Output IP3/dBm
30
29
28
27
26
25
24
23
22
21
20
4
5
6
Frequency/GHz
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.0 0716
CMD185
4-8 GHz Low Noise Amplifier
Mechanical Information
Die Outline (all dimensions in microns)
1199.00
2
1350.00
1
3
1214.00
719.50
701.50
125.00
1350.00
Notes:
1. No connection required for unlabeled pads
2. Backside is RF and DC ground
3. Backside and bond pad metal: Gold
4. Die is 85 microns thick
5. DC bond pads are 100 microns square
6. RF bond pads are 100 microns x 150 microns
ver 1.0 0716
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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CMD185
4-8 GHz Low Noise Amplifier
Pad Description
Pad Diagram
2
1
3
Functional Description
Pin
Function
Description
1
RF in
DC blocked and 50 ohm matched
2
Vdd
Power supply voltage
Decoupling and bypass caps required
3
RF out
DC blocked and 50 ohm matched
Schematic
RF in
Vdd
RF out
GND
Backside
Ground
Connect to RF / DC ground
ver 1.0 0716
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD185
4-8 GHz Low Noise Amplifier
Applications Information
Assembly Guidelines
The backside of the CMD185 is RF ground. Die attach may be accomplished with either electrically and
thermally conductive epoxy or eutectic attach. Standard assembly procedures should be followed for
high frequency devices. The top surface of the semiconductor should be made planar to the adjacent RF
transmission lines, and the RF decoupling capacitors placed in close proximity to the DC connections on
chip.
RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use
of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.
The RF input and output require a single bond wire as shown.
The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet.
Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle
with care.
Assembly Diagram
to Vdd
100,000 pF CHIP CAP
(example: Presidio part
MVB4080X104ZGK5R3L)
RF in
RF out
100 pF CHIP CAP
(example: Presidio part
LSA1515B101M2H5R-L)
Biasing and Operation
The CMD185P3 is biased with a single 4.0 V positive drain supply.
RF power can be applied at any time.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions
should be observed during handling, assembly and test.
ver 1.0 0716
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com