CMD206
DC-50 GHz Distributed Low Noise Amplifier
Features
Functional Block Diagram
► Ultra wideband performance
► Low noise figure
► Low power consumption
► Excellent return losses
► Small die size
2
3
ACG1
ACG2
RFOUT & Vdd
Description
The CMD206 is wideband GaAs MMIC distributed low noise amplifier die which operates
from DC to 50 GHz. The amplifier delivers
greater than 11 dB of gain with a corresponding noise figure of 3.5 dB and an output 1 dB
compression point of +12 dBm at 30 GHz. The
CMD206 is a 50 ohm matched design which
eliminates the need for RF port matching. The
CMD206 offers full passivation for increased
reliability and moisture protection.
1
4
RFIN
GB
8
Vgg
7
ACG4
ACG3
6
5
Electrical Performance - Vdd = 4.0 V, Vgg = 3.0 V , TA = 25 oC, F = 30 GHz
Parameter
Min
Frequency Range
Typ
Max
Units
DC - 50
GHz
Gain
11
dB
Noise Figure
3.5
dB
Input Return Loss
20
dB
Output Return Loss
10
dB
Output P1dB
12
dBm
Supply Current
32
mA
ver 1.2 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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CMD206
DC-50 GHz Distributed Low Noise Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Recommended Operating Conditions
Rating
Parameter
Min
Typ
Max
Units
3.0
4.0
5.0
V
Drain Voltage, Vdd
6.0 V
Vdd
Gate Voltage, Vgg
4.0 V
Idd
+20 dBm
Vgg
RF Input Power
Channel Temperature, Tch
Power Dissipation, Pdiss
Thermal Resistance
712 mW
91.2 °C/W
-55 to 85 °C
Storage Temperature
-55 to 150 °C
0
3.0
mA
3.0
V
Electrical performance is measured at specific
test conditions. Electrical specifications are not
guaranteed over all recommended operating conditions.
150 °C
Operating Temperature
32
Operation of this device outside the maximum
ratings may cause permanent damage.
Electrical Specifications, Vdd = 4.0 V, Vgg = 3.0 V, TA = 25 oC
Parameter
Min
Frequency Range
Gain
Typ
Max
Min
DC - 10
7
Typ
Max
Min
10 - 30
10
7
10
8
Max
Units
30 - 50
GHz
12
dB
4.5
dB
Noise Figure
4
3.5
Input Return Loss
20
15
10
dB
Output Return Loss
25
15
10
dB
12.5
13
10
dBm
21
22
18
dBm
Output P1dB
Output IP3
Supply Current
22
32
42
22
32
4
Typ
42
22
32
42
mA
Gain Temperature
Coefficient
0.008
0.012
0.023
dB/°C
Noise Figure Temperature
Coefficient
0.008
0.008
0.012
dB/°C
ver 1.2 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
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CMD206
DC-50 GHz Distributed Low Noise Amplifier
Typical Performance
Broadband Performance, Vdd = 4 V, Vgg = 3 V, Idd = 32 mA, TA = 25 oC
15
6.75
10
6
S11
S22
S21
NF
Response/dB
0
5.25
4.5
-5
3.75
-10
3
-15
2.25
-20
1.5
-25
0.75
-30
Noise Figure/dB
5
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Frequency/GHz
Gain vs. Temperature, Vdd = 4 V, Vgg = 3 V
20
19
+25C
+85C
-55C
18
17
16
15
14
13
Gain/dB
12
11
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Frequency/GHz
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.2 0616
CMD206
DC-50 GHz Distributed Low Noise Amplifier
Typical Performance
Noise Figure vs. Temperature, Vdd = 4 V, Vgg = 3 V
10
+25C
+85C
9
-55C
8
Noise Figure/dB
7
6
5
4
3
2
1
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Frequency/GHz
Output Power, Vdd = 4 V, Vgg = 3 V, TA = 25 oC
20
19
P1dB
18
Psat
17
16
15
14
Response/dBm
13
12
11
10
9
8
7
6
5
4
3
2
1
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Frequency/GHz
ver 1.2 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD206
DC-50 GHz Distributed Low Noise Amplifier
Typical Performance
P1dB vs. Temperature, Vdd = 4 V, Vgg = 3 V
20
+25C
+85C
-55C
19
18
17
16
15
14
P1dB/dBm
13
12
11
10
9
8
7
6
5
4
3
2
1
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Frequency/GHz
Output IP3 vs. Temperature, Vdd = 4 V, Vgg = 3 V
30
+25C
+85C
-55C
28
26
24
22
Output IP3/dBm
20
18
16
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
Frequency/GHz
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
ver 1.2 0616
CMD206
DC-50 GHz Distributed Low Noise Amplifier
Mechanical Information
Die Outline (all dimensions in microns)
425.00
275.00
2
3
4
1720.00
1506.00
1
943.50
457.50
8
7
6
5
125.00
679.50
829.50
1129.50
1279.50
2300.00
Notes:
1. No connection required for unlabeled pads
2. Backside is RF and DC ground
3. Backside and bond pad metal: Gold
4. Die is 85 microns thick
5. DC bond pads are 100 microns square
ver 1.2 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD206
DC-50 GHz Distributed Low Noise Amplifier
Pad Description
Pad Diagram
2
3
4
1
8
7
6
5
Functional Description
Pad
Function
Description
1
RF in
50 ohm matched input
2, 3
ACG1, 2
Low frequency termination. Attach bypass
capacitor per application circuit
4
RF out &
Vdd
Power supply voltage and 50 ohm matched
output
Schematic
RF in
ACG1
ACG2
RF out & Vdd
ACG3
ACG3, 4
Low frequency termination. Attach bypass
capacitor per application circuit
7
Vgg
Power supply voltage
Decoupling and bypass caps required
8
GB
Connect to DC ground
5, 6
ACG4
RF in
Vgg
GB
GND
Backside
Ground
Connect to RF / DC ground
ver 1.2 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD206
DC-50 GHz Distributed Low Noise Amplifier
Applications Information
Assembly Guidelines
The backside of the CMD206 is RF ground. Die attach should be accomplished with electrically and
thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures
should be followed for high frequency devices. The top surface of the semiconductor should be made
planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity
to the DC connections on chip.
RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use
of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.
The RF input and output require a double bond wire as shown.
The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet.
Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle
with care.
Assembly Diagram
0.1 uF CAP TO GROUND
100 pF CAP TO GROUND
(example: Presidio part
LSA1515B101M2H5R-L)
To Vdd
RF out
RF in
100 pF CAP TO GROUND
100 pF BYPASS CAP
0.1 uF CAP TO GROUND
(example: Presidio part
MVB4080X104ZGK5R3L)
0.1 uF BYPASS CAP
To Vgg
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions
should be observed during handling, assembly and test.
ver 1.2 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com
CMD206
DC-50 GHz Distributed Low Noise Amplifier
Applications Information
Application Circuit
100 pF
0.1 uF
Vdd
2
3
5
4
RF out
6
1
RF in
7
8
100 pF
0.1 uF
Vgg
100 pF
0.1 uF
Note: Drain voltage (Vdd) must be applied through a broadband bias tee or external bias network.
External DC block is required on RF input.
Biasing and Operation
The CMD206 is biased with a positive drain supply and a positive gate supply. Performance is optimized when the drain voltage is set to +4 V. The recommended gate voltage is +3 V.
Turn ON procedure:
1.Apply drain voltage Vdd and set to +4 V
2.Apply gate voltage Vgg and set to +3 V
Turn OFF procedure:
1.Turn off gate voltage Vgg
2.Turn off drain voltage Vdd
RF power can be applied at any time.
ver 1.2 0616
Custom MMIC
300 Apollo Drive Chelmsford, MA 01824 Phone (978) 467-4290 Fax (978) 467-4294
Visit us online at www.custommmic.com