PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
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Features
• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
PN2222
PN2222A
PN2222
PN2222A
PN2222
PN2222A
VCEO
VCBO
VEBO
Collector Current − Continuous
IC
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Value
Vdc
30
40
Vdc
5.0
6.0
mAdc
625
5.0
mW
mW/°C
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction-to-Case
RqJC
83.3
°C/W
TO−92
CASE 29
STYLE 1
12
1
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
1
EMITTER
Vdc
60
75
600
Operating and Storage Junction
Temperature Range
2
BASE
Unit
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
PN
2222
YWW G
G
PN2
222A
YWW G
G
PN2222
PN2222A
Y
WW
G
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 5
1
Publication Order Number:
PN2222/D
PN2222, PN2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
PN2222
PN2222A
V(BR)CEO
30
40
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
PN2222
PN2222A
V(BR)CBO
60
75
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
PN2222
PN2222A
V(BR)EBO
5.0
6.0
−
−
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
PN2222A
−
10
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
PN2222
PN2222A
PN2222
PN2222A
−
−
−
−
0.01
0.01
10
10
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
PN2222A
−
100
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
PN2222A
−
20
35
50
75
35
100
50
30
40
−
−
−
−
300
−
−
−
−
−
−
−
0.4
0.3
1.6
1.0
−
0.6
−
−
1.3
1.2
2.6
2.0
250
300
−
−
−
8.0
−
−
30
25
2.0
0.25
8.0
1.25
−
−
8.0
4.0
50
75
300
375
ICEX
ICBO
IEBO
IBL
nAdc
mAdc
nAdc
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)
PN2222A only
PN2222
PN2222A
Collector −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
PN2222
PN2222A
PN2222
PN2222A
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
PN2222
PN2222A
PN2222
PN2222A
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
PN2222
PN2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
fT
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
PN2222
PN2222A
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
PN2222A
PN2222A
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
PN2222A
PN2222A
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
PN2222A
PN2222A
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
http://onsemi.com
2
Cibo
hie
hre
hfe
MHz
pF
pF
kW
X 10− 4
−
PN2222, PN2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
5.0
25
35
200
−
150
−
4.0
Unit
SMALL−SIGNAL CHARACTERISTICS
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
PN2222A
PN2222A
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
PN2222A
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
PN2222A
hoe
rb′Cc
mMhos
ps
NF
dB
SWITCHING CHARACTERISTICS (PN2222A only)
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, VBE(off) = −0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
td
−
10
ns
tr
−
25
ns
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
ts
−
225
ns
tf
−
60
ns
ORDERING INFORMATION
Package
Shipping†
PN2222G
TO−92
(Pb−Free)
5000 Units / Bulk
PN2222AG
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
TO−92
2000 / Tape & Ammo Box
PN2222ARLRMG
TO−92
(Pb−Free)
2000 / Tape & Ammo Box
PN2222ARLRPG
TO−92
(Pb−Free)
2000 / Tape & Ammo Box
Device
PN2222ARLRA
PN2222ARLRAG
PN2222ARLRM
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
+16 V
0
-2 V
200
+16 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200
0
1 kW
< 2 ns
1k
-14 V
CS* < 10 pF
< 20 ns
1N914
-4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
http://onsemi.com
3
CS* < 10 pF
PN2222, PN2222A
hFE , DC CURRENT GAIN
1000
700
500
TJ = 125°C
300
200
25°C
100
70
50
-55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
200
500
IC/IB = 10
TJ = 25°C
300
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
t, TIME (ns)
t, TIME (ns)
100
70
50
20
10
7.0
5.0
t′s = ts - 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
200
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
500
Figure 5. Turn −On Time
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn −Off Time
http://onsemi.com
4
300
500
PN2222, PN2222A
10
10
6.0
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
8.0
NF, NOISE FIGURE (dB)
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
4.0
2.0
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
10
7.0
5.0
Ccb
3.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
RS, SOURCE RESISTANCE (OHMS)
Ceb
0.2 0.3
100 200
f, FREQUENCY (kHz)
20
2.0
0.1
0
50
50 100
20
30
CAPACITANCE (pF)
IC = 50 mA
100 mA
500 mA
1.0 mA
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
Figure 9. Capacitances
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 10. Current−Gain Bandwidth Product
1.0
+0.5
TJ = 25°C
0
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
0.8
VBE(sat) @ IC/IB = 10
1.0 V
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
RqVC for VCE(sat)
-0.5
-1.0
-1.5
RqVB for VBE
-2.0
VCE(sat) @ IC/IB = 10
0
-2.5
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
500 1.0 k
0.1 0.2
Figure 11. “On” Voltages
0.5
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
http://onsemi.com
5
500
PN2222, PN2222A
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
N
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
--2.04
2.66
1.50
4.00
2.93
--3.43
--STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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For additional information, please contact your local
Sales Representative
PN2222/D