2N5401
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
150
Vdc
Collector − Base Voltage
VCBO
160
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
1
12
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
5401
AYWW G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 4
1
Publication Order Number:
2N5401/D
2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
150
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
160
−
5.0
−
−
−
50
50
−
50
50
60
50
−
240
−
−
−
0.2
0.5
−
−
1.0
1.0
100
300
−
6.0
40
200
−
8.0
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
MHz
pF
−
dB
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Package
Shipping†
2N5401G
TO−92
(Pb−Free)
5000 Unit / Bulk
2N5401RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
2N5401
200
150
h FE , CURRENT GAIN
TJ = 125°C
100
25°C
70
50
-55°C
VCE = - 1.0 V
VCE = - 5.0 V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
100
10
20
50
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
Figure 2. Collector Saturation Region
102
1.0
VCE = 30 V
0.8
IC = ICES
101
TJ = 125°C
100
75°C
10-1
10-2
TJ = 25°C
0.9
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (A)
μ
103
REVERSE
25°C
FORWARD
0.7
0.6
VBE(sat) @ IC/IB = 10
0.5
0.4
0.3
0.2
VCE(sat) @ IC/IB = 10
0.1
10-3
0.3
0.2
0.1
0
0.1
0.2 0.3 0.4
0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.6
0
0.1
0.7
Figure 3. Collector Cut−Off Region
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
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3
50
100
θV, TEMPERATURE COEFFICIENT (mV/°C)
2N5401
2.5
TJ = - 55°C to 135°C
2.0
VBB
+8.8 V
1.5
10.2 V
1.0
0.5
10 ms
INPUT PULSE
-0.5
-1.0
-1.5
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
qVB for VBE(sat)
-2.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
50
1000
700
500
TJ = 25°C
Cibo
10
7.0
5.0
5.1 k
Vin
Cobo
30
20
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
VR, REVERSE VOLTAGE (VOLTS)
10
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
tr @ VCC = 30 V
td @ VBE(off) = 1.0 V
VCC = 120 V
10
0.2 0.3 0.5
20
1.0
2.0 3.0 5.0
10
20 30
50
100
200
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
Figure 8. Turn−On Time
1000
2000
IC/IB = 10
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
1s
t, TIME (ns)
1N914
100
100
70
50
2.0
300
RB
200
3.0
1000
700
500
Vout
0.25 mF
300
30
20
RC
Figure 6. Switching Time Test Circuit
t, TIME (ns)
C, CAPACITANCE (pF)
100
70
50
3.0 k
Values Shown are for IC @ 10 mA
100
Figure 5. Temperature Coefficients
1.0
0.2
100
Vin
qVC for VCE(sat)
0
-2.5
0.1
VCC
-30 V
tf @ VCC = 120 V
tf @ VCC = 30 V
200
ts @ VCC = 120 V
100
70
50
1.0
2.0 3.0 5.0
10
20 30
50
100
10 ms
100
10
1.0
1.0
200
0.1 ms
100 ms
30
20
0.2 0.3 0.5
1 ms
IC, COLLECTOR CURRENT (mA)
Single Pulse Test
at TA = 25°C
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Turn−Off Time
Figure 10. Safe Operating Area
http://onsemi.com
4
1000
2N5401
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
N
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
--2.04
2.66
1.50
4.00
2.93
--3.43
--STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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5
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For additional information, please contact your loca
Sales Representative
2N5401/D