BC517
Darlington Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
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COLLECTOR 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCES
30
Vdc
Collector −Base Voltage
VCB
40
Vdc
Emitter −Base Voltage
VEB
10
Vdc
Collector Current − Continuous
IC
1.0
Adc
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
PD
625
12
mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above TC = 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
BASE
2
EMITTER 3
TO−92
CASE 29
STYLE 17
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
1
12
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BC
517
AYWW G
G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
BC517G
TO−92
(Pb−Free)
5000 Units / Bulk
BC517RL1G
TO−92
(Pb−Free)
2000 / Tape & Reel
BC517ZL1G
TO−92
(Pb−Free)
2000 / Ammo Pack
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 5
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC517/D
BC517
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
30
−
−
40
−
−
10
−
−
−
−
500
−
−
100
−
−
100
30,000
−
−
−
−
1.0
−
−
1.4
−
200
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 2.0 mAdc, IBE = 0)
V(BR)CES
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 30 Vdc)
ICES
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VCB = 10 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 20 mAdc, VCE = 2.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2. fT = |hfe| • ftest
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
MHz
BC517
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
i n, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
200
BANDWIDTH = 1.0 Hz
100
10 mA
50
100 mA
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 mA
0.1
0.07
0.05
10 mA
0.03
0.02
10 20
5.0
10 20
50 100 200
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
50k 100k
50 100 200
50k 100k
Figure 3. Noise Current
14
200
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 2. Noise Voltage
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
IC = 10 mA
70
50
100 mA
30
20
1.0 mA
10
1.0
2.0
10
10 mA
8.0
100 mA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
500
0
1.0
1000
Figure 4. Total Wideband Noise Voltage
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
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3
500 1000
BC517
SMALL−SIGNAL CHARACTERISTICS
20
|h fe |, SMALL-SIGNAL CURRENT GAIN
4.0
TJ = 25°C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
VR, REVERSE VOLTAGE (VOLTS)
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
200k
hFE, DC CURRENT GAIN
TJ = 125°C
25°C
30k
20k
10k
7.0k
5.0k
-55°C
VCE = 5.0 V
3.0k
2.0k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.4
V, VOLTAGE (VOLTS)
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
500
TJ = 25°C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
100 200
500 1000
Figure 9. Collector Saturation Region
1.6
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
0.8
VCE(sat) @ IC/IB = 1000
0.6
10
2.0
3.0
Figure 8. DC Current Gain
5.0 7.0
1.0
Figure 7. High Frequency Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
100k
70k
50k
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
500
-1.0
-2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
25°C TO 125°C
*RqVC FOR VCE(sat)
-55°C TO 25°C
-3.0
25°C TO 125°C
-4.0
qVB FOR VBE
-5.0
-55°C TO 25°C
-6.0
5.0 7.0 10
Figure 10. “On” Voltages
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
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4
500
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
SINGLE PULSE
0.05
0.1
0.07
0.05
SINGLE PULSE
ZqJC(t) = r(t) • RqJCTJ(pk) - TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJATJ(pk) - TA = P(pk) ZqJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
5.0k
10k
Figure 12. Thermal Response
1.0k
700
500
IC, COLLECTOR CURRENT (mA)
()
RESISTANCE (NORMALIZED)
BC517
300
200
FIGURE A
1.0 ms
tP
TA = 25°C
TC = 25°C
100 ms
PP
1.0 s
100
70
50
PP
t1
30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
10
0.4 0.6
1/f
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
t
DUTYCYCLE + t1f + 1
tP
PEAK PULSE POWER = PP
40
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
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5
BC517
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
N
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
--2.04
2.66
1.50
4.00
2.93
--3.43
--STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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For additional information, please contact your local
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BC517/D