N-channel 450 V, 4.1 , 1.5 A, IPAK SuperMESH™ Power MOSFET

STD2NC45-1
N-channel 450 V, 4.1 Ω, 1.5 A, IPAK
SuperMESH™ Power MOSFET
Features
■
Extremely high dv/dt capability
■
100% avalanche tested
■
Gate charge minimized
■
New high voltage benchmark
3
2
1
Application
■
IPAK
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STD2NC45-1
D2NC45
IPAK
Tube
April 2009
Doc ID 9103 Rev 4
1/13
www.st.com
13
Contents
STD2NC45-1
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
............................................... 9
Doc ID 9103 Rev 4
STD2NC45-1
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
450
V
VGS
Gate- source voltage
±30
V
ID
Drain current (continuous) at TC = 25°C
1.5
A
ID
Drain current (continuous) at TC = 100°C
0.95
A
Drain current (pulsed)
6
A
Total dissipation at TC = 25°C
30
W
0.24
W/°C
3
V/ns
IDM
(1)
PTOT
Derating factor
dv/dt (2)
Tstg
Tj
Peak diode recovery voltage slope
Storage temperature
°C
–65 to 150
Max. operating junction temperature
°C
1. Pulse width limited by safe operating area
2. ISD < 0.5A, di/dt < 100 A/µs, VDD =80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
4.1
°C/W
Rthj-amb
Thermal resistance junction-ambient max
100
°C/W
Maximum lead temperature for soldering purpose
275
°C
Tl
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
1.5
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAS, VDD=50V)
25
mJ
Doc ID 9103 Rev 4
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Electrical characteristics
2
STD2NC45-1
Electrical characteristics
(TCASE = 25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 250µA, VGS = 0
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC = 125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 30V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 0.5A
V(BR)DSS
Table 6.
Symbol
Min.
Typ.
Max. Unit
450
2.3
V
1
50
µA
µA
±100
nA
3
3.7
V
4.1
4.5
Ω
Dynamic
Parameter
Test conditions
VDS > ID(on) x RDS(on)max,
ID = 0.5A
Min.
Typ.
-
1.1
gfs (1)
Forward transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz, VGS = 0
-
160
27.5
4.7
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 360V, ID = 1.5A,
VGS = 10V, RG = 4.7Ω
(see Figure 17)
-
7
1.3
3.2
Min.
Typ.
Max. Unit
S
pF
pF
pF
10
nC
nC
nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Table 7.
Symbol
4/13
Switching times
Parameter
Test conditions
Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 225V, ID = 0.5A
RG = 4.7Ω VGS = 10V
(see Figure 16)
-
6.7
4
-
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 360V, ID = 1.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 16)
-
8.5
12
18
-
ns
ns
ns
Doc ID 9103 Rev 4
STD2NC45-1
Electrical characteristics
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Min.
Typ.
Max. Unit
-
1.5
6.0
A
A
ISD = 1.5A, VGS = 0
-
1.6
V
ISD = 1.5A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see Figure 21)
-
225
530
4.7
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Doc ID 9103 Rev 4
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Electrical characteristics
STD2NC45-1
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for IPAK
Figure 3.
Thermal impedance for IPAK
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
6/13
Doc ID 9103 Rev 4
STD2NC45-1
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BVDSS vs temperature
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Electrical characteristics
STD2NC45-1
Figure 14. Max Id current vs Temperature
8/13
Figure 15. Maximum avalanche energy vs
temperature
Doc ID 9103 Rev 4
STD2NC45-1
3
Test circuits
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
Figure 19. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
Doc ID 9103 Rev 4
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Package mechanical data
4
STD2NC45-1
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/13
Doc ID 9103 Rev 4
STD2NC45-1
Package mechanical data
TO-251 (IPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
4.60
H
16.10
L
9.00
9.40
(L1)
0.80
1.20
L2
0.80
V1
10 o
0068771_H
Doc ID 9103 Rev 4
11/13
Revision history
5
STD2NC45-1
Revision history
Table 9.
12/13
Revision history
Date
Revision
Changes
21-Jun-2004
2
Complete version
12-Jul-2006
3
New template
17-Apr-2009
4
Updated mechanical data
New ECOPACK® statement in Section 4: Package mechanical
data
Doc ID 9103 Rev 4
STD2NC45-1
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Doc ID 9103 Rev 4
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