IRFB4115PbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
G
S
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead Free
l RoHS Compliant, Halogen-Free
Base Part Number
Package Type
IRFB4115PbF
TO-220
150V
9.3mΩ
11mΩ
104A
D
G
D
S
TO-220AB
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB4115PbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
e
dv/dt
TJ
TSTG
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
j
ij
1
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A
W
W/°C
V
V/ns
°C
300
x
x
10lb in (1.1N m)
d
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Units
104
74
420
380
2.5
± 20
18
-55 to + 175
830
mJ
Typ.
Max.
Units
–––
0.50
–––
0.40
–––
62
°C/W
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IRFB4115PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
Min. Typ. Max. Units
150
–––
–––
3.0
–––
–––
–––
–––
–––
–––
0.18
9.3
–––
–––
–––
–––
–––
2.3
–––
–––
11
5.0
20
250
100
-100
–––
V
V/°C
mΩ
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 3.5mA
VGS = 10V, ID = 62A
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 150V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
c
f
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Conditions
Min. Typ. Max. Units
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
97
–––
–––
–––
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related) –––
Effective Output Capacitance (Time Related)
–––
–––
77
28
26
51
18
73
41
39
5270
490
105
460
530
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
VDS = 50V, ID = 62A
ID = 62A
VDS = 75V
VGS = 10V
ID = 62A, VDS =0V, VGS = 10V
VDD = 98V
ID = 62A
RG = 2.2Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 120V , See Fig. 11
VGS = 0V, VDS = 0V to 120V
f
ns
pF
f
h
g
Diode Characteristics
Symbol
IS
Parameter
VSD
trr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Recommended max EAS limit, starting TJ = 25°C,
L = 0.17mH, RG = 25Ω, IAS = 100A, VGS =15V.
ƒ ISD ≤ 62A, di/dt ≤ 1040A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Conditions
Min. Typ. Max. Units
–––
–––
104
A
–––
–––
420
A
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 62A, VGS = 0V
TJ = 25°C
VR = 130V,
IF = 62A
TJ = 125°C
TJ = 25°C
di/dt = 100A/µs
TJ = 125°C
TJ = 25°C
f
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S
––– –––
1.3
V
–––
86
–––
ns
––– 110 –––
––– 300 –––
nC
––– 450 –––
–––
6.5
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
2
D
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IRFB4115PbF
1000
1000
100
BOTTOM
100
10
1
5.0V
BOTTOM
5.0V
10
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
0.1
1
1
10
0.1
100
Fig 1. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
T J = 175°C
100
T J = 25°C
10
1
VDS = 50V
≤60µs PULSE WIDTH
0.1
ID = 62A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
2
4
6
8
10
12
14
16
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10000
Ciss
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Coss
1000
Crss
100
10
ID= 62A
12.0
VDS= 120V
VDS= 75V
VDS= 30V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
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0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFB4115PbF
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
10
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
100
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
VSD, Source-to-Drain Voltage (V)
80
60
40
20
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
ID, Drain Current (A)
100
50
1000
200
Id = 3.5mA
190
180
170
160
150
140
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
6.0
VGS(th) , Gate threshold Voltage (V)
6.0
5.0
4.0
Energy (µJ)
100
Fig 8. Maximum Safe Operating Area
120
25
10
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
3.0
2.0
1.0
0.0
5.0
4.0
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
1.0
-20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
1msec
DC
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-75 -50 -25
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 12. Threshold Voltage vs. Temperature
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IRFB4115PbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τJ
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τC
τ2
τC
Ri (°C/W) τi (sec)
0.245
0.0059149
0.155
0.0006322
C i= τi/R i
Ci= τi/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart = 25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
5
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IRFB4115PbF
50
50
IF = 42A
V R = 130V
40
TJ = 25°C
TJ = 125°C
30
IRR (A)
IRR (A)
40
IF = 62A
V R = 130V
20
10
TJ = 25°C
TJ = 125°C
30
20
10
0
0
0
200
400
600
800
1000
0
200
diF /dt (A/µs)
800
1000
Fig 16. - Typical Recovery Current vs. dif/dt
2500
3000
IF = 42A
V R = 130V
2000
IF = 62A
V R = 130V
2400
TJ = 25°C
TJ = 125°C
1500
QRR (nC)
QRR (nC)
600
diF /dt (A/µs)
Fig 15. - Typical Recovery Current vs. dif/dt
1000
500
TJ = 25°C
TJ = 125°C
1800
1200
600
0
0
0
200
400
600
800
1000
0
200
diF /dt (A/µs)
Fig 17. - Typical Stored Charge vs. dif/dt
6
400
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400
600
800
1000
diF /dt (A/µs)
Fig 18. - Typical Stored Charge vs. dif/dt
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IRFB4115PbF
Driver Gate Drive
D.U.T
ƒ
-
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 19. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
20V
VGS
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 20a. Unclamped Inductive Test Circuit
RD
VDS
Fig 20b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 21a. Switching Time Test Circuit
tr
t d(off)
Fig 21b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2µF
.3µF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 22a. Gate Charge Test Circuit
7
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Qgs1 Qgs2
Qgd
Qgodr
Fig 22b. Gate Charge Waveform
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IRFB4115PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
g
PART NUMBER
IRFB4115
PYWW?
LC
LC
OR
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
INTERNATIONAL
RECTIFIER LOGO
ASSEMBLY
LOT CODE
PART NUMBER
IRFB4115
YWWP
LC
LC
DATE CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFB4115PbF
Qualification information†
†
Industrial
Qualification level
(per JEDEC JESD47F
Moisture Sensitivity Level
guidelines)
TO-220
N/A
Yes
RoHS compliant
†
††
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
4/28/2014
11/6/2014
Comment
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
• Updated typo on the Fig.16 and Fig.17, unit of Y-axis from "A" to "nC" on page 5.
• Added Fig 14 - Typical Avalanche Current vs Pulsewidth on page 5.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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