PD- 9.1336A
IRFR/U024N
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
Surface Mount (IRFR024N)
Straight Lead (IRFU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.075Ω
G
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
D -P ak
T O -2 52 A A
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
I-P ak
T O -25 1 A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
17
12
68
45
0.30
± 20
71
10
4.5
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
3.3
50
110
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
IRFR/U024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
4.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
34
19
27
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
370
140
65
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.075
Ω
VGS = 10V, ID = 10A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 10A†
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
20
ID = 10A
5.3
nC VDS = 44V
7.6
VGS = 10V, See Fig. 6 and 13 „†
–––
VDD = 28V
–––
ID = 10A
ns
–––
RG = 24Ω
–––
RD = 2.6Ω, See Fig. 10 „
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 17
showing the
A
G
integral reverse
68
––– –––
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 10A, VGS = 0V „
––– 56
83
ns
TJ = 25°C, IF = 10A
––– 120 180
nC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 10A. (See Figure 12)
ƒ ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
2
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
† Uses IRFZ24N data and test conditions.
www.irf.com
IRFR/U024N
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-S ource C urrent (A )
D
10
4.5V
20µ s P U LS E W ID TH
TC = 25°C
1
0.1
1
10
A
10
4.5V
0.1
100
3.0
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
I D , D ra in -to-S o urc e C urren t (A )
TJ = 2 5 °C
T J = 1 7 5 °C
10
V DS = 2 5V
2 0 µ s P U L S E W ID T H
6
7
8
9
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
www.irf.com
10
A
100
Fig 2. Typical Output Characteristics
100
5
1
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
1
20µ s P U LS E W ID TH
T C = 175°C
1
V D S , D rain-to-S ource V oltage (V )
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
10
A
I D = 17A
2.5
2.0
1.5
1.0
0.5
V G S = 10V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U024N
V GS
C is s
C rs s
C oss
C , C apacitanc e (pF )
600
500
C iss
400
C oss
=
=
=
=
20
0V ,
f = 1M H z
C gs + C gd , Cds S H O R TE D
C gd
C ds + C gd
V G S , G ate-to-S ource V oltage (V )
700
300
200
C rs s
100
0
10
V D S = 44V
V D S = 28V
16
12
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 13
0
A
1
I D = 10 A
100
0
V D S , D rain-to-S ource V oltage (V )
12
16
A
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
I D , D rain C urrent (A )
I S D , R everse D rain C urrent (A )
8
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
T J = 175°C
TJ = 25°C
10
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V S D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
4
A
2.0
100
10µ s
10
100µ s
1m s
T C = 25°C
T J = 175°C
S ingle P ulse
1
1
10m s
10
A
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
www.irf.com
IRFR/U024N
20
RD
VDS
VGS
I D , D rain C urrent (A m ps)
16
D.U.T.
RG
+
-VDD
12
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
VDS
4
90%
A
0
25
50
75
100
125
150
175
TC , C ase T em perature (°C )
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
T h erm al R es p on s e (Z th JC )
10
D = 0.5 0
1
0 .2 0
0 .1 0
0 .0 5
PD M
0 .02
0 .01
0.1
t
S IN G L E P U L S E
(T HE R M A L R E S P O N S E )
t
N otes :
1 . D uty factor D = t
0.01
0.00001
1
1
/ t
2
2
2 . P ea k T J = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
A
1
t 1 , R e c ta n g u la r P u lse D u ra tio n (se c )
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFR/U024N
1 5V
L
VD S
D R IV E R
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test
Circuit
A
E A S , S ingle P ulse A valanc he E nergy (m J)
140
TO P
120
B O TTO M
ID
4.2A
7.2A
10A
100
80
60
40
20
0
V D D = 25V
25
50
A
75
100
125
150
175
S tarting T J , Junction T em perature (°C )
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
QGD
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRFR/U024N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRFR/U024N
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
-A1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
10.42 (.410)
9.40 (.370)
1
2
LE A D A S S IG NM E N TS
1 - G A TE
3
0.51 (.020)
M IN .
-B1.52 (.060)
1.15 (.045)
3X
2X
1.14 (.045)
0.76 (.030)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2 - D RA IN
3 - SOURCE
4 - D RA IN
0.58 (.023)
0.46 (.018)
M A M B
N O TE S :
1 D IM E N S IO N ING & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
2.28 (.090)
4.57 (.180)
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE DE C O U TLIN E TO -252A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP ,
S O LD E R D IP M A X. +0.16 (.006).
Part Marking Information
TO-252AA (D-PARK)
E XA M P L E : T H IS IS A N IR F R 1 2 0
W IT H A S S E M B L Y
LOT CODE 9U1P
IN T E R N A T IO N A L
R E C T IF IE R
LO GO
A
IR F R
120
9U
ASSEMBLY
LOT CODE
8
F IR S T P O R T IO N
OF PART NUMBER
1P
S E C O N D P O R T IO N
OF PART NUMBER
www.irf.com
IRFR/U024N
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265 )
6.35 (.250 )
2.38 (.09 4)
2.19 (.08 6)
-A-
0.58 (.023 )
0.46 (.018 )
1 .2 7 (.0 50)
0 .8 8 (.0 35)
5.46 (.215 )
5.21 (.205 )
LE A D A S S IG N M E N T S
4
1 - GATE
2 - D R A IN
6.45 (.245 )
5.68 (.224 )
3 - SOU RC E
6.22 (.24 5)
5.97 (.23 5)
1.52 (.06 0)
1.15 (.04 5)
1
2
4 - D R A IN
3
-B-
N OTES:
1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 1 4.5M , 1982 .
2.28 (.09 0)
1.91 (.07 5)
9 .6 5 (.38 0)
8 .8 9 (.35 0)
2 C O N T R O LL IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T LIN E T O -2 52 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP ,
S O LD E R D IP M A X. + 0.16 (.0 06).
3X
1 .1 4 (.045)
0 .7 6 (.030)
2.28 (.090 )
3X
1.14 (.045 )
0.89 (.035 )
0.89 (.035)
0.64 (.025)
0.25 (.0 10)
M A M B
2X
0 .58 (.0 23)
0 .46 (.0 18)
Part Marking Information
TO-251AA (I-PARK)
E X A M P L E : T H IS IS A N IR F U 1 2 0
W IT H A S S E M B L Y
LO T CODE 9U1P
IN T E R N A T IO N A L
R E C T IF IE R
LO GO
IR F U
120
9U
ASSEMBLY
LOT CODE
www.irf.com
F IR S T P O R T IO N
OF PART NUMBER
1P
S E C O N D P O R T IO N
OF PART NUMBER
9
IRFR/U024N
Tape & Reel Information
TO-252AA
Dimensions are shown in millimeters (inches)
TR
TRR
1 6.3 ( .6 41 )
1 5.7 ( .6 19 )
12 .1 ( .4 7 6 )
11 .9 ( .4 6 9 )
F E E D D IR E C T IO N
TRL
16 .3 ( .64 1 )
15 .7 ( .61 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E E D D IR E C T IO N
NOTES :
1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R .
2 . A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
1 3 IN C H
16 m m
NO TES :
1. O U T L IN E C O N F O R M S T O E IA -4 81 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/98
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/