QRE1113GR
SMT Reflective Object Sensor
Features
■ Phototransistor output
■ Tape and reel packaging
■ No contact surface sensing
■ Miniature package
■ Lead form style: Gull Wing
Package Dimensions
2.90
2.50
0.60
0.40
1.00
3
4
0.94
CL
3.60
3.20
1.80
CL
0.94
1
2
Schematic
30°
1.70
1.50
0.61 Nom.
(4x)
1.10
0.90
1
2
3
4
4.80
4.40
PIN 1 ANODE
PIN 3
COLLECTOR
PIN 2 CATHODE
PIN 4 EMITTER
Notes:
1. Dimensions for all drawings are in millimeters.
2. Tolerance of ±0.15mm on all non-nominal dimensions
©2002 Fairchild Semiconductor Corporation
QRE1113GR Rev. 1.2.0
www.fairchildsemi.com
QRE1113GR — SMT Reflective Object Sensor
January 2008
Symbol
Parameter
Rating
Units
TOPR
Operating Temperature
-40 to +85
°C
TSTG
Storage Temperature
-40 to +90
°C
TSOL-I
Soldering Temperature (Iron)(2,3,4)
240 for 5 sec
°C
TSOL-F
(Flow)(2,3)
260 for 10 sec
°C
Soldering Temperature
EMITTER
IF
Continuous Forward Current
50
mA
VR
Reverse Voltage
5
V
1
A
75
mW
IFP
Peak Forward
PD
Power
Current(5)
Dissipation(1)
SENSOR
VCEO
Collector-Emitter Voltage
30
V
VECO
Emitter-Collector Voltage
5
V
IC
Collector Current
20
mA
PD
Power Dissipation(1)
50
mW
Electrical/Optical Characteristics (TA = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
1.2
1.6
V
INPUT DIODE
VF
IR
λPE
Forward Voltage
IF = 20mA
Reverse Leakage Current
VR = 5V
Peak Emission Wavelength
IF = 20mA
10
940
µA
nm
OUTPUT TRANSISTOR
ID
Collector-Emitter Dark Current
VCE = 20V, IF = 0mA
On-State Collector Current
IF = 20mA, VCE = 5V(6)
100
nA
COUPLED
IC(ON)
VCE (SAT)
0.10
0.40
Saturation Voltage
tr
Rise Time
tf
Fall Time
mA
0.3
VCC = 5V, IC(ON) = 100µA,
RL = 1kΩ
20
V
µs
20
Notes:
1. Derate power dissipation linearly 1.00mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) from housing.
5. Pulse conditions: tp = 100µs; T = 10ms.
6. Measured using an aluminum alloy mirror at d = 1mm.
©2002 Fairchild Semiconductor Corporation
QRE1113GR Rev. 1.2.0
www.fairchildsemi.com
2
QRE1113GR — SMT Reflective Object Sensor
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
1.0
IF = 10 mA
VCE = 5 V
TA = 25˚C
0.8
IC (ON) - COLLECTOR CURRENT (mA)
IC (ON)- NORMALIZED COLLECTOR CURRENT
1.0
d 0
0.6
0.4
Sensing Object:
White Paper (90% reflective)
0.2
Mirror
0.0
0
1
2
3
4
0.8
0.6
0.4
0.2
0.0
5
0
d-DISTANCE (mm)
ICEO - NORMALIZED DARK CURRENT
IC (ON) - COLLECTOR CURRENT (mA)
d = 1 mm, 90% reflection
TA = 25˚C
1.6
IF = 25mA
1.2
IF =20mA
1.0
0.8
IF =15mA
0.6
IF =10mA
0.4
IF =5mA
0.2
0.0
0.1
1
16
20
102
Normalized to:
VCE = 10 V
TA = 25˚C
10
VCE = 10 V
VCE = 5 V
101
100
10-1
10-2
25
40
55
70
85
TA - Ambient Temperature (˚C)
VCE - COLLECTOR EMITTER VOLTAGE (V)
Fig. 3 Collector Current vs. Collector to Emitter Voltage
©2002 Fairchild Semiconductor Corporation
QRE1113GR Rev. 1.2.0
12
Fig. 2 Collector Current vs. Forward Current
2.0
1.4
8
IF - FORWARD CURRENT (mA)
Fig. 1 Normalized Collector Current vs. Distance
between device and reflector
1.8
4
Fig. 4 Collector Emitter Dark Current (Normalized)
vs. Ambient Temperature
www.fairchildsemi.com
3
QRE1113GR — SMT Reflective Object Sensor
Typical Performance Curves
100
VCC = 10 V
tpw = 100 us
T=1ms
TA = 25˚C
TA = 25˚C
40
RISE AND FALL TIME (us)
IF - FORWARD CURRENT (mA)
50
30
20
10
0
1.0
1.1
1.2
1.3
1.4
tf
IC = 0.3 mA
tr
10
tf
tr
IC = 1 mA
1
0.1
1.5
1
VF - FORWARD VOLTAGE (V)
10
RL - LOAD RESISTANCE (KΩ)
Fig. 7 Rise and Fall Time vs. Load Resistance
Fig. 6 Forward Current vs. Forward Voltage
2.5
RELATIVE RADIANT INTENSITY
VF - FORWARD VOLTAGE (V)
3.0
2.0
IF = 50 mA
1.5
IF = 20 mA
IF = 10 mA
1.0
0.5
0.0
-40
-20
0
20
40
60
0.9
0.8
0.7
0.6
80
0.4
0.2
0
0.2
0.4
0.6
ANGULAR DISPLACEMENT
TA - AMBIENT TEMPERATURE (˚C)
Fig. 8 Radiation Diagram
Fig. 8 Forward Voltage vs. Ambient Temperature
©2002 Fairchild Semiconductor Corporation
QRE1113GR Rev. 1.2.0
1.0
www.fairchildsemi.com
4
QRE1113GR — SMT Reflective Object Sensor
Typical Performance Curves (Continued)
QRE1113GR — SMT Reflective Object Sensor
Taping Dimensions
Progressive Direction
2.0±0.05
4.0
ø1.5
0.25
1.75
5.5±0.05
12.0±0.3
4.75
3.73
8.0
1.98
General tolerance ±0.1
Dimensions in mm
©2002 Fairchild Semiconductor Corporation
QRE1113GR Rev. 1.2.0
www.fairchildsemi.com
5
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which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component in any component of a life support,
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I33
©2002 Fairchild Semiconductor Corporation
QRE1113GR Rev. 1.2.0
www.fairchildsemi.com
6
QRE1113GR — SMT Reflective Object Sensor
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