TIL111M, TIL117M, MOC8100M
General Purpose 6-Pin Phototransistor Optocouplers
Features
General Description
■ UL Recognized (File # E90700)
The MOC8100M, TIL111M, and TIL117M optocouplers
consist of a gallium arsenide infrared emitting diode
driving a silicon phototransistor in a 6-pin dual in-line
package.
■ VDE Recognized (File #102497 for white package)
– Add Option V (e.g., TIL111VM)
Applications
■ Power Supply Regulators
■ Digital Logic Inputs
■ Microprocessor Inputs
■ Appliance Sensor Systems
■ Industrial Controls
Schematic
Package Outlines
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
4 EMITTER
NC 3
Figure 1. Schematic
Figure 2. Package Outlines
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
May 2013
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150 VRMS
I–IV
For Rated Mains Voltage < 300 VRMS
I–IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test with
tm = 1 s, Partial Discharge < 5 pC
1594
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test with
tm = 60 s, Partial Discharge < 5 pC
1275
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
7
mm
External Clearance
7
mm
Insulation Thickness
0.5
RIO
9
Insulation Resistance at TS, VIO = 500 V
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
10
mm
Ω
www.fairchildsemi.com
2
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Device
Value
Units
-40 to +150
°C
Total Device
TSTG
Storage Temperature
All
TOPR
Operating Temperature
All
-40 to +100
°C
TSOL
Lead Solder Temperature
All
260 for 10 sec
°C
Total Device Power Dissipation @ TA = 25°C
All
250
mW
2.94
mW/°C
All
60
mA
TIL111M
3
V
PD
Derate Above 25°C
Emitter
IF
DC/Average Forward Input Current
VR
Reverse Input Voltage
IF(pk)
PD
MOC8100M, TIL117M
6
Forward Current – Peak (300 µs, 2% Duty Cycle)
All
3
A
LED Power Dissipation @ TA = 25°C
All
120
mW
1.41
mW/°C
Derate Above 25°C
Detector
VCEO
Collector-Emitter Voltage
All
30
V
VCBO
Collector-Base Voltage
All
70
V
VECO
Emitter-Collector Voltage
TIL111M, TIL117M
7
V
VEBO
Emitter-Base Voltage
All
7
Detector Power Dissipation @ TA = 25°C
All
PD
Derate Above 25°C
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
150
mW
1.76
mW/°C
www.fairchildsemi.com
3
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
Emitter
VF
IR
Input Forward
Voltage
Reverse Leakage
Current
IF = 16 mA
TA = 25°C
IF = 10 mA for
MOC8100M,
IF = 16 mA for
TIL117M
TA = 0°C to 70°C
TA = -55°C
TIL111M
1.2
1.4
MOC8100M,
TIL117M
1.2
1.4
V
1.32
TA = +100°C
1.10
VR = 3.0 V
TIL111M, TIL117M
0.001
10
µA
VR = 6.0 V
MOC8100M
0.001
10
µA
Detector
BVCEO
Collector-Emitter
Breakdown Voltage
IC = 1.0 mA, IF = 0
All
30
100
V
BVCBO
Collector-Base
Breakdown Voltage
IC = 10 µA, IF = 0
All
70
120
V
BVEBO
Emitter-Base
Breakdown Voltage
IE = 10 µA, IF = 0
All
7
10
V
BVECO
Emitter-Collector
Breakdown Voltage
IF = 100 µA, IF = 0
TIL111M, TIL117M
7
10
V
Collector-Emitter
Dark Current
VCE = 10 V, IF = 0
TIL111M, TIL117M
ICEO
ICBO
1
50
nA
VCE = 5 V, TA = 25°C
MOC8100M
0.5
25
nA
VCE = 30 V, IF = 0, TA = 70°C
TIL117M,
MOC8100M
0.2
50
µA
20
nA
10
nA
ICBO
Collector-Base Dark VCB = 10 V
Current
VCB = 5 V
CCE
Capacitance
TIL111M, TIL117M
MOC8100M
VCE = 0 V, f = 1 MHz
All
8
pF
*All Typical values at TA = 25°C
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
4
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
TA = 25°C unless otherwise specified.
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min
Typ*
Max
Unit
IF = 10 mA, VCE = 10 V
TIL117M
50
%
MOC8100M
50
%
DC Characteristics
CTRCE
Current Transfer Ratio,
Collector to Emitter
IF = 1 mA, VCE = 5 V
30
IF = 1 mA, VCE = 5 V,
TA = 0°C to +70°C
IC(ON)
On-State Collector Current
(Phototransistor Operation)
IF = 16 mA, VCE = 0.4 V
On-State Collector Current
(Photodiode Operation)
IF = 16 mA, VCB = 0.4 V
VCE (SAT) Collector-Emitter Saturation
Voltage
TIL111M
2
mA
7
µA
IC = 500 µA, IF = 10 mA
TIL117M
0.4
IC = 2 mA, IF = 16 mA
TIL111M
0.4
IC = 100 µA, IF = 1 mA
MOC8100M
0.5
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Fig. 13)
MOC8100M
20
TIL117M
10
MOC8100M
20
TIL117M
10
V
AC Characteristics
W ON
W OFF
Turn-On Time
Turn-Off Time
tr
Rise Time
MOC8100M
2
tf
Fall Time
TIL117M
2
tr
Rise Time
(Phototransistor Operation)
tf
Fall Time
(Phototransistor Operation)
IC(ON) = 2 mA, VCC = 10 V,
RL = 100 Ω (Fig. 13)
TIL111M
µs
µs
µs
10
µs
Isolation Characteristics
Symbol
VISO
Characteristic
Input-Output Isolation Voltage
Test Conditions
f = 60 Hz, t = 1 s
RISO
Isolation Resistance
VI-O = 500 VDC
CISO
Isolation Capacitance
VI-O = 0, f = 1 MHz
Min.
Typ.*
7500
Max.
Units
VAC(PK)
1011
Ω
0.2
pF
*All Typical values at TA = 25°C.
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
5
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics (Continued)
1.8
1.6
VCE = 5.0 V
TA = 25˚C
1.7
1.6
Normalized to
IF = 10 mA
1.2
1.5
1.0
NORMALIZED CTR
VF – FORWARD VOLTAGE (V)
1.4
1.4
TA = -55°C
1.3
TA = 25°C
1.2
0.8
0.6
0.4
TA = 100°C
0.2
1.1
0.0
1.0
1
10
0
100
2
4
6
8
10
12
14
16
18
20
IF – FORWARD CURRENT (mA)
IF – LED FORWARD CURRENT (mA)
Figure 4. Normalized CTR vs. Forward Current
Figure 3. LED Forward Voltage vs. Forward Current
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1.4
1.2
IF = 5 mA
NORMALIZED CTR
1.0
IF = 10 mA
0.8
IF = 20 mA
0.6
0.4
Normalized to:
IF = 10 mA
TA = 25˚C
0.2
-60
-40
1.0
0.9
IF = 20 mA
0.8
IF = 10 mA
0.6
0.5
0.4
0.3
0.2
VCE = 5.0 V
0.1
0.0
10
-20
0
20
40
60
80
VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1.0
0.9
0.8
VCE = 0.3 V
IF = 20 mA
0.6
0.5
IF = 10 mA
0.4
0.3
IF = 5 mA
0.2
0.1
0.0
100
1000
RBE – BASE RESISTANCE (kΩ)
100
TA = 25˚C
10
1
IF = 2.5 mA
0.1
IF = 20 mA
0.01
IF = 5 mA
0.001
0.01
IF = 10 mA
0.1
1
10
IC - COLLECTOR CURRENT (mA)
Figure 7. CTR vs. RBE (Saturated)
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
1000
Figure 6. CTR vs. RBE (Unsaturated)
Figure 5. Normalized CTR vs. Ambient Temperature
0.7
100
RBE – BASE RESISTANCE (kΩ)
100
TA – AMBIENT TEMPERATURE (˚C)
10
IF = 5 mA
0.7
Figure 8. Collector-Emitter Saturation Voltage vs Collector Current
www.fairchildsemi.com
6
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Characteristics
1000
IF = 10 mA
VCC = 10 V
TA = 25˚C
NORMALIZED ton – (ton(RBE) / ton(open))
5.0
SWITCHING SPEED (μs)
100
Tf
Toff
10
Ton
Tr
1
VCC = 10 V
IC = 2 mA
RL = 100 Ω
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
100
0.1
0.1
1
10
1000
10000
100000
RBE – BASE RESISTANCE (kΩ)
100
R – LOAD RESISTOR (kΩ)
Figure 10. Normalized ton vs. RBE
Figure 9. Switching Speed vs. Load Resistor
ICEO – COLLECTOR -EMITTER DARK CURRENT (nA)
NORMALIZED toff – (toff(RBE) / toff(open))
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VCC = 10 V
IC = 2 mA
RL = 100 Ω
0.4
0.3
0.2
0.1
10
100
1000
10000
100000
VCE = 10 V
TA = 25°C
1000
100
10
1
0.1
0.01
0.001
0
20
40
60
80
100
RBE – BASE RESISTANCE (kΩ)
Figure 11. Normalized toff vs. RBE
TA – AMBIENTTEMPERATURE (°C)
Figure 12. Dark Current vs. Ambient Temperature
TEST CIRCUIT
WAVEFORMS
VCC = 10 V
INPUT PULSE
IC
IF
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
ton
tf
toff
Adjust IF to produce IC = 2 mA
Figure 13. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
7
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Characteristics (Continued)
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Reflow Profile
300
260°C
280
260
>245°C = 42 s
240
220
200
180
°C
Time above
183°C = 90 s
160
140
120
1.822°C/s Ramp up rate
100
80
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 14. Reflow Profile
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
8
Option
Order Entry Identifier
(Example)
No option
TIL111M
S
TIL111SM
SR2
TIL111SR2M
T
TIL111TM
0.4" Lead Spacing
V
TIL111VM
VDE 0884
TV
TIL111TVM
VDE 0884, 0.4" Lead Spacing
SV
TIL111SVM
VDE 0884, Surface Mount
SR2V
TIL111SR2VM
Description
Standard Through-Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
V
3
TIL111
2
X YY Q
6
4
5
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One-digit year code, e.g., ‘3’
5
Two-digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are
marked with date code ‘325’ or earlier are marked in portrait format.
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
9
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Ordering Information
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Package Dimensions
Figure 15. 6-Pin DIP Through Hole
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
10
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Package Dimensions (Continued)
Figure 16. 6-Pin DIP Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
11
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Package Dimensions (Continued)
Figure 17. 6-Pin DIP 0.4” Lead Spacing
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
12
12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05
0.30 ± 0.05
4.0 ± 0.1
Ø1.5 MIN
1.75 ± 0.10
11.5 ± 1.0
21.0 ± 0.1
9.1 ± 0.20
0.1 MAX
10.1 ± 0.20
24.0 ± 0.3
Ø1.5 ± 0.1/-0
User Direction of Feed
Figure 18. Carrier Tape Specification
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
13
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Carrier Tape Specification
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
©2005 Fairchild Semiconductor Corporation
TIL111M, TIL117M, MOC8100M Rev. 1.0.3
www.fairchildsemi.com
14