TIP120/TIP121/TIP122
NPN Epitaxial Darlington Transistor
• Medium Power Linear Switching Applications
• Complementary to TIP125/126/127
Equivalent Circuit
C
B
TO-220
1
1.Base
2.Collector
R1
3.Emitter
R1 @ 8kW
R2 @ 0.12k W
Absolute Maximum Ratings*
Symbol
VCBO
VCEO
R2
E
T a = 25°C unless otherwise noted
Collector-Base Voltage
Parameter
: TIP120
: TIP121
: TIP122
Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
Ratings
60
80
100
Units
V
V
V
60
80
100
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
IB
Base Current (DC)
PC
8
A
120
mA
W
Collector Dissipation (Ta=25°C)
2
Collector Dissipation (TC=25°C)
65
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
1
TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
October 2008
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
ICEO
Collector Cut-off Current
ICBO
Collector Cut-off Current
Test Condition
IC = 100mA, IB = 0
Min.
Typ.
Max.
60
80
100
Units
V
V
V
: TIP120
: TIP121
: TIP122
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
0.5
0.5
0.5
mA
mA
mA
: TIP120
: TIP121
: TIP122
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
0.2
0.2
0.2
mA
mA
mA
2
mA
2.0
4.0
V
V
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
hFE
* DC Current Gain
VCE = 3V,IC = 0.5A
VCE = 3V, IC = 3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VBE(on)
* Base-Emitter On Voltage
VCE = 3V, IC = 3A
2.5
V
Cob
Output Capacitance
VCB = 10V, IE = 0, f =
0.1MHz
200
pF
1000
1000
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
2
TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
Electrical Characteristics* Ta=25°C unless otherwise noted
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10000
hFE, DC CURRENT GAIN
VCE = 4V
1000
100
0.1
1
3.5
IC = 250IB
3.0
2.5
2.0
1.5
1.0
VBE(sat)
VCE (sat)
0.5
0.1
10
IC[A], COLLECTOR CURRENT
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
IC[A], COLLECTOR CURRENT
Cib
10
0.1
1
10
100
1
0.1
0.01
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
s
5m
Cob
s
1m
100
DC
Cob[pF] Cib[pF], CAPACITANCE
s
0m
10 ms
0
50
f=0.1MHz
TIP120
TIP121
TIP122
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
80
PC[W], POWER DISSIPATION
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
3
TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
Typical characteristics
TIP120/TIP121/TIP122 — NPN Epitaxial Darlington Transistor
Mechanical Dimensions
TO220
© 2007 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. 1.0.0
www.fairchildsemi.com
4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
TIP120/TIP121/TIP122 Rev. A1
www.fairchildsemi.com
5
TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor
TRADEMARKS