SS9013
SS9013
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
•
•
•
•
High total power dissipation. (PT=625mW)
High Collector Current. (IC=500mA)
Complementary to SS9012
Excellent hFE linearity.
TO-92
1
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
40
Units
V
VCEO
VEBO
Collector-Emitter Voltage
20
V
Emitter-Base Voltage
5
IC
V
Collector Current
500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC =100µA, IE =0
Min.
40
BVCEO
Collector-Emitter Breakdown Voltage
IC =1mA, IB =0
20
BVEBO
Emitter-Base Breakdown Voltage
IE =100µA, IC =0
5
ICBO
Collector Cut-off Current
VCB =25V, IE =0
IEBO
Emitter Cut-off Current
VEB =3V, IC =0
hFE1
hFE2
DC Current Gain
VCE =1V, IC =50mA
VCE =1V, IC =500mA
Typ.
Max.
Units
V
V
V
64
40
100
nA
100
nA
120
120
202
VCE (sat)
Collector-Emitter Saturation Voltage
IC =500mA, IB =50mA
0.16
0.6
V
VBE (sat)
Base-Emitter Saturation Voltage
IC =500mA, IB =50mA
0.91
1.2
V
VBE (on)
Base-Emitter On Voltage
VCE =1V, IC =10mA
0.67
0.7
V
0.6
hFE Classification
Classification
D
E
F
G
H
hFE1
64 ~ 91
78 ~ 112
96 ~ 135
112 ~ 166
144 ~ 202
©2002 Fairchild Semiconductor Corporation
Rev. A4, November 2002
SS9013
Typical Characteristics
IB = 160µA
IC [mA], COLLECTOR CURRENT
18
1000
IB = 140µA
VCE = 1V
16
IB = 120µA
14
IB = 100µA
hFE, DC CURRENT GAIN
20
12
10
IB = 80µA
8
IB = 60µA
6
IB = 40µA
4
100
10
IB = 20µA
2
0
1
0
10
20
30
40
50
1
VCE [V], COLLECTOR-EMITTER VOLTAGE
1000
VBE (sat)
100
VCE (sat)
10
1000
10000
IC [mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE
IC = 10 IB
100
1000
10000
Figure 2. DC current Gain
10000
10
100
IC [mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
1
10
1000
VCE = 6V
100
10
1
1
10
100
1000
10000
IC [mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A4, November 2002
SS9013
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A4, November 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1