eGaN® TECHNOLOGY
TECHNOLOGY BRIEF: TB001
Enhancement-Mode
Gallium Nitride Technology
EFFICIENT POWER CONVERSION
The End of the Road for Silicon…
Disruptive solutions offer a path to new levels
of end product differentiation. Gallium nitride
power devices will get you there.
Here are the advantages of GaN FETs vs.
Silicon MOSFETs in your power design:
• Easy to use
• Cost effective
40 V MOSFET
200 V GaN Transistor
200 V MOSFET
10
6.5
Q G (nC)
• Enables new capabilities
40 V GaN Transistor
100
xR
3.2
Imp
xR
L
rov ower
ed FOM
Per
for
ma
1
• Reliable
edu
edu
ctio
n
ctio
n
nce
0.1
1
10
RDS(on)(m )
100
1000
GaN Enables New Capabilities
GaN is Easy To Use
• Higher Switching Frequency – lower switching losses and
lower drive power
• Works like an N-Channel MOSFET only MUCH faster
• Higher Efficiency – lower conduction and switching losses,
zero reverse recovery losses
• Comprehensive Design Support – industry studies, technical
articles, device models , application notes, white papers, demo
boards are available at www.epc-co.com
• Smaller Footprint – higher power density
GaN is Cost Effective
GaN is Reliable
• GaN on Silicon – inexpensive substrate
• Proven Technology - Phase seven reliability testing published
after 17 billion hours in the field
• Built on Existing CMOS Fab Process – reduced number of
process steps
• Lowers System Cost – allows smaller and fewer passive
components
• Secure Supply Chain
• GaN is Inherently Radiation Tolerant
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2016 |
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TECHNOLOGY BRIEF: TB001
eGaN® TECHNOLOGY
Enhancement-Mode Gallium Nitride (eGaN®) Transistors and Integrated Circuits
0
1 mm
2 mm
3 mm
4 mm
5 mm
6 mm
7 mm
8 mm
9 mm
10 mm
11 mm
12 mm
13 mm
14 mm
15 mm
16 mm
17 mm
18 mm
19 mm
20 mm
21 mm
19 mm
20 mm
21 mm
0
1 mm
2 mm
3 mm
4 mm
5 mm
6 mm
Field Plate
A GaN transistor is a wide bandgap device with superior
conductivity compared to traditional silicon transistors
resulting in smaller devices and lower capacitance for the
same RDS(on). AlGaN
Protection Dielectric
S
Enhancement-mode (normally-off ) operation allows power
designers to take advantage of the performance benefits of
gallium nitride in a switching application.
G
D
GaN
Two Dimensional
Electron Gas (2DEG)
Aluminum Nitride
Isolation Layer
Si
Capacitance and inductance impede switching speed.
eGaN FETs’ small size and lateral structure give ultra low
capacitance while the Land Grid Array (LGA) package gives
low inductance enabling unprecedented switching performance in terms of speed, voltage overshoot and ringing. Zero QRR also reduces losses at high frequency.
eGaN FET’s switching performance enables higher power density, higher frequency, higher switching precision, higher bus voltage, and less voltage overhead.
The technology can be scaled over many power and voltage levels.
~3V overshoot @ 15 A
12
VIN =28 V
Gate to Source Voltage (V)
10
IOUT =15 A
~1.1ns Rise Time at 28 V
8
MOSFET
6
eGaN FET
4
2
0
5 V/ div
0
10
20
30
40
20 ns/ div
50
Total Gate Charge (nC)
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2016 |
| 2
TECHNOLOGY BRIEF: TB001
eGaN® TECHNOLOGY
Applications
• Wireless Power – eGaN FETs and ICs are perfect for 6.78 MHz frequency
• RF Amplifier – lower cost below 2 GHz
• Envelope Tracking – Double the efficiency of RF power amplifier
• Motor Drive – higher frequency reduces motor size
• LiDAR – Short pulse width at high current = high resolution imaging
• Medical – enhanced image resolution at lower cost
• Class-D Audio – smaller with better sound quality
• Analog Switching – higher power and higher frequency at higher voltages
• Isolated DC-DC Converter – higher power density
• LED Lighting – higher power density and better control
• POL Converter – higher efficiency with better transient response
Demonstration Boards for eGaN FETs and ICs Available:
Part Number
Description
Featured Product
EPC9101
1 MHz Buck Converter: 19 V to 1.2 V, 18 A
EPC2015/EPC2014
EPC9105
1.2 MHz Intermediate Bus Converter: 48 V to 12 V, 30 A
EPC2001/EPC2015
EPC9106
250 W / 4 Ohm Class-D Audio Amplifier
EPC2016
EPC9107
Buck Converter: 28 V to 3.3 V, 15 A
EPC2015
EPC9111/EPC9112
ZVS Class-D Wireless Demo Kit
EPC2014/EPC2007C/EPC2038
EPC9113
16 W ZVS Class-D Wireless Demo Kit
EPC2108/EPC2036
EPC9114
10 W ZVS Class-D Wireless Demo Kit
EPC2107/EPC2036
EPC9115
48 V to 12 V 1/8th Brick Converter
EPC2021/EPC2020
EPC9118
48 V to 5 V 400 kHz Buck Converter
EPC2001/EPC2021
EPC9013
Multiple Half Bridges in Parallel (35 A)
EPC2001
EPC9201
DrGaN
40 A Half Bridge Evaluation Board
EPC2015C/EPC2023
EPC9203
DrGaN
20 A Half Bridge Evaluation Board
EPC2021
EPC950x
Amplifer board for Wireless Power Demonstration System
Varies
EPC90xx
Half Bridge Plus Driver
Available for most part numbers
PLUS
PLUS
Schematics, bill of materials, and gerber files for all demo boards are available at epc-co.com
* Subject to change without notification.
Development Boards and Demonstration Circuits Speed Time to Market.
See the full listing of available boards at: http://epc-co.com/epc/Products/DemoBoards.aspx
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2016 |
| 3
TECHNOLOGY BRIEF: TB001
eGaN® TECHNOLOGY
Design Support Available @ www.epc-co.com
eGaN FET and IC Selector Guide
Configuration
VDS
Max RDS(on) (mΩ)
@5VGS
QG typ
(nC)
QGS typ
(nC)
QGD max
(nC)
QOSS typ
(nC)
QRR (nC)
ID (A)
Pulsed
ID (A)
LGA Package
(mm)
Demo Board
EPC2040
Single
15
28
0.93
0.27
0.16
0.45
0
3.4
28
1.2 x 0.85
n/a
EPC2100
Half Bridge
30
8
2
3.5
15
1.4
4.6
0.57
2.6
5.5
28
0
9.5
38
100
400
6.1 x 2.3
EPC9036
EPC2023
Single
30
1.3
20
5.80
1.90
28
0
60
590
6.1 x 2.3
EPC9031
EPC2024
Single
40
1.5
19
6.40
2.00
32
0
60
550
6.1 x 2.3
EPC9032
EPC2030
Single
40
2.4
18
5.20
3.40
41
0
31
495
4.6 x 2.6
EPC9060
EPC2015C
Single
40
4
8.7
3.0
1.4
19
0
36
235
4.1 x 1.6
EPC9001C
EPC2014C
Single
40
16
2.00
0.70
0.30
4.00
0
10
60
1.7 x 1.1
EPC9005C
EPC8004
Single
40
110
0.37
0.12
0.047
0.63
0
2.7
7.5
2.1 x 0.85
EPC9024
EPC2020
Single
60
2.2
16
5.00
2.00
42
0
60
470
6.1 x 2.3
EPC9033
EPC2031
Single
60
2.6
17
5.20
3.20
50
0
31
450
4.6 x 2.6
EPC9061
EPC2035
Single
60
45.0
1
0.25
0.16
3
0
1
24
0.9 x 0.9
EPC9049
2.7
12
1
3.7
0.50
2.5
9
45
0
9.5
38
80
350
6.1 x 2.3
EPC9037
Part Number
EPC2101
Half Bridge
60
11.5
2.7
EPC2102
Half Bridge
60
4.4
6.8
2.3
1.4
23/31
0
23
215
6.1 x 2.3
EPC9038
EPC2108
Dual
Integrated Bootstrap
60
100
190
2800
0.22
0.044
0.085
0.016
0.045
0.005
0.65/1
0.1
0
1.7
0.5
5.5
0.5
1.35 x 1.35
EPC9509
EPC8009
Single
65
130
0.37
0.12
0.055
0.94
0
2.7
7.5
2.1 x 0.85
EPC9029
EPC8002
Single
65
530
0.141
0.059
0.009
0.244
0
2*
2
2.1 x 0.85
EPC9022
EPC2021
Single
80
2.5
15
3.80
2.10
56
0
60
420
6.1 x 2.3
EPC9034
EPC2029
Single
80
3.2
13
4.00
2.50
57
0
31
360
4.6 x 2.6
EPC9046
2.5
10
1
3.2
0.50
2
11
55
0
9.5
38
75
320
6.1 x 2.3
EPC9041
EPC2105
Half Bridge
80
14.5
3.5
EPC2103
Half Bridge
80
5.5
6.5
2
1.3
29/39
0
23
195
6.1 x 2.3
EPC9039
EPC2104
Half Bridge
100
6.3
7
2
1.2
35/36
0
23
165
6.1 x 2.3
EPC9040
EPC2106
Half Bridge
100
70
0.73
0.76
0.22
0.24
0.165
3.4
4.4
0
1.7
18
1.35 x 1.35
EPC9055
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2016 |
| 4
TECHNOLOGY BRIEF: TB001
eGaN® TECHNOLOGY
eGaN FET and IC Selector Guide (continued)
Configuration
VDS
Max RDS(on) (mΩ)
@5VGS
QG typ
(nC)
QGS typ
(nC)
QGD max
(nC)
QOSS typ
(nC)
QRR (nC)
ID (A)
Pulsed
ID (A)
LGA
Package
(mm)
Demo Board
EPC2107
Dual,
Integrated Bootstrap
100
100
320
2800
0.16
0.044
0.065
0.016
0.04
0.005
0.8/1.4
0.14
0
1.7
0.5
3.8
0.5
1.35 x 1.35
EPC9510
EPC2022
Single
100
3.2
13
3.70
2.00
62
0
60
360
6.1 x 2.3
EPC9035
EPC2032
Single
100
4.0
12
3.10
2.00
66
0
48
340
4.6 x 2.6
EPC9062
EPC2001C
Single
100
7
7.50
2.40
1.20
31.00
0
36
150
4.1 x 1.6
EPC9002C
EPC2016C
Single
100
16
3.40
1.10
0.55
16.00
0
18
75
2.1 x 1.6
EPC9010C
EPC2007C
Single
100
30
1.60
0.60
0.30
8.30
0
6
40
1.7 x 1.1
EPC9006C
EPC2036
Single
100
65
0.70
0.17
0.14
3.90
0
1
18
0.9 x 0.9
EPC9050
EPC2037
Single
100
550
0.115
0.03
0.023
0.53
0
1
2.4
0.9 x 0.9
EPC9051
EPC2038
Single
100
2800
0.044
0.016
0.005
0.14
0
0.5
0.5
0.9 x 0.9
EPC9507
EPC8010
Single
100
160
0.360
0.130
0.060
2.200
0
2.7
7.5
2.1 x 0.85
EPC9030
EPC2110
Dual,
Common Source
120
60
0.8
0.25
0.19
4.9
0
3.4
20
1.35 x 1.35
n/a
EPC2033
Single
150
7.0
10
3.50
1.70
66
0
31
260
4.6 x 2.6
EPC9047
EPC2034
Single
200
10.0
9
2.60
1.40
80
0
31
140
4.6 x 2.6
n/a
EPC2010C
Single
200
25
3.70
1.30
0.70
40.00
0
22
90
3.6 x 1.6
EPC9003C
EPC2019
Single
200
50
1.80
0.60
0.35
18.00
0
8.5
42
2.7 x 0.95
EPC9014
EPC2012C
Single
200
100
1.00
0.30
0.20
10.00
0
5
22
1.7 x 0.9
EPC9004C
EPC2025
Single
300
150
1.90
0.61
0.30
20.00
0
4
20
1.95 x 1.95
EPC9042
Part Number
For More Information
EFFICIENT POWER CONVERSION
Please contact info@epc-co.com
or your local sales representative
Visit our website: epc-co.com
Sign-up to receive EPC updates at
bit.ly/EPCupdates or text “EPC” to 22828
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2016 |
eGaN is a registered trademark of Efficient Power Conversion Corporation
| 5