IPN60R2K1CE
MOSFET
600VCoolMOSªCEPowerTransistor
PG-SOT223
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Drain
Pin 2
Gate
Pin 1
Applications
Source
Pin 3
Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
2.1
Ω
Qg,typ
6.7
nC
ID,pulse
5.9
A
Eoss@400V
0.76
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
Package
Marking
IPN60R2K1CE
PG-SOT223
60S2K1
Final Data Sheet
1
RelatedLinks
see Appendix A
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
3.7
2.4
A
TC = 25°C
TC = 100°C
-
5.9
A
TC = 25°C
-
-
11
mJ
ID = 0.4A; VDD = 50V
EAR
-
-
0.06
mJ
ID = 0.4A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
0.4
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation
Ptot
-
-
5.0
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
1.0
A
TC=25°C
IS,pulse
-
-
5.9
A
TC = 25°C
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
dif/dt
-
-
500
A/µs VDS=0...400V,ISD<=IS,Tj=25°C
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
Diode pulse current
3)
Reverse diode dv/dt
3)
Maximum diode commutation speed
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - solder
point
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJS
-
-
24.7
°C/W -
Thermal resistance, junction - ambient
RthJA
for minimal footprint
-
-
160
°C/W minimal footprint
Thermal resistance, junction - ambient
RthJA
soldered on copper area
-
-
75
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer 70µm
°C/W thick) copper area for drain
connection and cooling. PCB is
vertical without blown air.
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Tsold
reflow MSL3
1)
DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
3
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=0.25mA
3
3.50
V
VDS=VGS,ID=0.06mA
-
10
1
-
µA
VDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.89
4.91
2.10
-
Ω
VGS=10V,ID=0.8A,Tj=25°C
VGS=10V,ID=0.8A,Tj=150°C
Gate resistance
RG
-
12
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
VGS(th)
2.50
Zero gate voltage drain current
IDSS
Gate-source leakage curent
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
140
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
12
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1)
Co(er)
-
8.5
-
pF
VGS=0V,VDS=0...480V
Effective output capacitance, time
related2)
Co(tr)
-
29.6
-
pF
ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time
td(on)
-
7
-
ns
VDD=400V,VGS=13V,ID=0.9A,
RG=12.2Ω
Rise time
tr
-
7
-
ns
VDD=400V,VGS=13V,ID=0.9A,
RG=12.2Ω
Turn-off delay time
td(off)
-
30
-
ns
VDD=400V,VGS=13V,ID=0.9A,
RG=12.2Ω
Fall time
tf
-
50
-
ns
VDD=400V,VGS=13V,ID=0.9A,
RG=12.2Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
0.8
-
nC
VDD=480V,ID=0.9A,VGS=0to10V
Gate to drain charge
Qgd
-
3.6
-
nC
VDD=480V,ID=0.9A,VGS=0to10V
Gate charge total
Qg
-
6.7
-
nC
VDD=480V,ID=0.9A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=480V,ID=0.9A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
2)
Final Data Sheet
4
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=0.9A,Tf=25°C
180
-
ns
VR=400V,IF=0.9A,diF/dt=100A/µs
-
0.67
-
µC
VR=400V,IF=0.9A,diF/dt=100A/µs
-
7.1
-
A
VR=400V,IF=0.9A,diF/dt=100A/µs
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
5
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
101
6
1 µs
5
10 µs
100
100 µs
4
ID[A]
Ptot[W]
1 ms
3
10 ms
10-1
DC
2
10-2
1
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
1
102
10
1 µs
0.5
10 µs
100
101
0.2
100 µs
0.1
ZthJC[K/W]
ID[A]
1 ms
10 ms
-1
10
DC
0.05
10
0
0.02
0.01
single pulse
10-2
10-3
10-1
100
101
102
103
10-2
10-5
10-4
10-3
VDS[V]
10-1
100
101
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-2
ZthJC=f(tP);parameter:D=tp/T
6
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
7
4.5
20 V
10 V
6
20 V
10 V
8V
4.0
3.5
8V
5
7V
3.0
4
ID[A]
ID[A]
7V
3
2.5
2.0
6V
1.5
5.5 V
1.0
5V
6V
2
5.5 V
1
5V
4.5 V
0.5
4.5 V
0
0
5
10
15
0.0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
7.0
6
6.5
6V
5V
6.5 V
7V
5
5.5 V
6.0
4
RDS(on)[Ω]
RDS(on)[Ω]
5.5
5.0
10 V
98%
3
typ
4.5
2
4.0
1
3.5
3.0
0
1
2
3
4
0
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=0.8A;VGS=10V
7
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
7
10
9
6
25 °C
8
5
120 V
7
480 V
6
ID[A]
VGS[V]
4
3
150 °C
5
4
3
2
2
1
1
0
0
2
4
6
8
10
0
12
0
2
VGS[V]
4
6
8
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=0.9Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
12
25 °C
125 °C
10
101
IF[A]
EAS[mJ]
8
100
6
4
2
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=0.4A;VDD=50V
8
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
700
680
103
660
640
Ciss
C[pF]
VBR(DSS)[V]
10
620
2
600
Coss
101
580
Crss
560
10
0
540
520
-75
-50
-25
0
25
50
75
100
125
150
175
10-1
0
100
200
Tj[°C]
300
400
500
600
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
1.4
1.2
Eoss[µJ]
1.0
0.8
0.6
0.4
0.2
0.0
0
100
200
300
400
500
600
VDS[V]
Eoss=f(VDS)
Final Data Sheet
9
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
10
ID
VDS
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
6PackageOutlines
DOCUMENT NO.
Z8B00180553
SCALE
DIM
A
A1
A2
b
b2
c
D
E
E1
e
e1
L
N
O
MILLIMETERS
MIN
MAX
1.52
1.80
0.10
1,50
1.70
0.60
0.80
2.95
3.10
0.24
0.32
6.30
6.70
6.70
7.30
3.30
3.70
2.3 BASIC
4.6 BASIC
0.75
1.10
3
0
INCHES
MIN
0.060
0.059
0.024
0.116
0.009
0.248
0.264
0.130
MAX
0.071
0.004
0.067
0.031
0.122
0.013
0.264
0.287
0.146
0.091 BASIC
0.181 BASIC
0.030
0.043
3
2.5
0
2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
24-02-2016
REVISION
01
Figure1OutlinePG-SOT223,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
7AppendixA
Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
12
Rev.2.0,2016-04-29
600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
RevisionHistory
IPN60R2K1CE
Revision:2016-04-29,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-04-29
Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2016InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
13
Rev.2.0,2016-04-29