IPP50R380CE
MOSFET
500VCoolMOSªCEPowerTransistor
PG-TO220
tab
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation
whilerepresentingacostappealingalternativecomparedtostandard
MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits
ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.
Extremelylowswitchingandconductionlossesmakeswitching
applicationsevenmoreefficient,morecompact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.38
Ω
ID
14.1
A
Qg,typ
24.8
nC
ID,pulse
32.4
A
Eoss @ 400V
2.54
µJ
Type/OrderingCode
Package
Marking
IPP50R380CE
PG-TO 220
5R380CE
Final Data Sheet
1
RelatedLinks
see Appendix A
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
14.1
8.9
A
TC = 25°C
TC = 100°C
-
32.4
A
TC=25°C
-
-
173
mJ
ID =4A; VDD = 50V
EAR
-
-
0.26
mJ
ID =4A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
4.0
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...400V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation (non FullPAK)
TO-220
Ptot
-
-
98
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
-
-
60
Ncm M3 and M3.5 screws
IS
-
-
10
A
TC=25°C
Diode pulse current
IS,pulse
-
-
32.4
A
TC = 25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs
Maximum diode commutation speed3)
dif/dt
-
-
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C,
tcond<2µs
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
Mounting torque (non FullPAK) TO-220 Continuous diode forward current
2)
2Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)TO-220
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
1.27
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Tsold
1.6mm (0.063 in.) from case for 10s
1)
Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
3
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500VCoolMOSªCEPowerTransistor
IPP50R380CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
3.50
V
VDS=VGS,ID=0.26mA
-
10
1
-
µA
VDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.35
0.90
0.38
-
Ω
VGS=13V,ID=3.2A,Tj=25°C
VGS=13V,ID=3.2A,Tj=150°C
Gate resistance
RG
-
3
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
500
-
Gate threshold voltage
V(GS)th
2.50
Zero gate voltage drain current
IDSS
Gate-source leakage curent
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
584
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
40
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1)
Co(er)
-
32
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related2)
Co(tr)
-
133
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
7.2
-
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
Rise time
tr
-
5.6
-
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
Turn-off delay time
td(off)
-
35
-
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
Fall time
tf
-
8.6
-
ns
VDD=400V,VGS=13V,ID=3.9A,
RG=3.4Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
3.1
-
nC
VDD=400V,ID=3.9A,VGS=0to10V
Gate to drain charge
Qgd
-
13.1
-
nC
VDD=400V,ID=3.9A,VGS=0to10V
Gate charge total
Qg
-
24.8
-
nC
VDD=400V,ID=3.9A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.3
-
V
VDD=400V,ID=3.9A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)
Final Data Sheet
4
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=3.9A,Tf=25°C
207
-
ns
VR=400V,IF=3.9A,diF/dt=100A/µs
-
1.7
-
µC
VR=400V,IF=3.9A,diF/dt=100A/µs
-
15.5
-
A
VR=400V,IF=3.9A,diF/dt=100A/µs
Min.
Typ.
Max.
VSD
-
0.85
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
5
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
100
90
1 µs
80
10
1
70
10 µs
100 µs
ID[A]
Ptot[W]
60
50
10
1 ms
0
10 ms
40
DC
30
10-1
20
10
0
0
40
80
120
10-2
160
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
1 µs
101
100
ZthJC[K/W]
ID[A]
10 µs
100 µs
100
1 ms
10 ms
0.2
0.1
10
-1
0.05
0.02
DC
10-1
10-2
0.5
0.01
single pulse
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
6
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
Typ.outputcharacteristicsTj=25°C
Typ.outputcharacteristicsTj=125°C
40
25
35
20 V
30
10 V
20 V
10 V
20
25
15
7V
ID[A]
ID[A]
8V
8V
20
7V
10
15
10
6V
5.5 V
6V
5
5.5 V
5
5V
4.5 V
5V
4.5 V
0
0
5
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Typ.drain-sourceon-stateresistance
Drain-sourceon-stateresistance
1.4
1.2
1.0
1.2
5.5 V
7V
0.8
6V
98%
RDS(on)[Ω]
RDS(on)[Ω]
5V
6.5 V
1.0
0.6
typ
0.4
10 V
0.8
0.2
0.6
0
5
10
15
20
0.0
-60 -40 -20
0
20
40
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
60
80 100 120 140 160 180
Tj[°C]
RDS(on)=f(Tj);ID=3.2A;VGS=13V
7
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
Typ.transfercharacteristics
Typ.gatecharge
35
10
25 °C
9
30
8
25
120 V
7
400 V
6
VGS[V]
ID[A]
20
150 °C
15
5
4
3
10
2
5
1
0
0
2
4
6
8
0
10
0
10
VGS[V]
20
30
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=3.9Apulsed;parameter:VDD
Avalancheenergy
Drain-sourcebreakdownvoltage
200
580
180
560
160
540
140
VBR(DSS)[V]
EAS[mJ]
120
100
80
60
520
500
480
40
460
20
0
0
25
50
75
100
125
150
175
440
-60
-20
Tj[°C]
60
100
140
180
Tj[°C]
EAS=f(Tj);ID=4A;VDD=50V
Final Data Sheet
20
VBR(DSS)=f(Tj);ID=1mA
8
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
Typ.capacitances
Typ.Cossstoredenergy
4
10
4.0
3.5
103
3.0
Ciss
Eoss[µJ]
C[pF]
2.5
102
Coss
2.0
1.5
101
1.0
Crss
0.5
100
0
100
200
300
400
500
0.0
0
VDS[V]
100
200
300
400
500
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Eoss=f(VDS)
Forwardcharacteristicsofreversediode
102
101
IF[A]
125 °C
25 °C
100
10-1
0.4
0.6
0.8
1.0
1.2
1.4
VSD[V]
IF=f(VSD);parameter:Tj
Final Data Sheet
9
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
10
ID
VDS
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
6PackageOutlines
Figure1OutlinePG-TO220,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
7AppendixA
Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
12
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
RevisionHistory
IPP50R380CE
Revision:2016-06-13,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2012-08-24
Release of final version
2.1
2014-06-06
Removal of TO-220FP
2.2
2016-06-13
Updated ID rating, Zth, SOA and Pd curves
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TrademarksupdatedAugust2015
OtherTrademarks
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©2016InfineonTechnologiesAG
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LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
13
Rev.2.2,2016-06-13