Analog Power
AM2325P
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
0.055 @ VGS = -4.5V
-20
0.089 @ VGS = -2.5V
ID (A)
-3.6
0.20 @ VGS = -1.8V
-2.8
-1.8
G
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings
Drain-Source Voltage
-20
VDS
Gate-Source Voltage
±12
VGS
TA=25oC
Continuous Drain Currenta
o
TA=70 C
Pulsed Drain Currentb
-10
TA=25 C
o
TA=70 C
1.25
PD
Operating Junction and Storage Temperature Range
A
±0.46
o
Power Dissipationa
A
-2.9
IS
Continuous Source Current (Diode Conduction)
V
-3.6
ID
IDM
a
Units
W
0.8
TJ, Tstg
o
C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t <= 5 sec
Steady-State
RTHJA
Maximum
100
166
Units
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM2325_J
Analog Power
AM2325P
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
-0.7
VDS = 0 V, VGS = ±8 V
VDS = -16 V, VGS = 0 V
o
VDS = -16 V, VGS = 0 V, TJ = 55 C
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -3.6 A
VGS = -2.5 V, ID = -2.8 A
VGS = -1.8 V, ID = -1.8 A
VDS = -5 V, ID = -3.6 A
IS = -0.46 A, VGS = 0 V
±100
nA
-1
-10
uA
-10
A
55
89
200
mΩ
12
-0.60
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -5 V, VGS = -4.5 V,
ID = -3.6 A
VDD = -10 V, IL = -1 A,
VGEN = -4.5 V, RG = 6 Ω
16.7
1.8
1.9
9
4
25
20
nC
ns
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential
or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer
application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products
are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal
injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall
indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an
Equal Opportunity/Affirmative Action Employer.
2
Publication Order Number:
DS-AM2325_J
Analog Power
AM2325P
Typical Electrical Characteristics
20
15
VGS = -4.5V
T A = -55oC
-2.5V
25oC
15
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
-3.0V
-2.0V
10
5
0
0
1
2
3
10
125oC
5
0
4
0.5
1
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
2.5
1500
CISS
1200
CAPACITANCE (pF)
1.4
VGS = -2.5V
1.2
-4.5V
1
900
600
COSS
300
CRSS
0
0.8
0
0
5
10
-ID, DIRAIN CURRENT (A)
15
5
20
10
15
20
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 4. Capacitance
Figure 3. On-Resistance vs. Drain Current
-10
RDS(ON), NORMALIZED
-8
-6
-4
-2
DRAIN-SOURCE ON-RESISTANCE
1.6
ID=-3.6A
Vgs Voltage ( V )
RDS(ON), NORMALIZED
2
Figure 2. Transfer Characteristics
1.6
DRAIN-SOURCE ON-RESISTANCE
1.5
-V GS, GATE TO SOURCE VOLTAGE (V)
VGS = -4.5V
1.4
1.2
1
0.8
0.6
0
-50
0
4
8
12
16
20
-25
0
25
50
75
100
125
150
o
TJ, JUNCTION TEMPERATURE ( C)
Qg, Charge (nC)
Figure 5. Gate Charge
Figure 6. On-Resistance vs. Junction Temperature
3
Publication Order Number:
DS-AM2325_J
Analog Power
AM2325P
Typical Electrical Characteristics
RDS(ON), ON-RESISTANCE (OHM)
0.15
10
1
T A = 125oC
0.1
o
25 C
0.01
0.001
ID=-3.6A
0.12
0.09
0.06
0.03
0
0.0001
1
0
0.2
0.4
0.6
0.8
1
2
1.2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
-V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance with Gate to Source Voltage
50
P(pk), PEAK TRANSIENT POWER (W)
1.2
-V th, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
-IS, REVERSE DRAIN CURRENT (A)
100
ID = -250µA
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
40
30
20
10
0
0.001
o
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
0.01
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Vth Gate to Source Voltage Vs Temperature
0.1
1
t1, TIME (SEC)
10
100
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
0.01
D = 0.5
R q J A(t) = r(t) + R q J A
R q J A = 125 °C /W
0.2
0.1
0.0
P (pk
0.02
0.01
t1
t2
T J - T A = P * R q J A(t)
Duty C yc le , D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIM E (s e c )
Figure 11. Transient Thermal Response Curve
4
Publication Order Number:
DS-AM2325_J
Analog Power
AM2325P
Ordering information
• AM2325P-T1-XX
–
–
–
–
–
–
A:
M:
2325:
P:
T1:
XX:
Analog Power
MOSFET
Part number
P-Channel
Tape & reel
Blank:
Standard
PF:
Lead-free
5
Publication Order Number:
DS-AM2325_J
Analog Power
AM2325P
Package Information
6
Publication Order Number:
DS-AM2325_J