Analog Power
AM1321P
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
0.079 @ VGS = -4.5V
-20
0.110 @ VGS = -2.5V
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SC70-3 saves board space
Fast switching speed
High performance trench technology
ID (A)
-1.7
-1.5
G
D
S
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
-20
Drain-Source Voltage
VDS
V
±8
VGS
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
ID
IDM
Pulsed Drain Current
a
IS
Continuous Source Current (Diode Conduction)
o
TA=25 C
a
Power Dissipation
o
TA=70 C
Operating Junction and Storage Temperature Range
PD
-1.7
-1.4
A
-2.5
±0.28
0.34
0.22
TJ, Tstg -55 to 150
A
W
o
C
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Ambient
Symbol
t <= 5 sec
Steady-State
RTHJA
Maximum
375
430
Units
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM1321_C
Analog Power
AM1321P
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
-0.4
VDS = 0 V, VGS = ±8 V
±100
VDS = -16 V, VGS = 0 V
-1
-10
o
VDS = -16 V, VGS = 0 V, TJ = 55 C
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -1.7 A
VGS = -2.5 V, ID = -1.5 A
VDS = -5 V, ID = -1.25 A
IS = -0.46 A, VGS = 0 V
V
nA
uA
-5
A
79
110
mΩ
9
-0.65
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Notes
a.
b.
c.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -10 V, VGS = -4.5 V,
ID = -1.7 A
VDD = -10 V, IL = -1 A,
VGEN = -4.5 V, RG = 6 Ω
7.2
1.7
1.5
10
9
27
11
nC
ns
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
Repetitive rating, pulse width limited by junction temperature.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential
or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer
application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products
are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal
injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall
indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an
Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM1321_C
Analog Power
AM1321P
Typical Electrical Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation
Figure 4. On-Resistance Variation with
with Temperature
Gate to Source Voltage
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 5. Transfer Characteristics
3
PRELIMINARY
Publication Order Number:
DS-AM1321_C
Analog Power
AM1321P
Typical Electrical Characteristics
Figure 7. Gate Charge Characteristic
Figure 8. Capacitance Characteristic
Figure 10. Single Pulse Maximum Power
Figure 9. Maximum Safe Operating Area
Dissipation
Normalized Thermal Transient Junction to Ambient
4
PRELIMINARY
Publication Order Number:
DS-AM1321_C
Analog Power
AM1321P
Package Information
5
PRELIMINARY
Publication Order Number:
DS-AM1321_C