MMBT3904WT1G, NPN,
SMMBT3904WT1G, NPN,
MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
General Purpose
Transistors
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NPN and PNP Silicon
COLLECTOR
3
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
1
BASE
Features
2
EMITTER
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
SC−70 (SOT−323)
CASE 419
STYLE 3
1
2
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
VCEO
Collector −Base Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
VCBO
Emitter −Base Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
VEBO
Collector Current − Continuous
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
IC
Value
Unit
Total Device Dissipation (Note 1)
@TA = 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
xx M G
G
Vdc
60
−40
1
Vdc
xx
6.0
−5.0
mAdc
200
−200
M
G
= AM for MMBT3904WT1,
SMMBT3904WT
= 2A for MMBT3906WT1,
SMMBT3906WT1
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Vdc
40
−40
Symbol
Max
Unit
PD
150
mW
RqJA
833
°C/W
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT3904WT1G,
SC−70/
SMMBT3904WT1G SOT−323
(Pb−Free)
3000 / Tape &
Reel
MMBT3906WT1G,
SMMBT3906WT1G
3000 / Tape &
Reel
SC−70/
SOT−323
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 9
1
Publication Order Number:
MMBT3904WT1/D
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
−40
−
−
60
−40
−
−
6.0
−5.0
−
−
−
−
50
−50
−
−
50
−50
40
70
100
60
30
60
80
100
60
30
−
−
300
−
−
−
−
300
−
−
−
−
−
−
0.2
0.3
−0.25
−0.4
0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = −1.0 mAdc, IB = 0)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = −10 mAdc, IE = 0)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = −10 mAdc, IC = 0)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
V(BR)CEO
Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
IBL
nAdc
ICEX
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
hFE
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
VCE(sat)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Vdc
VBE(sat)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
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2
Vdc
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Max
300
250
−
−
−
−
4.0
4.5
−
−
8.0
10.0
1.0
2.0
10
12
0.5
0.1
8.0
10
100
100
400
400
1.0
3.0
40
60
Unit
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
fT
MHz
Cobo
pF
Cibo
pF
kW
hie
X 10− 4
hre
hfe
−
mmhos
hoe
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
MMBT3906WT1, SMMBT3906WT1
NF
dB
−
−
5.0
4.0
Min
Max
Unit
35
35
ns
SWITCHING CHARACTERISTICS
Characteristic
Delay Time
Rise Time
Storage Time
Fall Time
Condition
Symbol
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc)
MMBT3904WT1, SMMBT3904WT1
(VCC = −3.0 Vdc, VBE = 0.5 Vdc)
MMBT3906WT1, SMMBT3906WT1
td
(IC = 10 mAdc, IB1 = 1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
(IC = −10 mAdc, IB1 = −1.0 mAdc)
MMBT3906WT1, SMMBT3906WT1
tr
(VCC = 3.0 Vdc, IC = 10 mAdc)
MMBT3904WT1, SMMBT3904WT1
(VCC = −3.0 Vdc, IC = −10 mAdc)
MMBT3906WT1, SMMBT3906WT1
ts
(IB1 = IB2 = 1.0 mAdc)
(IB1 = IB2 = −1.0 mAdc)
tf
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
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3
−
−
−
−
−
−
−
−
35
35
200
225
50
75
ns
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms
275
t1
DUTY CYCLE = 2%
+3 V
+10.9 V
275
10 k
10 k
0
-0.5 V
CS < 4 pF*
< 1 ns
1N916
-9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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4
CS < 4 pF*
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
500
500
IC/IB = 10
200
100
70
50
tr @ VCC = 3.0 V
30
20
40 V
10
7
5
15 V
MMBT3904WT1
td @ VOB = 0 V
1.0
5.0 7.0 10
2.0 3.0
20
50 70 100
30
100
70
50
30
20
10
7
5
2.0 V
200
MMBT3904WT1
1.0
2.0 3.0
5.0 7.0 10
20
50 70 100
30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn −On Time
Figure 4. Rise Time
500
200
500
300
200
IC/IB = 20
t′s = ts - 1/8 tf
IB1 = IB2
IC/IB = 10
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
100
70
50
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
VCC = 40 V
IC/IB = 10
300
t r, RISE TIME (ns)
TIME (ns)
300
200
IC/IB = 20
IC/IB = 10
30
20
10
7
5
2.0 3.0
5.0 7.0 10
20
50 70 100
30
IC/IB = 10
30
20
10
7
5
MMBT3904WT1
1.0
100
70
50
200
MMBT3904WT1
1.0
2.0 3.0
5.0 7.0 10
20
50 70 100
30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Storage Time
Figure 6. Fall Time
200
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
14
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
2
0
0.1
SOURCE RESISTANCE = 500 W
IC = 100 mA
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
MMBT3904WT1
4.0
10
20
40
MMBT3904WT1
0
0.1
100
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 7. Noise Figure
Figure 8. Noise Figure
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5
40
100
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
hoe, OUTPUT ADMITTANCE (m mhos)
100
MMBT3904WT1
h fe , CURRENT GAIN
200
100
70
50
MMBT3904WT1
50
20
10
5
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
10
5.0
10
10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
20
h ie , INPUT IMPEDANCE (k OHMS)
5.0
Figure 10. Output Admittance
Figure 9. Current Gain
MMBT3904WT1
10
5.0
2.0
1.0
0.5
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
7.0
MMBT3904WT1
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
Figure 11. Input Impedance
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
1000
hFE, DC CURRENT GAIN
VCE = 1 V
TJ = 150°C
25°C
-55°C
100
MMBT3904WT1
10
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
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6
1000
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
MMBT3904WT1, SMMBT3904WT1
1.0
TJ = 25°C
MMBT3904WT1
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.1
0.07
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
1.4
IC/IB = 10
IC/IB = 10
0.7
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.8
150°C
25°C
0.6
0.5
0.4
−55°C
0.3
0.2
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.1
0.2
0
0.001
0.01
0.1
0.0001
1
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.9
1.4
VCE = 1 V
1.2
1.0
−55°C
0.8
25°C
0.6
0.4
150°C
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 17. Base Emitter Voltage vs. Collector
Current
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1
1
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
TJ = 25°C
TJ = 125°C
1.0
10
MMBT3904WT1
MMBT3904WT1
qVC FOR VCE(sat)
0
CAPACITANCE (pF)
COEFFICIENT (mV/ °C)
7.0
+25°C TO +125°C
0.5
-55°C TO +25°C
-0.5
-55°C TO +25°C
-1.0
Cobo
qVB FOR VBE(sat)
-1.5
0
20
40
60
80
100
120
140
1.0
0.1
180 200
160
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
REVERSE BIAS VOLTAGE (VOLTS)
Figure 18. Temperature Coefficients
Figure 19. Capacitance
1000
1
VCE = 1 V
TA = 25°C
IC, COLLECTOR CURRENT (A)
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
Cibo
3.0
2.0
+25°C TO +125°C
-2.0
5.0
100
10
20 30 40
100 mS 10 mS
1 mS
1S
0.1
Thermal Limit
0.01
0.001
0.1
1
10
100
1000
0.1
1
10
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
Figure 21. Safe Operating Area
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8
100
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
10 k
0
CS < 4 pF*
+10.6 V
300 ns
10 < t1 < 500 ms
DUTY CYCLE = 2%
CS < 4 pF*
1N916
DUTY CYCLE = 2%
t1
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 22. Delay and Rise Time
Equivalent Test Circuit
Figure 23. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
500
500
300
200
IC/IB = 10
MMBT3906WT1
MMBT3906WT1
300
200
VCC = 40 V
IB1 = IB2
t f , FALL TIME (ns)
IC/IB = 20
TIME (ns)
100
70
50
tr @ VCC = 3.0 V
30
20
10
7
5
15 V
40 V
2.0 V
2.0 3.0
5.0 7.0 10
20
30
50 70 100
70
50
200
IC/IB = 10
30
20
10
7
5
td @ VOB = 0 V
1.0
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 24. Turn −On Time
Figure 25. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
NF, NOISE FIGURE (dB)
4.0
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
1.0
0
0.1
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
0.2
0.4
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
5.0
IC = 0.5 mA
8.0
6.0
4.0
IC = 50 mA
2.0
IC = 100 mA
MMBT3906WT1
20
40
MMBT3906WT1
0
0.1
100
0.2
0.4
1.0
2.0
4.0
10
RS, SOURCE RESISTANCE (kW)
Figure 26.
Figure 27.
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9
20
40
100
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
300
MMBT3906WT1
hfe , CURRENT GAIN
200
100
70
50
70
MMBT3906WT1
50
30
20
10
7.0
5.0
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
Figure 28. Current Gain
10
10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
MMBT3906WT1
10
h ie , INPUT IMPEDANCE (k Ω)
5.0 7.0
Figure 29. Output Admittance
20
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.5 0.7 1.0
2.0 3.0
0.3
IC, COLLECTOR CURRENT (mA)
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0
10
MMBT3906WT1
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
Figure 30. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0
10
Figure 31. Voltage Feedback Ratio
STATIC CHARACTERISTICS
1000
hFE, DC CURRENT GAIN
VCE = 1 V
TJ = 150°C
25°C
100
-55°C
MMBT3906WT1
10
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 32. DC Current Gain
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10
1000
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
MMBT3906WT1, SMMBT3906WT1
1.0
TJ = 25°C
MMBT3906WT1
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.1
0.07
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 33. Collector Saturation Region
1.4
IC/IB = 10
IC/IB = 10
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.45
150°C
0.40
0.35
25°C
0.30
0.25
−55°C
0.20
0.15
0.10
0.05
0
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.50
1.4
VCE = 1 V
1.2
1.0
−55°C
0.8
25°C
0.6
0.4
150°C
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 36. Base Emitter Voltage vs. Collector
Current
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11
1
1
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3906WT1, SMMBT3906WT1
10
1.0
MMBT3906WT1
7.0
0.5
qVC FOR VCE(sat)
+25°C TO +125°C
CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
TJ = 125°C
-55°C TO +25°C
0
-0.5
MMBT3906WT1
+25°C TO +125°C
-1.0
qVS FOR VBE(sat)
-55°C TO +25°C
5.0
Cobo
Cibo
3.0
2.0
-1.5
-2.0
0
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
1.0
0.1
180 200
160
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Temperature Coefficients
Figure 38. Capacitance
1000
1
VCE = 1 V
TA = 25°C
IC, COLLECTOR CURRENT (A)
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
0.2 0.3
100
10
100 mS 10 mS
1 mS
0.1
1S
Thermal Limit
0.01
0.001
0.1
1
10
100
1000
0.1
1
10
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 39. Current Gain Bandwidth Product
vs. Collector Current
Figure 40. Safe Operating Area
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12
100
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT3904WT1/D