MMBT5401W
High Voltage Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
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Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−150
Vdc
Collector −Base Voltage
VCBO
−160
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−500
mAdc
Collector Current − Continuous
2
EMITTER
SC−70 (SOT−323)
CASE 419
STYLE 3
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR− 5 Board (Note 2)
TA = 25°C
Derate Above 25°C
PD
400
mW
3.2
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
312
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
1. FR−5 @ 100 mm2, 0.5 oz. copper traces, still air.
2. FR− 5 = 1.0 0.75 0.062 in.
MARKING DIAGRAM
4W MG
G
1
4W
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
MMBT5401WT1G,
SC−70
NSVMMBT5401WT1G (Pb−Free)
Shipping†
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 2
1
Publication Order Number:
MMBT5401W/D
MMBT5401W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−150
−
−160
−
−5.0
−
−
−
−50
−50
50
60
50
−
240
−
−
−
−0.2
−0.5
−
−
−1.0
−1.0
100
300
−
6.0
40
200
−
8.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Collector−Base Cutoff Current
(VCB = −120 Vdc, IE = 0)
(VCB = −120 Vdc, IE = 0, TA = 100°C)
Vdc
Vdc
Vdc
ICBO
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −50 mAdc, VCE = −5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
MHz
Cobo
Small Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
Noise Figure
(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz)
NF
pF
−
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MMBT5401W
1000
hFE, CURRENT GAIN
VCE = 5 V
TJ = 150°C
TJ = 25°C
100
TJ = −55°C
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
0.5
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
Figure 2. Collector Saturation Region
103
IC, COLLECTOR CURRENT (A)
μ
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
102
VCE = 30 V
IC = ICES
101
TJ = 125°C
100
75°C
10-1
10-2
REVERSE
25°C
10-3
0.3
0.2
FORWARD
0.1
0
0.1
0.2 0.3 0.4
0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
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3
0.6
0.7
10
20
50
MMBT5401W
1.0
IC/IB = 10
0.18
IC/IB = 10
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.20
0.15
0.13 150°C
0.10
25°C
0.08
0.05 −55°C
0.03
0.8
25°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0
0.0001
0.001
0.01
0.0001
0.1
IC, COLLECTOR CURRENT (A)
θV, TEMPERATURE COEFFICIENT (mV/ °C)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 10 V
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
2.5
1.5
1.0
0.5
-0.5
-1.0
-1.5
qVB for VBE(sat)
-2.0
-2.5
0.1
0.1
qVC for VCE(sat)
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 6. Base Emitter Voltage vs. Collector
Current
100
70
50
C, CAPACITANCE (pF)
VCC
-30 V
100
10 ms
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 mF
3.0 k
RC
Vout
RB
5.1 k
Vin
100
50
100
Figure 7. Temperature Coefficients
10.2 V
Vin
0.1
TJ = - 55°C to 135°C
2.0
IC, COLLECTOR CURRENT (A)
VBB
+8.8 V
0.01
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
1.1
0.9
0.001
IC, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
−55°C
0.9
TJ = 25°C
30
Cibo
20
10
7.0
5.0
Cobo
3.0
1N914
2.0
1.0
0.2
Values Shown are for IC @ 10 mA
Figure 8. Switching Time Test Circuit
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
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4
10
20
MMBT5401W
1000
700
500
2000
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
tr @ VCC = 30 V
200
t, TIME (ns)
t, TIME (ns)
300
1000
700
500
100
70
50
td @ VBE(off) = 1.0 V
VCC = 120 V
10
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
tf @ VCC = 30 V
300
200
ts @ VCC = 120 V
30
50
100
20
0.2 0.3 0.5
200
1.0
2.0 3.0 5.0
10
20 30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn−On Time
Figure 11. Turn−Off Time
50
100
200
1
IC, COLLECTOR CURRENT (A)
1000
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
tf @ VCC = 120 V
100
70
50
30
20
IC/IB = 10
TJ = 25°C
VCE = 1 V
TA = 25°C
100
10 mSec
0.1
1 Sec
0.01
0.001
10
0.1
1
10
100
1
IC, COLLECTOR CURRENT (A)
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current Gain Bandwidth Product
Figure 13. Safe Operating Area
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5
1000
MMBT5401W
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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MMBT5401W/D