Digital Integrated Circuits

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ECE 659
Digital Integrated
Circuits
A Design Perspective
Jan M. Rabaey
Anantha Chandrakasan
Borivoje Nikolic
Introduction
July 30, 2002
EE141 Integrated Circuits2nd
© Digital
1
Introduction
What is this book all about?
‰
Introduction to digital integrated circuits.
ƒ CMOS devices and manufacturing technology.
CMOS inverters and gates. Propagation delay,
noise margins, and power dissipation. Sequential
circuits. Arithmetic, interconnect, and memories.
Programmable logic arrays. Design
methodologies.
‰
What will you learn?
ƒ Understanding, designing, and optimizing digital
circuits with respect to different quality metrics:
cost, speed, power dissipation, and reliability
EE141 Integrated Circuits2nd
© Digital
2
Introduction
1
ECE 659
Digital Integrated Circuits
Introduction: Issues in digital design
‰ The
Th CMOS iinverter
t
‰ Combinational logic structures
‰ Sequential logic gates
‰ Design methodologies
‰ Interconnect: R, L and C
‰ Timing
‰ Arithmetic building blocks
‰ Memories and array structures
‰
EE141 Integrated Circuits2nd
© Digital
3
Introduction
Introduction
‰ Why
is designing
digital ICs different
today than it was
before?
‰ Will it change in
future?
EE141 Integrated Circuits2nd
© Digital
4
Introduction
2
ECE 659
The First Computer
The Babbage
Difference Engine
(1832)
25,000 parts
cost: £17,470
EE141 Integrated Circuits2nd
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5
Introduction
ENIAC - The first electronic computer (1946)
EE141 Integrated Circuits2nd
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6
Introduction
3
ECE 659
The Transistor Revolution
First transistor
Bell Labs, 1948
7
Introduction
EE141 Integrated Circuits2nd
© Digital
The First Integrated Circuits
Bipolar
p
logic
g
1960’s
ECL 3-input Gate
Motorola 1966
EE141 Integrated Circuits2nd
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8
Introduction
4
ECE 659
Intel 4004 MicroMicro-Processor
1971
1000 transistors
1 MHz operation
EE141 Integrated Circuits2nd
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9
Introduction
Intel Pentium (IV) microprocessor
EE141 Integrated Circuits2nd
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Introduction
5
ECE 659
Moore’s Law
zIn
1965
1965, Gordon Moore noted that the
number of transistors on a chip doubled
every 18 to 24 months.
zHe made a prediction that
semiconductor technology will double its
effectiveness
ff i
every 18 months
h
11
Introduction
EE141 Integrated Circuits2nd
© Digital
1975
1974
1973
1972
1971
1970
1969
1968
1967
1966
1965
1964
1963
1962
1961
1960
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1959
LOG2 OF THE NUMBER OF
COMPO
ONENTS PER INTEGRATED FUNCTIION
Moore’s Law
Electronics, April 19, 1965.
EE141 Integrated Circuits2nd
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Introduction
6
ECE 659
Evolution in Complexity
13
Introduction
EE141 Integrated Circuits2nd
© Digital
Transistor Counts
1 Billion
Transistors
K
1,000,000
100,000
10,000
1,000
i386
80286
100
10
i486
Pentium® III
Pentium® II
Pentium® Pro
Pentium®
8086
Source: Intel
1
1975 1980 1985 1990 1995 2000 2005 2010
Projected
EE141 Integrated Circuits2nd
© Digital
Courtesy, Intel
14
Introduction
7
ECE 659
Moore’s law in Microprocessors
Transistors (MT)
1000
2X growth in 1.96 years!
100
10
486
1
P6
Pentium® proc
386
286
0.1
8086
8080
8008
4004
8085
Transistors
on Lead Microprocessors double every 2 years
0.01
0.001
1970
1980
1990
Year
2000
2010
15
Introduction
Courtesy, Intel
EE141 Integrated Circuits2nd
© Digital
Die Size Growth
Die size (mm))
100
10
8080
8008
4004
1
1970
8086
8085
1980
286
386
P6
486 Pentium ® proc
~7% growth per year
~2X growth in 10 years
1990
Year
2000
2010
Die size grows by 14% to satisfy Moore’s Law
EE141 Integrated Circuits2nd
© Digital
Courtesy, Intel
16
Introduction
8
ECE 659
Frequency
Frequency (Mh
hz)
10000
Doubles every
2 yyears
1000
100
10
8085
8086 286
386
486
P6
Pentium ® proc
8080
8008
4004
1
01
0.1
1970
1980
1990
Year
2000
2010
Lead Microprocessors frequency doubles every 2 years
17
Introduction
Courtesy, Intel
EE141 Integrated Circuits2nd
© Digital
Power Dissipation
Power (Watts
s)
100
P6
Pentium ® proc
10
8086 286
1
8008
4004
486
386
8085
8080
0.1
1971
1974
1978
1985
1992
2000
Year
Lead Microprocessors power continues to increase
EE141 Integrated Circuits2nd
© Digital
Courtesy, Intel
18
Introduction
9
ECE 659
Power will be a major problem
100000
18KW
5KW
1.5KW
500W
Power (Wattts)
10000
1000
Pentium® proc
100
286 486
8086 386
8085
8080
8008
1 4004
10
0.1
1971 1974 1978 1985 1992 2000 2004 2008
Year
Power delivery and dissipation will be prohibitive
Courtesy, Intel
EE141 Integrated Circuits2nd
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19
Introduction
Power density
Power Density (W
W/cm2)
10000
1000
100
Rocket
Nozzle
Nuclear
Reactor
8086
10 4004
Hot Plate
P6
8008 8085
Pentium® proc
386
286
486
8080
1
1970
1980
1990
2000
2010
Year
Power density too high to keep junctions at low temp
EE141 Integrated Circuits2nd
© Digital
Courtesy, Intel
20
Introduction
10
ECE 659
Not Only Microprocessors
Cell
Phone
Small
Signal RF
Digital Cellular Market
(Phones Shipped)
Power
RF
Power
Management
1996 1997 1998 1999 2000
Units
Analog
Baseband
48M 86M 162M 260M 435M
Digital Baseband
(DSP + MCU)
(data from Texas Instruments)
21
Introduction
EE141 Integrated Circuits2nd
© Digital
Challenges in Digital Design
∝ DSM
∝ 1/DSM
“Macroscopic Issues”
“Microscopic Problems”
• Time-to-Market
• Millions of Gates
• High-Level Abstractions
• Reuse & IP: Portability
• Predictability
• etc.
• Ultra-high speed design
• Interconnect
• Noise, Crosstalk
• Reliability, Manufacturability
• Power Dissipation
• Clock distribution.
distribution
Everything Looks a Little Different
?
EE141 Integrated Circuits2nd
© Digital
…and There’s a Lot of Them!
22
Introduction
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ECE 659
10,000
10,000,000
100,000
100,000,000
Logic Tr./Chip
Tr./Staff Month.
1,000
1,000,000
10,000
10,000,000
100
100,000
Productivity
Mo.
(K) Trans./Staff - M
Complexity
Logic Transistor pe
er Chip (M)
Productivity Trends
1,000
1,000,000
58%/Yr. compounded
Complexity growth rate
10
10,000
100
100,000
1,0001
10
10,000
x
0.1
100
xx
0.01
10
xx
x
x
1
1,000
21%/Yr. compound
Productivity growth rate
x
0.1
100
0.01
10
2009
2007
5
2005
2003
3
2001
1999
1997
1995
5
1993
3
1991
1989
1987
1985
5
1983
3
1981
0.001
1
Source: Sematech
Complexity outpaces design productivity
EE141 Integrated Circuits2nd
© Digital
Courtesy, ITRS Roadmap
23
Introduction
Why Scaling?
Technology shrinks by 0.7/generation
‰ With every generation can integrate 2x more
functions per chip; chip cost does not increase
significantly
‰ Cost of a function decreases by 2x
‰ But …
‰
ƒ How to design chips with more and more functions?
ƒ Design engineering population does not double every
two years…
‰
Hence, a need for more efficient design methods
ƒ Exploit different levels of abstraction
EE141 Integrated Circuits2nd
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Introduction
12
ECE 659
Design Abstraction Levels
SYSTEM
MODULE
+
GATE
CIRCUIT
DEVICE
G
S
n+
EE141 Integrated Circuits2nd
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D
n+
25
Introduction
Design Metrics
‰ How
to evaluate performance of a
digital circuit (gate,
(gate block,
block …)?
)?
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Cost
Reliability
Scalability
Speed (delay, operating frequency)
P
Power
dissipation
di i ti
Energy to perform a function
EE141 Integrated Circuits2nd
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Introduction
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ECE 659
Cost of Integrated Circuits
‰
NRE (non-recurrent engineering) costs
ƒ design time and effort, mask generation
ƒ one-time cost factor
‰
Recurrent costs
ƒ silicon processing, packaging, test
ƒ proportional to volume
ƒ proportional to chip area
EE141 Integrated Circuits2nd
© Digital
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Introduction
NRE Cost is Increasing
EE141 Integrated Circuits2nd
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Introduction
14
ECE 659
Die Cost
Single die
Wafer
Going up to 12” (30cm)
From http://www.amd.com
29
Introduction
EE141 Integrated Circuits2nd
© Digital
Cost per Transistor
cost:
¢-per
per--transistor
1
0.1
Fabrication capital cost per transistor (Moore’s law)
0.01
0.001
0.0001
0.00001
0.000001
0.0000001
1982
1985
EE141 Integrated Circuits2nd
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1988
1991
1994
1997
2000
2003
2006
2009
2012
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Introduction
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ECE 659
Yield
No. of good chips per wafer
×100%
Total number of chips per wafer
Wafer cost
Die cost =
Dies per wafer × Die yield
Y=
Dies per wafer =
π × (wafer diameter/2)2 π × wafer diameter
−
die area
2 × die area
31
Introduction
EE141 Integrated Circuits2nd
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Defects
⎛ defects per unit area × die area ⎞
die yield = ⎜1 +
⎟
α
⎝
⎠
−α
α is approximately 3
die cost = f (die area)4
EE141 Integrated Circuits2nd
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32
Introduction
16
ECE 659
Some Examples (1994)
Chip
Metal Line
layers width
Wafer
cost
Def./ Area Dies/ Yield
cm2 mm2 wafer
Die
cost
386DX
2
0.90
$900
1.0
43
360
71%
$4
486 DX2
3
0.80
$1200
1.0
81
181
54%
$12
Power PC
601
4
0.80
$1700
1.3
121
115
28%
$53
HP PA 7100
3
0.80
$1300
1.0
196
66
27%
$73
DEC Alpha
3
0 70
0.70
$1500
12
1.2
234
53
19%
$149
Super Sparc
3
0.70
$1700
1.6
256
48
13%
$272
Pentium
3
0.80
$1500
1.5
296
40
9%
$417
33
Introduction
EE141 Integrated Circuits2nd
© Digital
Reliability―
Noise in Digital Integrated Circuits
v(t)
i(t)
Inductive coupling
p g
EE141 Integrated Circuits2nd
© Digital
Capacitive
p
coupling
p g
V DD
Power and g
ground
noise
34
Introduction
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ECE 659
DC Operation
Voltage Transfer Characteristic
V(y)
V
VOH = f(VOL)
VOL = f(VOH)
VM = f(VM)
f
OH
V(y)=V(x)
VM Switching Threshold
V OL
V OL
V
V(x)
OH
Nominal Voltage Levels
35
Introduction
EE141 Integrated Circuits2nd
© Digital
Mapping between analog and digital signals
V
“ 1”
V
OH
V
IH
V
out
OH
Slope = -1
1
Undefined
Region
V
“ 0”
V
Slope
p = -1
IL
V
OL
OL
V
EE141 Integrated Circuits2nd
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IL
V
IH
V
in
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Introduction
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ECE 659
Definition of Noise Margins
"1"
V
OH
V
OL
NM H
NM L
V
Noise margin high
IH
V
Undefined
Region
IL
Noise margin low
"0"
Gate Output
Gate Input
EE141 Integrated Circuits2nd
© Digital
37
Introduction
Noise Budget
‰ Allocates
gross noise margin to
expected sources of noise
‰ Sources: supply noise, cross talk,
interference, offset
‰ Differentiate between fixed and
proportional
ti
l noise
i sources
EE141 Integrated Circuits2nd
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Introduction
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ECE 659
Key Reliability Properties
‰
Absolute noise margin values are deceptive
ƒ a floating node is more easily disturbed than a
node driven by a low impedance (in terms of
voltage)
‰
Noise immunity is the more important metric –
the capability to suppress noise sources
‰ Key metrics: Noise transfer functions
functions, Output
impedance of the driver and input impedance of the
receiver;
39
Introduction
EE141 Integrated Circuits2nd
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Regenerative Property
out
out
v3
v3
f (v)
v1
fin v(v)
v1
v3
fin v(v)
v2
v0
Regenerative
EE141 Integrated Circuits2nd
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in
f (v)
v0
v2
in
Non-Regenerative
40
Introduction
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ECE 659
Regenerative Property
v0
v1
v2
v3
v4
v5
v6
A chain of inverters
V (Volt)
5
v0
3
v1
1
Simulated response
21
0
2
v2
4
6
8
10
t (nsec)
41
Introduction
EE141 Integrated Circuits2nd
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Fan--in and Fan
Fan
Fan--out
N
Fan-out N
EE141 Integrated Circuits2nd
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M
Fan-in M
42
Introduction
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ECE 659
The Ideal Gate
V out
Ri = ∞
Ro = 0
Fanout = ∞
NMH = NML = VDD/2
g=∞
V in
43
Introduction
EE141 Integrated Circuits2nd
© Digital
An Old
Old--time Inverter
5.0
4.0
NM L
3.0
(V)
2.0
out
V
VM
NM H
10
1.0
0.0
EE141 Integrated Circuits2nd
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1.0
2.0
3.0
V in (V)
4.0
5.0
44
Introduction
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ECE 659
Delay Definitions
V in
50%
t
tpHL
V out
tpLH
90%
50%
t
10%
tf
tr
45
Introduction
EE141 Integrated Circuits2nd
© Digital
Ring Oscillator
v0
v1
v0
v2
v1
v3
v4
v5
v5
T = 2 × tp × N
EE141 Integrated Circuits2nd
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Introduction
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ECE 659
A FirstFirst-Order RC Network
R
vin
vout
C
tp = ln (2) τ = 0.69 RC
Important model – matches delay of inverter
47
Introduction
EE141 Integrated Circuits2nd
© Digital
Power Dissipation
Instantaneous power:
p(t) = v(t)i(t) = Vsupplyi(t)
Peak power:
Ppeak = Vsupplyipeak
Average power:
Pave =
EE141 Integrated Circuits2nd
© Digital
Vsupply t +T
1 t +T
p
(
t
)
dt
=
isupply (t )dt
T ∫t
T ∫t
48
Introduction
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ECE 659
Energy and EnergyEnergy-Delay
Power-Delay
owe De ay Product
oduct (PDP)
( D )=
E = Energy per operation = Pav × tp
Energy-Delay Product (EDP) =
quality
li metric
i off gate = E × tp
49
Introduction
EE141 Integrated Circuits2nd
© Digital
A FirstFirst-Order RC Network
R
vin
E0
vout
CL
Vdd
T
T
2
P
t
dt
V
i
t
dt
V
=
=
=
(
)
(
)
∫
dd ∫ sup ply
l
dd ∫ CL dV out = C L • V dd
→1
0
0
0
T
T
Vdd
1
2
E ca p = ∫ P cap ( t ) dt = ∫ V out i ca p( t )dt = ∫ C L Vout dVout = --- C • V dd
2 L
0
0
0
EE141 Integrated Circuits2nd
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Introduction
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ECE 659
Summary
Digital integrated circuits have come a long
way and still have quite some potential left for
th coming
the
i d
decades
d
‰ Some interesting challenges ahead
‰
ƒ Getting a clear perspective on the challenges and
potential solutions is the purpose of this book
‰
Understanding the design metrics that govern
digital design is crucial
ƒ Cost, reliability, speed, power and energy
dissipation
EE141 Integrated Circuits2nd
© Digital
51
Introduction
26
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