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SEMICONDUCTOR TECHNICAL DATA
Silicon Programmable Unijunction Transistors
. . . designed to enable the engineer to “program” unijunction characteristics such as
RBB, η, IV, and IP by merely selecting two resistor values. Application includes
thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be used
in special thyristor applications due to the availability of an anode gate. Supplied in an
inexpensive TO-92 plastic package for high-volume requirements, this package is
readily adaptable for use in automatic insertion equipment.
•
•
•
•
•
Programmable — RBB, η, IV and IP.
Low On-State Voltage — 1.5 Volts Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current — 10 nA Maximum
High Peak Output Voltage — 11 Volts Typical
Low Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms)
PUTs
40 VOLTS
300 mW
G
A
K
A
GK
CASE 29-04
(TO-226AA)
STYLE 16
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Value
Unit
PF
1/θJA
300
4
mW
mW/°C
*DC Forward Anode Current
Derate Above 25°C
IT
150
2.67
mA
mA/°C
*DC Gate Current
IG
±50
mA
*Power Dissipation
Derate Above 25°C
Repetitive Peak Forward Current
100 µs Pulse Width, 1% Duty Cycle
*20 µs Pulse Width, 1% Duty Cycle
ITRM
Non-repetitive Peak Forward Current
10 µs Pulse Width
ITSM
5
Amps
*Gate to Cathode Forward Voltage
VGKF
40
Volts
*Gate to Cathode Reverse Voltage
VGKR
–5
Volts
*Gate to Anode Reverse Voltage
VGAR
40
Volts
VAK
±40
Volts
TJ
–50 to +100
°C
Tstg
–55 to +150
°C
*Anode to Cathode Voltage(1)
Operating Junction Temperature Range
*Storage Temperature Range
Amps
1
2
*Indicates JEDEC Registered Data
1. Anode positive, RGA = 1000 ohms
Anode negative, RGA = open
Thyristor
Device Data
Motorola
Motorola, Inc.
1995
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
*Peak Current
(VS = 10 Vdc, RG = 1 MΩ)
Fig. No.
Symbol
2,9,11
IP
Min
Typ
Max
—
—
—
—
1.25
0.08
4
0.70
2
0.15
5
1
0.2
0.2
0.2
0.70
0.50
0.35
1.6
0.6
0.6
—
—
70
25
1.5
1
18
18
150
150
—
—
50
25
—
—
—
—
—
—
1
3
10
—
µA
2N6027
2N6028
2N6027
2N6028
(VS = 10 Vdc, RG = 10 k ohms)
*Offset Voltage
(VS = 10 Vdc, RG = 1 MΩ)
1
VT
Volts
2N6027
2N6028
(Both Types)
(VS = 10 Vdc, RG = 10 k ohms)
*Valley Current
(VS = 10 Vdc, RG = 1 MΩ)
1,4,5
µA
IV
2N6027
2N6028
2N6027
2N6028
2N6027
2N6028
(VS = 10 Vdc, RG = 10 k ohms)
(VS = 10 Vdc, RG = 200 ohms)
Unit
mA
*Gate to Anode Leakage Current
(VS = 40 Vdc, TA = 25°C, Cathode Open)
(VS = 40 Vdc, TA = 75°C, Cathode Open)
—
IGAO
nAdc
Gate to Cathode Leakage Current
(VS = 40 Vdc, Anode to Cathode Shorted)
—
IGKS
—
5
50
nAdc
*Forward Voltage (IF = 50 mA Peak)
1,6
VF
—
0.8
1.5
Volts
*Peak Output Voltage
(VG = 20 Vdc, CC = 0.2 µF)
3,7
Vo
6
11
—
Volt
Pulse Voltage Rise Time
(VB = 20 Vdc, CC = 0.2 µF)
3
tr
—
40
80
ns
*Indicates JEDEC Registered Data.
FIGURE 1 – ELECTRICAL CHARACTERIZATION
IA
+VB
IA
A
RG
R2
* VS + R1 R1
) R2 VB
G
VAK
R1
+
VAK
+ R1R1)R2R2
VA
– VP
VS
RG
VT = VP – VS
VS
K
VF
VV
FIGURE 2 – PEAK CURRENT (IP) TEST CIRCUIT
Adjust
for
Turn-on
Threshold
100k
1.0%
VB
0.01 µF
Scope
20
2
Put
Under
Test
IV
IF
IA
IC – Electrical Characteristics
FIGURE 3 – Vo AND tr TEST CIRCUIT
+VB
—
IP (SENSE)
100 µV = 1.0 nA
+
2N5270
IP
IGAO
1B – Equivalent Test Circuit for
Figure 1A used for electrical
characteristics testing
(also see Figure 2)
1A – Programmable Unijunction
with “Program” Resistors
R1 and R2
+V
510 k
16 k
Vo
6V
R
RG = R/2
CC
VS = VB/2
(See Figure 1)
vo
20 Ω
27 k
0.6 V
tr
t
R
Motorola Thyristor Device Data
TYPICAL VALLEY CURRENT BEHAVIOR
FIGURE 4 – EFFECT OF SUPPLY VOLTAGE
FIGURE 5 – EFFECT OF TEMPERATURE
500
I V , VALLEY CURRENT (µ A)
IV , VALLEY CURRENT (µ A)
1000
RG = 10 kΩ
100
100 kΩ
1 MΩ
RG = 10 kΩ
100
100 kΩ
1 MΩ
10
10
5
10
15
VS, SUPPLY VOLTAGE (VOLTS)
5
20
–50
FIGURE 6 – FORWARD VOLTAGE
V o , PEAK OUTPUT VOLTAGE (VOLTS)
V F , PEAK FORWARD VOLTAGE (VOLTS)
25
TA = 25°C
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.02
0.05 0.1
0.2
0.5
1.0
IF, PEAK FORWARD CURRENT (AMP)
+100
0
+25
+50
+75
TA, AMBIENT TEMPERATURE (°C)
FIGURE 7 – PEAK OUTPUT VOLTAGE
10
5.0
–25
2.0
CC = 0.2 µF
TA = 25°C
(SEE FIGURE 3)
20
15
10
1000 pF
5.0
0
5.0
0
5.0
10
15
20
25
30
VS, SUPPLY VOLTAGE (VOLTS)
35
40
FIGURE 8
PROGRAMMABLE UNIJUNCTION
A
E
Circuit Symbol
Motorola Thyristor Device Data
RT
R2
P
N
P
N
G
K
+
B2
A
+ R1 ) R2
+ R1 R1
) R2
R BB
G
η
R1
R2
A
G
R1
CC
K
K
B1
Equivalent Circuit
with External “Program”
Resistors R1 and R2
Typical Application
3
TYPICAL PEAK CURRENT BEHAVIOR
2N6027
FIGURE 9 – EFFECT OF SUPPLY VOLTAGE AND RG
FIGURE 10 – EFFECT OF TEMPERATURE AND RG
100
10
50
I P , PEAK CURRENT (µ A)
I P , PEAK CURRENT ( µA)
5.0
3.0
2.0
1.0
RG = 10 kΩ
0.5
100 kΩ
0.3
1.0 MΩ
0.2
TA = 25°C
(SEE FIGURE 2)
20
VS = 10 VOLTS
(SEE FIGURE 2)
10
5.0
2.0
1.0
RG = 10 kΩ
0.5
100 kΩ
1.0 MΩ
0.2
0.1
5.0
10
15
VS, SUPPLY VOLTAGE (VOLTS)
0.1
–50
20
–25
0
+25
+50
TA, AMBIENT TEMPERATURE (°C)
+75
+100
2N6028
FIGURE 12 – EFFECT OF TEMPERATURE AND RG
1.0
10
0.7
0.5
50
RG = 10 kΩ
100 kΩ
0.3
0.2
I P , PEAK CURRENT (µ A)
I P , PEAK CURRENT (µ A)
FIGURE 11 – EFFECT OF SUPPLY VOLTAGE AND RG
0.1
0.07
0.05
1.0 MΩ
0.03
TA = 25°C
(SEE FIGURE 2)
0.02
4
10
15
VS, SUPPLY VOLTAGE (VOLTS)
1.0
0.5
0.2
RG = 10 kΩ
0.1
100 kΩ
0.05
1.0 MΩ
0.02
0.01
5.0
VS = 10 VOLTS
(SEE FIGURE 2)
2.0
20
0.01
–50
–25
0
+25
+50
TA, AMBIENT TEMPERATURE (°C)
+75
+100
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
A
B
R
STYLE 16:
PIN 1.
2.
3.
3.
P
L
F
SEATING
PLANE
K
ANODE
GATE
CATHODE
SOURCE
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
CASE 029–04
(TO–226AA)
Motorola Thyristor Device Data
5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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6
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*2N6027/D*
2N6027/D
Motorola Thyristor Device Data