RSQ020N03
Nch 30V 2A Power MOSFET
Datasheet
lOutline
VDSS
30V
RDS(on) (Max.)
134mW
ID
2.0A
PD
1.25W
lFeatures
(6)
(5)
TSMT6
SOT-457T
(4)
(1)
(2)
(3)
lInner circuit
1) Low on - resistance.
(1)
(2)
(3)
(4)
(5)
(6)
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
Drain
Drain
Gate
Source
Drain
Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
DC/DC converters
Type
180
Tape width (mm)
Basic ordering unit (pcs)
8
3,000
Taping code
TR
Marking
QQ
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30
V
Continuous drain current
ID *1
2.0
A
ID,pulse *2
8.0
A
VGSS
20
V
PD *3
1.25
W
PD *4
0.6
W
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
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© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.11 - Rev.B
Data Sheet
RSQ020N03
lThermal resistance
Parameter
Symbol
Thermal resistance, junction - ambient
Values
Unit
Min.
Typ.
Max.
RthJA *3
-
-
100
°C/W
RthJA *4
-
-
208
°C/W
lElectrical characteristics(Ta = 25°C) ,unless otherwise specified
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Symbol
V(BR)DSS
Conditions
VGS = 0V, ID = 1mA
ΔV(BR)DSS ID=1mA
ΔTj
referenced to 25°C
Values
Unit
Min.
Typ.
Max.
30
-
-
V
-
26
-
mV/°C
Zero gate voltage drain current
IDSS
VDS = 30V, VGS = 0V
-
-
1
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
10
mA
Gate threshold voltage
VGS (th)
VDS = 10V, ID = 1mA
1.0
-
2.5
V
Gate threshold voltage
temperature coefficient
ΔV(GS)th
ΔTj
ID=1mA
referenced to 25°C
-
-2.8
-
mV/°C
VGS=10V, ID=2.0A
-
96
134
VGS=4.5V, ID=2.0A
-
148
207
VGS=4.0V, ID=2.0A
-
168
235
VGS=10V, ID=2.0A, Tj=125°C
-
155
220
f = 1MHz, open drain
-
9.5
-
W
1.5
3.0
-
S
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
RDS(on)
RG
gfs *5
*5
VDS=10V, ID=2.0A
mW
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.11 - Rev.B
Data Sheet
RSQ020N03
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
110
-
Output capacitance
Coss
VDS = 10V
-
40
-
Reverse transfer capacitance
Crss
f = 1MHz
-
22
-
VDD ⋍ 15V, VGS = 10V
-
7
-
ID = 1.0A
-
9
-
RL = 15.0W
-
16
-
RG = 10W
-
4
-
Turn - on delay time
td(on) *5
tr *5
Rise time
Turn - off delay time
td(off) *5
tf *5
Fall time
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Total gate charge
Symbol
Qg *5
Gate - Source charge
Qgs *5
Gate - Drain charge
Qgd *5
Conditions
Values
Min.
Typ.
Max.
VDD ⋍ 15V, ID=2.0A
VGS = 5V
-
2.2
3.1
VDD ⋍ 15V, ID=2.0A
VGS = 10V
-
4.5
-
-
0.7
-
-
0.6
-
VDD ⋍ 15V, ID=2.0A
VGS = 5V
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage
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Symbol
IS *1
VSD *5
Conditions
Values
Unit
Min.
Typ.
Max.
Ta = 25°C
-
-
1
A
VGS = 0V, Is = 1.0A
-
-
1.2
V
3/11
2012.11 - Rev.B
Data Sheet
RSQ020N03
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
Operation in this area
is limited by RDS(on)
(VGS = 10V)
100
80
60
40
20
0
0
50
100
150
1
PW = 10ms
0.1
0.01
200
PW = 1ms
DC Operation
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.1
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
10
1000
Ta=25ºC
Single Pulse
Ta=25ºC
Single Pulse
1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single
0.1
0.01
0.001
0.0001
Rth(ch-a)=100ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.01
1
100
10
1
0.0001
100
Pulse Width : PW [s]
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100
Fig.4 Single Pulse Maximum
Power dissipation
Peak Transient Power : P(W)
10
1
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Normalized Transient Thermal Resistance : r(t)
PW = 100ms
10
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
120
0.01
1
100
Pulse Width : PW [s]
4/11
2012.11 - Rev.B
Data Sheet
RSQ020N03
lElectrical characteristic curves
Fig.6 Typical Output Characteristics(II)
Fig.5 Typical Output Characteristics(I)
2
Ta=25ºC
Pulsed
1.8
VGS= 10.0V
1.6
VGS= 4.5V
1.6
1.4
VGS= 4.0V
1.4
VGS= 2.8V
1.2
1
VGS= 2.5V
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
0.8
VGS= 4.5V
VGS= 4.0V
1.2
1
0.8
VGS= 2.5V
0.6
0.4
0
1.0
VGS= 2.0V
0.0
2.0
4.0
6.0
8.0
10.0
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.8 Typical Transfer Characteristics
Fig.7 Breakdown Voltage
vs. Junction Temperature
60
VGS = 0V
ID = 1mA
Pulsed
40
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
VGS= 10.0V
0.2
VGS= 2.0V
0.0
Ta=25ºC
Pulsed
1.8
Drain Current : ID [A]
Drain Current : ID [A]
2
20
0
-50
0
50
100
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
Gate - Source Voltage : VGS [V]
5/11
2012.11 - Rev.B
Data Sheet
RSQ020N03
lElectrical characteristic curves
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Fig.10 Transconductance vs. Drain Current
10
VDS= 10V
Pulsed
VDS = 10V
ID = 1mA
Pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
3
2
1
0
-50
0
50
100
1
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
0.01
150
Junction Temperature : Tj [°C]
0.1
1
10
Drain Current : ID [A]
Fig.11 Drain CurrentDerating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Drain Current Dissipation
: ID/ID max. (%)
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
125
150
Static Drain - Source On-State Resistance
: RDS(on) [mW]
1.2
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
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© 2012 ROHM Co., Ltd. All rights reserved.
6/11
2012.11 - Rev.B
Data Sheet
RSQ020N03
lElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
180
Drain Current : ID [A]
160
140
120
100
80
60
40
VGS = 10V
ID = 2.0A
Pulsed
20
0
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
Drain Current : ID [A]
7/11
2012.11 - Rev.B
Data Sheet
RSQ020N03
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.20 Dynamic Input Characteristics
Switching Time : t [ns]
Gate - Source Voltage : VGS [V]
Fig.19 Switching Characteristics
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
Total Gate Charge : Qg [nC]
8/11
2012.11 - Rev.B
Data Sheet
RSQ020N03
lElectrical characteristic curves
Source Current : IS [A]
Fig.21 Source Current
vs. Source Drain Voltage
Source-Drain Voltage : VSD [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
9/11
2012.11 - Rev.B
Data Sheet
RSQ020N03
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
10/11
2012.11 - Rev.B
Data Sheet
RSQ020N03
lDimensions (Unit : mm)
D
A
e
TSMT6
c
L1
Lp
HE
E
Q
b
x
S A
A3
e1
l1
A1
y S
A
A2
e
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
A2
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
1.00
0.00
0.10
0.75
0.95
0.25
0.35
0.50
0.10
0.26
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.05
0.25
0.20
0.10
INCHES
MIN
0.000
0.030
MAX
0.039
0.004
0.037
0.010
0.014
0.004
0.110
0.059
0.020
0.010
0.118
0.071
0.037
0.102
0.012
0.016
0.002
-
MILIMETERS
MIN
MAX
0.70
2.10
0.90
0.118
0.024
0.028
0.010
0.008
0.004
INCHES
MIN
-
MAX
0.028
0.083
-
0.035
Dimension in mm / inches
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© 2012 ROHM Co., Ltd. All rights reserved.
11/11
2012.11 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
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you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
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R1102A