Nanotechnology in NEC FRL Jun’ichi Sone Fundamental Research Labs NEC Corporation Expectation of Nanotechnology Miniaturization of Semiconductor Devices Molecular Engineering Atom Molecular Manipulation DNA-Protein Manipulation Expectation of new technology domain and new market Mechanics Chemistry Fuel Cell Mechanically Strong Material Nanotechnology Molecular Carbon Nanotube Electronics NEMS Quantum Nanobio Devices Devices Life science Electronics Nanotechnology Vision Interdisciplinary New Devices CNT (carbon nanotube) Nanotube Electron Devices 2010 Nanotechnology Basic technology Nano-bio Devices 3D Nanostructure Fabrication Fuel Cell タンパク質 DNA 制御電極 2000 Quantum Computer Nano Pattern Fabrication Field Emission Display Quantum bit Devices Nano Material Characterization 8nm S Device Physics Next generation lithography (70~100nm) Next generation SOC Devices D G Terabit Memory Atom Switch (70~100nm) 50nm 100nm Roadmap Technology 30nm Semiconductor Breakthrough Devices NEMS Electron Devices 3. Pursuing of semiconductor miniaturization limit and exploring breakthrough devices Nanofabrication technology Pursuit of miniaturization limit in Si MOSFET operation Quantum bit devices for Q-computing 1. Roadmap for Si-LSIs Gate length reduction to realize higher Performance in MOSFET ~100nm technology(ASUKA Pj) Leading edge of R & D 8nm MOSFET demonstration Issues Nanofabrication technology Quantum Effect Increase of leakage current due to tunneling current Updated version of ITRS2000 MPU gate length (nm) Current development phase 100 10 1990 2000 2010 YEAR 2020 Nanofabrication technology The world smallest 10nm pattern using originally developed high-resolution resist. CH3 [ CH2 ]6 OCOCH3 4-methyl-1-acetoxy calixarene (MC6AOAc) 10nm-width resist pattern exposed by electron beam Exploring miniaturelized Si-MOSFET operation limit Demonstration of 8-nm-gate MOSFET operation DRAIN CURRENT (µA) 8 6 VLG = from - 0.3 V to 0.9 V in 0.1 V steps VUG = 13 V T = 300 K LLG = 8 nm 4 2 0 0 0.5 1 DRAIN VOLTAGE (V) I-V characteristics (room temperature) SEM image of an 8-nm gate region Metallic Single Electron Devices Gate island drain Drain Current (nA) Si substrate source 0.15 Al/AlOx/Al tunnel junctions T=4.2 K V=2 mV 0.10 0.05 0.00 -4 -2 0 2 4 Gate Volatage (V) Schematic view of a single electron device Gate control characteristics Ultra-low power device enabling 1-bit operation by a single electron (5~6 orders of magnitude lower energy consumption compared to MOSFETs) Demonstration of RT operation in single electron devices with islands of sub-10nm Quantum Computing Superposition ? 1 Observation 1 P= 2 1> 0 0> + 1> Single quantum bit 1 P= 2 0> Q-Computing C-Computing 2N states can be represented by N q-bits (36 billion by N=60) Operation by keeping wave-function nature (Super parallel) Issues: Integration, Long life of quantum bit states Quantum bit device Utilizing quantum mechanical principle to revolutionize the concept of computing The first solid state qubit demonstrated (1999 Nishina Award) Riken Project funding (starting October, 2001) SQUID Single Cooper-pair Box 1mm Gate Possible high-speed computing applications Decoding (factoring), Date search, NP complete problems (?) Next steps: Multi-qubit operation, scaling Increase possible # of elementary gate operation (Q > 103) Carbon Nanotube(CNT) New Applications Features of CNT Applications Fuel Cell for Mobile Application Field Emission Display Application 2002 Benjamin Franklin Medal to Dr.S.Iijima for the discovery of carbon nanotube and the contribution to the progress of nanotechnology Carbon nanotube Dr.Sumio Iijima Benjamin Franklin Medal Physics Award January 2002 Features of Carbon nanotube Electrical properties Metalic or Semiconducting conduction depending on chiralities Appearance of Quantum Effect due to 1-d structure Highly-Effective Electron Emission Metal Transistor, Wiring,FED Semiconductor Chemical: Adsorption, Storage, Catalysts Chemical modification, Composites Mechanical: Super strong structure Due to C-C bonds Fuel cells Sensors Composite materials Application of Carbon Nanotube Electronics Transistor, Sensor, Interconnection, Quantum bit Electron Emission Flat Panel Display Microwave Tube Energy Fuel Cell, Gas Storage Lithium Ion Battery, Super Capacitor Carbon Nanotube Chemistry Adsorption Material Sensor, Catalyst Nanotechnology AFM, STM Manipulation Nanomachine Composite Material Electrical conducting Plastics Reinforced Material Single Wall Carbon Nanohorns SW Carbon Nanohorn aggregates Single wall carbon nanohorns Iijima, S. et al. Chem. Phys. Lett. 309, 165 (1999). Mobile Fuel Cells using Carbon Nanohorns Ultra-High Electrical Energy Capacity 10 times higher than Li battery Nano-structure suitable for supporting catalyst CNH Fuel Cartridge Pt catalyst Fuel CH3OH CH 3OH CO2 H+ H+ O22 O e Polymer air H2O Cell film e TEM images of CNH e Mobile Fuel Cell Principle of a Fuel Cell 20% increase in output electrical energy by using carbon nanohorn Comparison of Fuel Cell Output Cell voltage (mV) 1000 RT H2/O2 Cell at RT 800 600 Nanohorn SWNH 400 Furnace black Convention 200 al carbon material 0 0 100 200 2 Current density (mA/cm ) 300 20% increase of current density by using carbon nanohorn electrodes TEM images of Nanohorn with Pt catalyst Carbon nanohorn Conventional carbon material (acetylene black) ※ Black particles : Pt catalyst ・ Finer Pt catalyst is dispersed homogeneously on the surface of carbon nanohorns ・ Finer particles have better catalyst capability Prototype of carbon-nanohorn fuel cell JST, Sansouken, NEC 6. Exploring Interdisciplinary New Devices Nanobio devices “Fusion of electronics and biotechnology” NEMS devices “Fusion of electronics and mechanics Nanobio devices Protein DNA 制御電極 Control electrode Schematics of NEMS nanobio devices High-precision separation : Artificial gel Fabrication of three-dimensional nanostructures Focused-ion-beam chemical-vapor-deposition Demonstration of three-dimensional nanostructure fabrication (collaborated with Himeji Inst. Technol. & SII Inc.:Nikkei BP award) 3-D nanostructure fabrication By FIB-CVD 2.75mm Nano wineglass made of Diamond-like-Carbon Nano-coil Nanobio devices, NEMS(nano-scale electro-mechanical sysytem), Electro-mechanical switches Beam fabrication Top down 2.75mm FIB excited chemical reaction (3-dimensional nanostructure) EB lithography with calix-arene resist (2-dimensional nanopattern) New market, New industry Nanotechnology Self assembled organic membrane Fine particle C60 Bottom up Self assembled DNA Chemical reaction Chemical modification Carbon nanotube (Diameter ~1nm Smoothness in atomic level)