Dr. Sone

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Nanotechnology
in NEC FRL
Jun’ichi Sone
Fundamental Research Labs
NEC Corporation
Expectation of Nanotechnology
Miniaturization of Semiconductor Devices Molecular Engineering
Atom Molecular Manipulation
DNA-Protein Manipulation
Expectation of new technology domain and new market
Mechanics
Chemistry
Fuel Cell
Mechanically
Strong Material
Nanotechnology
Molecular Carbon Nanotube
Electronics
NEMS
Quantum
Nanobio
Devices
Devices
Life
science
Electronics
Nanotechnology Vision
Interdisciplinary
New Devices
CNT (carbon nanotube)
Nanotube
Electron Devices
2010
Nanotechnology
Basic technology
Nano-bio
Devices
3D Nanostructure
Fabrication
Fuel Cell
タンパク質
DNA
制御電極
2000
Quantum
Computer
Nano Pattern
Fabrication
Field Emission
Display
Quantum
bit Devices
Nano Material
Characterization
8nm
S
Device Physics
Next generation
lithography
(70~100nm) Next generation SOC Devices
D
G
Terabit
Memory
Atom
Switch
(70~100nm)
50nm
100nm
Roadmap Technology
30nm
Semiconductor
Breakthrough Devices
NEMS
Electron
Devices
3. Pursuing of semiconductor
miniaturization limit and
exploring breakthrough devices
Nanofabrication technology
Pursuit of miniaturization limit in Si MOSFET operation
Quantum bit devices for Q-computing
1. Roadmap for Si-LSIs
Gate length reduction to realize higher
Performance in MOSFET
~100nm technology(ASUKA Pj)
Leading edge of R & D
8nm MOSFET demonstration
Issues
Nanofabrication technology
Quantum Effect
Increase of leakage current
due to tunneling current
Updated version of ITRS2000
MPU gate length (nm)
Current development phase
100
10
1990
2000
2010
YEAR
2020
Nanofabrication technology
The world smallest 10nm pattern using originally developed
high-resolution resist.
CH3
[
CH2
]6
OCOCH3
4-methyl-1-acetoxy
calixarene
(MC6AOAc)
10nm-width resist pattern
exposed by electron beam
Exploring miniaturelized Si-MOSFET operation limit
Demonstration of 8-nm-gate MOSFET operation
DRAIN CURRENT (µA)
8
6
VLG = from - 0.3 V to 0.9 V
in 0.1 V steps
VUG = 13 V
T = 300 K
LLG = 8 nm
4
2
0
0
0.5
1
DRAIN VOLTAGE (V)
I-V characteristics (room temperature)
SEM image
of an 8-nm gate region
Metallic Single Electron Devices
Gate
island
drain
Drain Current (nA)
Si substrate
source
0.15
Al/AlOx/Al
tunnel junctions
T=4.2 K
V=2 mV
0.10
0.05
0.00
-4
-2
0
2
4
Gate Volatage (V)
Schematic view of a single electron device
Gate control characteristics
Ultra-low power device enabling 1-bit operation by a single electron
(5~6 orders of magnitude lower energy consumption compared to MOSFETs)
Demonstration of RT operation in single electron devices with
islands of sub-10nm
Quantum Computing
Superposition
?
1
Observation
1
P= 2
1>
0
0> + 1>
Single quantum bit
1
P= 2
0>
Q-Computing
C-Computing
2N states can be represented by N q-bits (36 billion by N=60)
Operation by keeping wave-function nature (Super parallel)
Issues: Integration, Long life of quantum bit states
Quantum bit device
Utilizing quantum mechanical principle to
revolutionize the concept of computing
 The first solid state qubit demonstrated (1999 Nishina Award)
 Riken Project funding (starting October, 2001)
SQUID
Single Cooper-pair Box
1mm
Gate
Possible high-speed computing
applications
Decoding (factoring),
Date search,
NP complete problems (?)
Next steps:
 Multi-qubit operation, scaling
 Increase possible # of elementary gate operation (Q > 103)
Carbon Nanotube(CNT)
New Applications
Features of CNT
Applications
Fuel Cell for Mobile Application
Field Emission Display Application
2002 Benjamin Franklin Medal to Dr.S.Iijima
for the discovery of carbon nanotube and the contribution
to the progress of nanotechnology
Carbon
nanotube
Dr.Sumio Iijima
Benjamin Franklin Medal
Physics Award
January 2002
Features of Carbon nanotube
Electrical properties
Metalic or Semiconducting conduction
depending on chiralities
Appearance of Quantum Effect due to 1-d structure
Highly-Effective Electron Emission
Metal
Transistor,
Wiring,FED
Semiconductor
Chemical:
Adsorption, Storage, Catalysts
Chemical modification, Composites
Mechanical:
Super strong structure
Due to C-C bonds
Fuel cells
Sensors
Composite materials
Application of Carbon Nanotube
Electronics
Transistor, Sensor,
Interconnection,
Quantum bit
Electron
Emission
Flat Panel Display
Microwave Tube
Energy
Fuel Cell, Gas Storage
Lithium Ion Battery,
Super Capacitor
Carbon
Nanotube
Chemistry
Adsorption Material
Sensor, Catalyst
Nanotechnology
AFM, STM
Manipulation
Nanomachine
Composite
Material
Electrical conducting Plastics
Reinforced Material
Single Wall Carbon Nanohorns
SW Carbon Nanohorn aggregates
Single wall
carbon
nanohorns
Iijima, S. et al. Chem. Phys. Lett. 309, 165 (1999).
Mobile Fuel Cells using Carbon Nanohorns
Ultra-High Electrical Energy Capacity
10 times higher than Li battery
Nano-structure suitable
for supporting catalyst
CNH
Fuel Cartridge
Pt catalyst
Fuel
CH3OH
CH 3OH
CO2
H+
H+
O22
O
e Polymer
air
H2O
Cell
film
e
TEM images of CNH
e
Mobile Fuel Cell
Principle of a Fuel Cell
20% increase in output electrical energy by using carbon nanohorn
Comparison of Fuel Cell Output
Cell voltage (mV)
1000
RT
H2/O2 Cell at RT
800
600
Nanohorn
SWNH
400
Furnace
black
Convention
200
al carbon
material
0
0
100
200 2
Current density (mA/cm
)
300
20% increase of current density
by using carbon nanohorn electrodes
TEM images of Nanohorn with Pt catalyst
Carbon nanohorn
Conventional carbon material
(acetylene black)
※ Black particles : Pt catalyst
・ Finer Pt catalyst is dispersed homogeneously on the surface of carbon nanohorns
・ Finer particles have better catalyst capability
Prototype of carbon-nanohorn fuel cell
JST, Sansouken, NEC
6. Exploring Interdisciplinary
New Devices
Nanobio devices
“Fusion of electronics and
biotechnology”
NEMS devices
“Fusion of electronics and mechanics
Nanobio devices
Protein
DNA
制御電極
Control electrode
Schematics of NEMS nanobio devices
High-precision separation : Artificial gel
Fabrication of three-dimensional
nanostructures
Focused-ion-beam chemical-vapor-deposition
 Demonstration of three-dimensional nanostructure fabrication
(collaborated with Himeji Inst. Technol. & SII Inc.:Nikkei BP award)
3-D nanostructure
fabrication By FIB-CVD
2.75mm
Nano wineglass made of
Diamond-like-Carbon
Nano-coil
 Nanobio devices, NEMS(nano-scale electro-mechanical sysytem),
Electro-mechanical switches
Beam fabrication
Top down
2.75mm
FIB excited chemical reaction
(3-dimensional nanostructure)
EB lithography with calix-arene resist
(2-dimensional nanopattern)
New market, New industry
Nanotechnology
Self assembled organic membrane
Fine particle
C60
Bottom up
Self assembled
DNA
Chemical reaction
Chemical modification
Carbon nanotube
(Diameter ~1nm
Smoothness in atomic level)
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