CENTER FOR NANOSCALE SCIENCE AND ENGINEERING
Standard Operating Procedures
Small Sputtering Machine
Ross Levine
With revisions by:
Brian Wajdyk
Version 2.2
Page 1 of 17
•
•
•
•
•
Important
Gloves should be worn while handling anything going in vacuum to reduce contamination.
You can only use CeNSE laboratories and equipment if you have been approved by Brian or
Chuck, reserved the tool on the calendar, and filled out a reservation form. No Exceptions!
If the equipment is acting unusual STOP! Place the instrument in the normal standby mode.
Leave a note on the machine. Then please discuss with Brian or Chuck before proceeding.
Any accidental damage must be reported immediately.
All CeNSE laboratories are protected by video surveillance.
Version 2.2
Page 2 of 17
Machine Exterior
Version 2.2
Page 3 of 17
Other Parts of the Machine
Version 2.2
Page 4 of 17
Figure 2d: Chamber lid
Version 2.2
Page 5 of 17
1. Preparation
Operating Procedure
1.1. Before beginning, be sure to wear gloves to reduce contamination and to protect the hands.
2. Load the sample and target
2.1. Open the chamber lid:
2.1.1. Disable the turbo pump by flipping the switch downward on the main panel (figure 1a).
Wait about a minute before proceeding.
2.1.2. Disable the rough pump by flipping the switch downward on the main panel (figure 1a).
2.1.3. Look through the chamber window and ensure that the shutter is directly below the gun;
if it is not, the shutter will collide with the chamber wall when opening the lid.
2.1.4. Wait until the chamber is vented. There will be no obvious signs, but the chamber lid will
not open if the chamber is not fully vented. Venting time is typically between 3-5
minutes.
2.1.5. Using a step ladder, unscrew the RF cable (Figure 2d). Place the cable out of the way.
2.1.6. Grab the chamber lid handle and open the chamber lid completely; it will sit upsidedown on its own pole.
2.2. Place the sample on the stage inside the chamber (figure 2b). Ensure that the side on which the
deposition will take place is facing upwards.
2.3. Before placing your target on the gun, check to make sure there is thermal paste on the copper
cathode. The proper amount is thick enough to cover it completely. However it should not be
completely opaque.
2.4. Place your target on the gun, with the magnetic keeper facing the gun (figure 2a).
2.5. Close and prepare the chamber:
2.5.1. Close the chamber lid using the handle. The lid is centered over the chamber the lid
sticks out all the way around the chamber rim.
2.5.2. Replace the RF cable (Figure 2d).
2.5.3. Turn on the rough pump by flipping the switch upward on the main panel (figure 1a).
2.5.4. After waiting for about 1 minute, turn on the turbo pump by flipping the switch upward.
3. Configure the deposition
3.1. Set the deposition thickness:
3.1.1. Press and hold the thickness button on the deposition monitor (figure 2c).
3.1.2. Use the increase and decrease buttons to set the desired thickness (figure 2c).
3.2. Set the material density:
3.2.1. Use the chart in Appendix A to find the density of the deposition material.
3.2.2. Press and hold the density button on the deposition monitor (figure 2c).
3.2.3. Use the increase and decrease buttons to set the density (figure 2c).
3.3. Set the material’s acoustic impedance:
3.3.1. Use the chart in Appendix A to find the acoustic impedance of the deposition material.
3.3.2. Press and hold the acoustic impedance button on the deposition monitor (figure 2c).
Version 2.2
Page 6 of 17
3.3.3. Use the increase and decrease buttons to set the density (figure 2c).
3.4. Set the tooling factor:
3.4.1. Tooling factor must be found experimentally and varies by material. See Appendix B
3.4.2. Press and hold the tooling factor % button on the deposition monitor (figure 2c).
3.4.3. Use the increase and decrease buttons to set the tooling factor (figure 2c).
3.5. Press the start button on the deposition monitor.
Operating Procedure, continued
4. Set the output power
4.1.
4.2.
4.3.
4.4.
Press the modify button on the power supply.
Use the wheel to select “set point.”
Press the modify button again.
Turn the wheel knob to set the wattage. Using over 200 W is not permitted without
permission from the CeNSE staff.
4.5. Press the enter button to confirm and set the wattage.
5. Set the gas flow
5.1. Enable the argon flow:
5.1.1. Press the ⊗ button on the argon MFC.
5.1.2. Press the ↵ button twice.
5.1.3. Use the  and  buttons until the screen option “Change Valve Operation” is shown.
5.1.4. Press the ↵ button.
5.1.5. Use the  button to select “Automatic.”
5.1.6. Press the ↵ button.
5.1.7. Use the  button to select “Yes.”
5.1.8. Press the ↵ button.
5.1.9. Using the menu, set the desired flow of argon using the “Change Setpoint” option.
5.1.10. Press the ⊗ button to exit the menu.
5.2. Disable the air flow:
5.2.1. Press the ⊗ button on the air MFC.
5.2.2. Press the ↵ button twice.
5.2.3. Use the  and  buttons until the screen option “Change Valve Operation” is shown.
5.2.4. If the Valve Operation is already set to “Valve closed,” skip to step 5.3.10.
5.2.5. Press the ↵ button.
5.2.6. Use the  button to select “Valve closed.”
5.2.7. Press the ↵ button.
5.2.8. Use the  button to select “Yes.”
5.2.9. Press the ↵ button.
5.2.10. Press the ⊗ button to exit the menu.
Version 2.2
Page 7 of 17
Operating Procedure, continued
6. Start the sputtering process
6.1.
6.2.
6.3.
6.4.
6.5.
6.6.
6.7.
6.8.
6.9.
Ensure that the valve is open on the argon tank.
Wait until the green light is on. This indicates the turbo pump is at full speed.
Turn on the “gas” switch.
Wait for the vacuum to stabilize inside the chamber.
Turn on the “stage” switch for an isotropic effect. This will to allow the stage to rotate creating
better step coverage and be more conformal to the. When this isn’t desired, such as in a lift-off
process, this can be left off.
Check the RF source display for the letters “IL,” to ensure the interlocks are open.
Press the “RF” button (Figure 1) to start the plasma.
Presputter with the shutter closed to remove surface contaminants from the target. 1-2
minutes is usually a good amount of time to presputter.
When you are ready to begin, turn the shutter fully clockwise open, and quickly press start
again on the deposition monitor to re-zero the measurement. The thickness monitor will
automatically turn off the RF power when the desired thickness is reached.
7. End the sputtering process
7.1. Turn off components, in this order:
7.1.1. Turn off the “stage” switch.
7.1.2. Turn off the turbo pump and wait about a minute before proceeding to the next step.
7.1.3. Turn off the rough pump.
7.2. Move the shutter back over the gun.
7.3. Wait for the chamber to pressurize.
7.4. Open the chamber lid as described in steps 2.1.3 through 2.1.5.
7.5. Turn off the gas:
7.5.1. Turn off the “gas” switch.
7.5.2. Close the valve on the argon tank.
7.6. Unload the sample if you are done with it (using gloves).
7.7. If it is no longer needed, remove the target and put it back in its container. If necessary,
carefully use the tool that is attached to the machine to pry it out. Be careful to not scratch the
gun.
8. When you are done with the machine
8.1. Close the chamber lid using the handle; ensure the lid is centered over the (empty) chamber.
8.2. Turn on the rough pump by flipping the switch upward.
8.3. Wait about a minute; then turn on the turbo pump by flipping the switch upward.
Version 2.2
Page 8 of 17
Appendix A: Material Properties
Use the chart below 1 to find the properties of the deposition material for step 3 in the Operating
Procedure.
Formula
Ag
AgBr
AgCl
Al
Al2O3
Al4C3
AlF3
AlN
AlSb
As
As2Se3
Au
B
B2O3
B4C
BN
Ba
BaF2
BaN2O6
BaO
BaTiO3
BaTiO3
Be
BeF2
BeO
Bi
Bi2O3
Bi2S3
Bi2Se3
1
Density
10.5
6.47
5.56
2.70
3.97
2.36
3.07
3.26
4.36
5.73
4.75
19.3
2.37
1.82
2.37
1.86
3.5
4.886
3.244
5.72
5.999
6.035
1.85
1.99
3.01
9.8
8.9
7.39
6.82
Z-Ratio
0.529
1.18
1.32
1.08
0.336
?
?
?
0.743
0.966
?
0.381
0.389
?
?
?
2.1
0.793
1.261
?
0.464
0.412
0.543
?
?
0.79
?
?
?
Acoustic
Impedance
16.69
7.48
6.69
8.18
26.28
11.88
9.14
23.18
22.70
4.20
11.13
7.00
19.03
21.43
16.26
11.18
SQM-160 User’s Guide, Version 4.06. Sigma Instruments, Inc. 2000-2008.
Version 2.2
Page 9 of 17
Material Name
Silver
Silver Bromide
Silver Chloride
Aluminum
Aluminum Oxide
Aluminum Carbide
Aluminum Fluoride
Aluminum Nitride
Aluminum Antimonide
Arsenic
Arsenic Selenide
Gold
Boron
Boron Oxide
Boron Carbide
Boron Nitride
Barium
Barium Fluoride
Barium Nitrate
Barium Oxide
Barium Titanate (Tetr)
Barium Titanate (Cubic)
Beryllium
Beryllium Fluoride
Beryllium Oxide
Bismuth
Bismuth Oxide
Bismuth Trisuiphide
Bismuth Selenide
Formula
Bi2Te3
BiF3
C
C
C8H8
Ca
CaF2
CaO
CaO-SiO2
CaSO4
CaTiO3
CaWO4
Cd
CdF2
CdO
CdS
CdSe
CdTe
Ce
CeF3
CeO2
Co
CoO
Cr
Cr2O3
Cr3C2
CrB
Cs
Cs2SO4
CsBr
CsCl
CsI
Cu
Cu2O
Cu2S
Cu2S
CuS
Dy
Dy2O3
Er
Version 2.2
Density
7.7
5.32
2.25
3.52
1.1
1.55
3.18
3.35
2.9
2.962
4.1
6.06
8.64
6.64
8.15
4.83
5.81
6.2
6.78
6.16
7.13
8.9
6.44
7.2
5.21
6.68
6.17
1.87
4.243
4.456
3.988
4.516
8.93
6
Cu2S
Cu2S
CuS
Dy
Dy2O3
Er
Z-Ratio
?
?
3.26
0.22
?
2.62
0.775
?
?
0.955
?
?
0.682
?
?
1.02
?
0.98
?
?
?
0.343
0.412
0.305
?
?
?
?
1.212
1.41
1.399
1.542
0.437
?
5.6
5.8
4.6
8.55
7.81
9.05
Acoustic
Impedance
2.71
40.14
3.37
11.39
9.25
12.95
8.66
9.01
25.74
21.43
28.95
7.29
6.26
6.31
5.73
20.21
1.58
1.52
1.92
1.03
1.13
0.98
Page 10 of 17
Material Name
Bismuth Telluride
Bismuth Fluoride
Carbon (Graphite)
Carbon (Diamond)
Parlyene (Union Carbide)
Calcium
Calcium Fluoride
Calcium Oxide
Calcium Silicate (3)
Calcium Sulfate
Calcium Titanate
Calcium Tungstate
Cadmium
Cadmium Fluoride
Cadmium Oxide
Cadmium Sulfide
Cadmium Selenide,
Cadmium Telluride
Cerium
Cerium (III) Fluoride
Cerium (IV) Dioxide
Cobalt
Cobalt Oxide
Chromium
Chromium (III) Oxide
Chromium Carbide
Chromium Boride
Cesium
Cesium Sulfate
Cesium Bromide
Cesium Chloride
Cesium Iodide
Copper
Copper Oxide
Copper (I) Sulfide (Alpha)
Copper (I) Sulfide (Beta)
Copper (II) Sulfide
Dysprosium
Dysprosium Oxide
Erbium
Formula
Er2O3
Eu
EuF2
Fe
Fe2O3
FeO
FeS
Ga
Ga2O3
GaAs
GaN
GaP
GaSb
Gd
Gd2O3
Ge
Ge3N2
GeO2
GeTe
Hf
HfB2
HfC
HfN
HfO2
HfSi2
Hg
Ho
Ho2O3
In
In2O3
In2Se3
In2Te3
InAs
InP
InSb
Ir
K
KBr
KCl
KF
Version 2.2
Density
Er2O3
Eu
EuF2
7.86
5.24
5.7
4.84
5.93
5.88
5.31
6.1
4.1
5.6
7.89
7.41
5.35
5.2
6.24
6.2
13.09
10.5
12.2
13.8
9.68
7.2
13.46
8.8
8.41
7.3
7.18
5.7
5.8
5.7
4.8
5.76
22.4
0.86
2.75
1.98
2.48
Z-Ratio
8.64
5.26
6.5
0.349
?
?
?
0.593
?
1.59
?
?
?
0.67
?
0.516
?
?
?
0.36
?
?
?
?
?
0.74
0.58
?
0.841
?
?
?
?
?
0.769
0.129
10.189
1.893
2.05
?
Acoustic
Impedance
1.02
1.68
1.36
25.30
14.89
5.55
13.18
17.11
24.53
11.93
15.22
10.50
11.48
68.45
0.87
4.66
4.31
Page 11 of 17
Material Name
Erbium Oxide
Europium
Europium Fluoride
Iron
Iron Oxide
Iron Oxide
Iron Sulphide
Gallium
Gallium Oxide (B)
Gallium Arsenide
Gallium Nitride
Gallium Phosphide
Gallium Antimonide
Gadolinium
Gadolinium Oxide
Germanium
Germanium Nitride
Germanium Oxide
Germanium Telluride
Hafnium
Hafnium Boride,
Hafnium Carbide
Hafnium Nitride
Hafnium Oxide
Hafnium Silicide
Mercury
Holminum
Holminum Oxide
Indium
Indium Sesquioxide
Indium Selenide
Indium Telluride
Indium Arsenide
Indium Phosphide
Indium Antimonide
Iridium
Potassium
Potassium Bromide
Potassium Chloride
Potassium Fluoride
Formula
KI
La
La2O3
LaB6
LaF3
Li
LiBr
LiF
LiNbO3
Lu
Mg
MgAl2O4
MgAl2O6
MgF2
MgO
Mn
MnO
MnS
Mo
Mo2C
MoB2
MoO3
MoS2
Na
Na3AlF6
Na5AL3F14
NaBr
NaCl
NaClO3
NaF
NaNO3
Nb
Nb2O3
Nb2O5
NbB2
NbC
NbN
Nd
Nd2O3
NdF3
Version 2.2
Density
3.128
6.17
6.51
2.61
5.94
0.53
3.47
2.638
4.7
9.84
1.74
3.6
8
3.18
3.58
7.2
5.39
3.99
10.2
9.18
7.12
4.7
4.8
0.97
2.9
2.9
3.2
2.17
2.164
2.558
2.27
8.578
7.5
4.47
6.97
7.82
8.4
7
7.24
6.506
Z-Ratio
2.077
0.92
?
?
?
5.9
1.23
0.778
0.463
?
1.61
?
?
0.637
0.411
0.377
0.467
0.94
0.257
?
?
?
?
4.8
?
?
?
1.57
1.565
0.949
1.194
0.492
?
?
?
?
?
?
?
?
Acoustic
Impedance
4.25
9.60
1.50
7.18
11.35
19.07
5.48
13.86
21.48
23.42
18.91
9.39
34.36
1.84
5.62
5.64
9.30
7.40
17.95
Page 12 of 17
Material Name
Potassium Iodide
Lanthanum
Lanthanum Oxide
Lanthanum Boride
Lanthanum Fluoride
Lithium
Lithium Bromide
Lithium Fluoride
Lithium Niobate
Lutetium
Magnesium
Magnesium Aluminate
Spinel
Magnesium Fluoride
Magnesium Oxide
Manganese
Manganese Oxide
Manganese (II) Sulfide
Molybdenum
Molybdenum Carbide
Molybdenum Boride
Molybdenum Trioxdide
Molybdenum Disulfide
Sodium
Cryolite
Chiolite
Sodium Bromide
Sodium Chloride
Sodium Chlorate
Sodium Fluoride
Sodium Nitrate
Niobium (Columbium)
Niobium Trioxide
Niobium (V) Oxide
Niobium Boride
Niobium Carbide
Niobium Nitride
Neodynium
Neodynium Oxide
Neodynium Fluoride
Formula
Ni
NiCr
NiCrFe
NiFe
NiFeMo
NiO
P3N5
Pb
PbCl2
PbF2
PbO
PbS
PbSe
PbSnO3
PbTe
Pd
PdO
Po
Pr
Pr2O3
Pt
PtO2
Ra
Rb
Rbl
Re
Rh
Ru
S8
Sb
Sb2O3
Sb2S3
Sc
Sc2O3
Se
Si
Si3N4
SiC
SiO
SiO2
Version 2.2
Density
8.91
8.5
8.5
8.7
8.9
7.45
2.51
11.3
5.85
8.24
9.53
7.5
8.1
8.1
8.16
12.038
8.31
9.4
6.78
6.88
21.4
10.2
5
1.53
3.55
21.04
12.41
12.362
2.07
6.62
5.2
4.64
3
3.86
4.81
2.32
3.44
3.22
2.13
2.648
Z-Ratio
0.331
?
?
?
?
?
?
1.13
?
0.661
?
0.566
?
?
0.651
0.357
?
?
?
?
0.245
?
?
2.54
?
0.15
0.21
0.182
2.29
0.768
?
?
0.91
?
0.864
0.712
*1000
?
0.87
1
Acoustic
Impedance
26.68
7.81
13.36
15.60
13.56
24.73
36.04
3.48
58.87
42.05
48.52
3.86
11.50
9.70
10.22
12.40
10.15
8.83
Page 13 of 17
Material Name
Nickel
Nichrome
Inconel
Permalloy
Supermalloy
Nickel Oxide
Phosphorus Nitride
Lead
Lead Chloride
Lead Fluoride
Lead Oxide
Lead Sulfide
Lead Selenide
Lead Stannate
Lead Telluride
Palladium
Palladium Oxide
Polonium
Praseodymium
Praseodymium Oxide
Platinum
Platinum Oxide
Radium
Rubidium
Rubidium Iodide
Rhenium
Rhodium
Ruthenium
Sulphur
Antimony
Antimony Trioxide
Antimony Trisulfide
Scandium
Scandium Oxide
Selenium
Silicon
Silicon Nitride
Silicon Carbide
Silicon (II) Oxide
Silicon Dioxide
Formula
Sm
Sm2O3
Sn
SnO2
SnS
SnSe
SnTe
Sr
SrF2
SrO
Ta
Ta2O5
TaB2
TaC
TaN
Tb
Tc
Te
TeO2
Th
ThF4
ThO2
ThOF2
Ti
Ti2O3
TiB2
TiC
TiN
TiO
TiO2
Tl
TlBr
TlCl
TlI
U
U3O8
U4O9
UO2
V
V2O5
Version 2.2
Density
7.54
7.43
7.3
6.95
5.08
6.18
6.44
2.6
4.277
4.99
16.6
8.2
11.15
13.9
16.3
8.27
11.5
6.25
5.99
11.694
6.32
9.86
9.1
4.5
4.6
4.5
4.93
5.43
4.9
4.26
11.85
7.56
7
7.09
19.05
8.3
10.969
10.97
5.96
3.36
Z-Ratio
0.89
?
0.724
?
?
?
?
?
0.727
0.517
0.262
0.3
?
?
?
0.66
?
0.9
0.862
0.484
?
0.284
?
0.628
?
?
?
?
?
0.4
1.55
?
?
?
0.238
?
0.348
0.286
0.53
?
Acoustic
Impedance
9.92
12.20
12.15
17.08
33.70
29.43
13.38
9.81
10.24
18.24
31.09
14.06
22.08
5.70
37.10
25.37
30.87
16.66
Page 14 of 17
Material Name
Samarium
Samarium Oxide
Tin
Tin Oxide
Tin Sulfide
Tin Selenide
Tin Telluride
Strontium
Strontium Fluroide
Strontium Oxide
Tantalum
Tantalum (V) Oxide
Tantalum Boride
Tantalum Carbide
Tantalum Nitride
Terbium
Technetium
Tellurium
Tellurium Oxide
Thorium
Thorium (IV) Fluoride
Thorium Dioxide
Thorium Oxyfluoride
Titanium
Titanium Sesquioxide
Titanium Boride
Titanium Carbide
Titanium Nitride
Titanium Oxide
Titanium (IV) Oxide
Thallium
Thallium Bromide
Thallium Chloride
Thallium Iodide (B)
Uranium
Tri Uranium Octoxide
Uranium Oxide
Uranium Dioxide
Vanadium
Vanadium Pentoxide
Formula
VB2
VC
VN
VO2
W
WB2
WC
WO3
WS2
WSi2
Y
Y2O3
Yb
Yb2O3
Zn
Zn3Sb2
ZnF2
ZnO
ZnS
ZnSe
ZnTe
Zr
ZrB2
ZrC
ZrN
ZrO2
Version 2.2
Density
5.1
5.77
6.13
4.34
19.3
10.77
15.6
7.16
7.5
9.4
4.34
5.01
6.98
9.17
7.04
6.3
4.95
5.61
4.09
5.26
6.34
6.49
6.08
6.73
7.09
5.6
Z-Ratio
?
?
?
?
0.163
?
0.151
?
?
?
0.835
?
1.13
?
0.514
?
?
0.556
0.775
0.722
0.77
0.6
?
0.264
?
?
Acoustic
Impedance
54.17
58.48
10.57
7.81
17.18
15.88
11.39
12.23
11.47
14.72
33.45
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Material Name
Vanadium Boride
Vanadium Carbide
Vanadium Nitride
Vanadium Dioxide
Tungsten
Tungsten Boride
Tungsten Carbide
Tungsten Trioxide
Tungsten Disulphide
Tungsten Suicide
Yttrium
Yttrium Oxide
Ytterbium
Ytterbium Oxide
Zinc
Zinc Antimonide
Zinc Fluoride
Zinc Oxide
Zinc Sulfide
Zinc Selenide
Zinc Telluride
Zirconium
Zirconium Boride
Zirconium Carbide
Zirconium Nitride
Zirconium Oxide
Appendix B: Tooling Factor
What is Tooling Factor? Tooling Factor is a correction for the difference in material deposited on the
quartz sensor versus the substrate. Illustrated below is an example of how difference in distance
between the sensor and substrate causes an incorrect reading as you would see in an electron or thermal
evaporation system. It is impossible to place a sensor in exactly the same place as your substrate unless
the sensor is your substrate.
How do I determine Tooling Factor?
1. Place your substrate and a sensor in their normal position. Mask part of the substrate with a thin
material. Thinner is better (i.e. microscope cover glass).
2. Set Tooling to an approximate value or if unknown use 100. (𝑇𝑜𝑜𝑙𝑖𝑛𝑔𝐴𝑝𝑝𝑟𝑜𝑥𝑖𝑚𝑎𝑡𝑒 )
3. Set Density and Z-Factor for your material.
4. Deposit 1000Å or more of material. (𝑇ℎ𝑖𝑐𝑘𝑛𝑒𝑠𝑠𝑄𝐶𝑀 )
5. Use a profilometer or AFM to measure the substrate’s actual film thickness. (𝑇ℎ𝑖𝑐𝑘𝑛𝑒𝑠𝑠𝐴𝑐𝑡𝑢𝑎𝑙 )
6. The Tooling Factor is calculated by:
𝑇𝑜𝑜𝑙𝑖𝑛𝑔𝐴𝑐𝑡𝑢𝑎𝑙 = 𝑇𝑜𝑜𝑙𝑖𝑛𝑔𝐴𝑝𝑝𝑟𝑜𝑥𝑖𝑚𝑎𝑡𝑒 ×
𝑇ℎ𝑖𝑐𝑘𝑛𝑒𝑠𝑠𝐴𝑐𝑡𝑢𝑎𝑙
𝑇ℎ𝑖𝑐𝑘𝑛𝑒𝑠𝑠𝑄𝐶𝑀
7. Repeated this procedure a second or third time for increased accuracy.
For example
You want to deposit 250nm of Al. We have no idea what a good tooling factor is so we use 100 (which is
equivalent to uncorrected) as the approximate tooling factor. We deposit what the thickness monitor
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tells us is 250nm, but measurement with a profilometer says you actually deposited 157nm. This gives
us a tooling factor of 62.8
62.8 = 100 ×
157
250
71.7 = 68.2 ×
263
250
But we need our deposition to be even more precise therefore repeat the procedure. However we now
know that the tooling factor is 62.8 so we use that as our approximate tooling factor and entered it on
the thickness monitor. Again we deposit what the thickness monitor says is 250nm. This time the
profiler tells us the actual deposition was 263nm. So to calculate an improved tooling factor we enter
This gives us a tooling factor of 71.7. You can continue to improve the tooling factor by repeating the
process until a satisfactory accuracy is achieved.
When should I check the tooling factor?
1. When accuracy is critical.
2. When the target (source) material, substrate (sample), or detector placement has changed.
3. Large changes to chamber pressure, power, or material density from previous tooling
correction.
a. I thought the purpose of the tooling factor is a correction for placement of the sensor
vs. sample?
1. It is. Unfortunately other parameters can affect the deposition in other
ways. For example while a plasma magnetron sputter system is
considered fairly isotropic in nature. This often confuses users in to
thinking the deposition thickness does not vary spatially with distance
from the center. However the plasma is actually focused. Changes to
power, pressure and material change the path of source atoms /
molecules in their flight to the substrate.
2. If a deposition source did act like a perfect point source, the entire
sample stage would have to be hemispherically shaped to keep the
distance from the source constant.
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