FGPF50N33BT
330 V PDP Trench IGBT
Features
General Description
• High Current Capability
Using novel trench IGBT technology, Fairchild's new series of
trench IGBTs offer the optimum performance for PDP TV applications where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) =1.6 V @ IC = 50 A
• High Input Impedance
• RoHS Compliant
Applications
• PDP TV
GC E
TO-220F
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
330
V
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
 30
V
IC
Collector Current
@ TC = 25oC
50
A
ICpulse (1)*
Pulsed Collector Current
@ TC = 25oC
120
A
160
A
ICpulse (2)*
PD
Pulsed Collector Current
o
@ TC = 25 C
o
Maximum Power Dissipation
@ TC = 25 C
43
W
Maximum Power Dissipation
@ TC = 100oC
17.2
W
TJ
Operating Junction Temperature
-55 to +150
o
C
Tstg
Storage Temperature Range
-55 to +150
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case
-
2.9
o
C/W
RJA
Thermal Resistance, Junction to Ambient
-
62.5
o
C/W
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D < 0.01, pluse width < 10usec
*Ic_pluse limited by max Tj
©2008 Fairchild Semiconductor Corporation
FGPF50N33BT Rev. C1
1
www.fairchildsemi.com
FGPF50N33BT — 330 V PDP Trench IGBT
November 2013
Part Number
Top Mark
FGPF50N33BTTU
FGPF50N33BT
Package Packing Method Reel Size Tape Width
TO-220F
Electrical Characteristics of the IGBT
Symbol
Parameter
Tube
N/A
Quantity
N/A
50
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
330
-
-
V
340
-
-
V
-
0.2
-
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A, Tc=25oC
VGE = 0 V, IC = 250 A, Tc=125oC
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 A
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V, Tc=25oC
-
-
20
A
VCE = VCES, VGE = 0 V, Tc=125oC
-
-
200
A
VGE = VGES, VCE = 0 V
-
-
±200
nA
IC = 250 A, VCE = VGE
2.3
3.3
4.3
V
IC = 20 A, VGE = 15 V,
-
1.2
1.5
V
IC = 30 A, VGE = 15 V,
-
1.3
-
V
IC = 50 A, VGE = 15 V,
TC = 25oC
-
1.6
-
V
IC = 50 A, VGE = 15 V,
TC = 125oC
-
1.7
-
V
-
980
-
pF
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
70
-
pF
-
40
-
pF
-
9
-
ns
IGES
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
td(on)
VCC = 200 V, IC = 20 A,
RG = 5 , VGE = 15 V,
Resistive Load, TC = 25oC
-
33
-
ns
-
32
-
ns
Fall Time
-
202
-
ns
Turn-On Delay Time
-
9
-
ns
tr
Rise Time
td(off)
Turn-Off Delay Time
VCC = 200 V, IC = 20 A,
RG = 5 , VGE = 15 V,
Resistive Load, TC = 125oC
-
37
-
ns
-
33
-
ns
tf
Fall Time
-
332
-
ns
Qg
Total Gate Charge
-
35
-
nC
Qge
Gate to Emitter Charge
-
6
-
nC
Qgc
Gate to Collector Charge
-
14
-
nC
©2008 Fairchild Semiconductor Corporation
FGPF50N33BT Rev. C1
VCE = 200 V, IC = 20 A,
VGE = 15 V
2
www.fairchildsemi.com
FGPF50N33BT — 330 V PDP Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
160
o
TC = 25 C
20V
Figure 2. Typical Output Characteristics
160
15V
o
TC = 125 C
20V
15V
120
Collector Current, IC [A]
Collector Current, IC [A]
12V
10V
80
VGE = 8V
40
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
12V
120
10V
80
VGE = 8V
40
0
0.0
6.0
Figure 3. Typical Saturation Voltage
Characteristics
160
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
o
TC = 25 C
120
Collector Current, IC [A]
Collector Current, IC [A]
6.0
Figure 4. Transfer Characteristics
160
o
TC = 125 C
80
40
TC = 25 C
120
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
80
40
0
3
6
9
12
Gate-Emitter Voltage,VGE [V]
15
Figure 6. Saturation Voltage vs. VGE
2.0
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
1.8
50A
1.6
o
TC = 125 C
0
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
1.4
30A
1.2
IC = 20A
1.0
Common Emitter
o
TC = 25 C
16
12
8
50A
4
30A
IC = 20A
0.8
25
50
75
100
o
Case Temperature, TC [ C]
©2008 Fairchild Semiconductor Corporation
FGPF50N33BT Rev. C1
0
125
3
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGPF50N33BT — 330 V PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
20
1500
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Cies
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
12
8
o
TC = 25 C
1000
Coes
500
30A
4
IC = 20A
50A
Cres
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
0
20
1
Figure 9. Gate charge Characteristics
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
15
500
Common Emitter
10s
100
12
VCC = 100V
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
TC = 25 C
200V
9
6
3
10
20
30
Gate Charge, Qg [nC]
10
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
0.01
0.1
0
0
100s
40
Figure 11. Turn-on Characteristics vs.
Gate Resistance
400
Figure 12. Turn-off Characteristics vs.
Gate Resistance
4000
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
1000
tr
Switching Time [ns]
Switching Time [ns]
1
10
100
Collector-Emitter Voltage, VCE [V]
10
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
o
TC = 25 C
tf
o
TC = 125 C
100
td(off)
o
TC = 25 C
o
TC = 125 C
10
1
0
10
20
30
40
Gate Resistance, RG [ ]
©2008 Fairchild Semiconductor Corporation
FGPF50N33BT Rev. C1
0
50
10
20
30
40
50
Gate Resistance, RG []
4
www.fairchildsemi.com
FGPF50N33BT — 330 V PDP Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
5000
200
Common Emitter
VGE = 15V, RG = 5
Common Emitter
VGE = 15V, RG = 5
o
o
TC = 25 C
tr
o
Switching Time [ns]
TC = 125 C
1000
Switching Time [ns]
100
td(on)
TC = 25 C
o
TC = 125 C
tf
100
td(off)
10
5
10
20
30
40
10
10
50
20
Figure 15. Switching Loss vs. Gate Resistance
20000
10000
Common Emitter
VCC = 200V, VGE = 15V
TC = 25 C
o
TC = 125 C
Switching Loss [μJ]
Switching Loss [μJ]
Common Emitter
VGE = 15V, RG = 5
TC = 25 C
o
Eoff
100
Eon
0
50
o
IC = 20A
10
40
Figure 16. Switching Loss vs. Collector Current
5000
1000
30
Collector Current, IC [A]
Collector Current, IC [A]
10
20
30
40
Gate Resistance, RG []
1000
Eoff
100
Eon
10
1
10
50
o
TC = 125 C
20
30
40
50
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
200
Collector Current, IC [A]
100
10
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
100
500
Collector-Emitter Voltage, VCE [V]
©2008 Fairchild Semiconductor Corporation
FGPF50N33BT Rev. C1
5
www.fairchildsemi.com
FGPF50N33BT — 330 V PDP Trench IGBT
Typical Performance Characteristics
FGPF50N33BT — 330 V PDP Trench IGBT
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
0.5
1
0.3
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
single pulse
1E-3
1E-5
1E-4
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
©2008 Fairchild Semiconductor Corporation
FGPF50N33BT Rev. C1
6
www.fairchildsemi.com
FGPF50N33BT — 330 V PDP Trench IGBT
Package Dimensions
Figure 19. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2008 Fairchild Semiconductor Corporation
FGPF50N33BT Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2008 Fairchild Semiconductor Corporation
FGPF50N33BT Rev. C1
8
www.fairchildsemi.com
FGPF50N33BT — 330 V PDP Trench IGBT
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