2N4400 / MMBT4400
MMBT4400
2N4400
C
E
C
B
TO-92
SOT-23
E
B
Mark: 83
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
600
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
 2001 Fairchild Semiconductor Corporation
Max
Units
2N4400
625
5.0
83.3
*MMBT4400
350
2.8
200
357
mW
mW/°C
°C/W
°C/W
2N4400/MMBT4400, Rev A
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100 µA, IC = 0
6.0
ICEX
Collector Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
µA
IBL
Emitter Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
µA
V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 150 mA
VCE = 2.0 V, IC = 500 mA
IC = 150 mA, IB =15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB =15 mA
IC = 500 mA, IB = 50 mA
20
40
50
20
0.75
150
0.40
0.75
0.95
1.2
V
V
V
V
6.5
pF
30
pF
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 5.0 V, f = 140 kHz
Cib
Input Capacitance
VEB = 0.5 V, f = 140 kHz
hfe
Small-Signal Current Gain
2.0
hfe
Small-Signal Current Gain
IC = 20 mA, VCE = 10 V,
f = 100 MHz
VCE = 10 V, IC = 1.0 mA,
20
250
hie
Input Impedance
f = 1.0 kHz
0.5
7.5
KΩ
hre
Voltage Feedback Ratio
0.1
8.0
x 10
hoe
Output Admittance
1.0
30
µmhos
VCC = 30 V, IC = 150 mA,
15
ns
-4
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
IB1 = 15 mA ,VEB = 2 V
Storage Time
VCC = 30 V, IC = 150 mA
20
225
ns
ts
tf
Fall Time
IB1 = IB2 = 15 mA
30
ns
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
ns
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
V CE = 5V
400
125 °C
300
200
25 °C
100
- 40 °C
0
0.1
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)
500
V BE(ON) - BASE-EMITTER ON VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
V BESAT - BASE-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
0.4
β = 10
0.3
125 °C
0.2
25 °C
0.1
- 40 °C
1
10
100
I C - COLLECTOR CURRENT (mA)
500
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
500
100
V
CB
20
= 40V
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
Collector-Emitter Saturation
Voltage vs Collector Current
10
1
0.1
f = 1 MHz
16
12
C
te
8
C ob
4
25
50
75
100
125
T A - AMBIENT TEMPERATURE (° C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Turn On and Turn Off Times
vs Collector Current
400
I B1 = I B2 =
Switching Times
vs Collector Current
400
Ic
320
TIME (nS)
V cc = 25 V
240
160
240
ts
160
tr
t off
80
tf
80
t on
td
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
100
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
TIME (nS)
10
320
V cc = 25 V
0
10
Ic
I B1 = I B2 =
10
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
1000
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
V CE = 10 V
T A = 25oC
6
hoe
4
h re
2
h fe
h ie
0
0
10
20
30
40
50
I C - COLLECTOR CURRENT (mA)
60
CHAR. RELATIVE TO VALUES AT TA = 25oC
Common Emitter Characteristics
8
CHAR. RELATIVE TO VALUES AT VCE = 10V
CHAR. RELATIVE TO VALUES AT I C= 10mA
Typical Common Emitter Characteristics
(f = 1.0kHz)
Common Emitter Characteristics
2.4
V CE = 10 V
I C = 10 mA
2
h re
h fe
1.6
hoe
1.2
0.8
0.4
0
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
Common Emitter Characteristics
1.3
I C = 10 mA
T A = 25oC
1.25
h fe
1.2
1.15
h ie
1.1
1.05
1
h re
0.95
0.9
0.85
hoe
0.8
0.75
0
5
h ie
10
15
20
25
30
VCE - COLLECTOR VOLTAGE (V)
35
100
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
Test Circuits
30 V
200 Ω
16 V
Ω
1.0 KΩ
0
≤ 200ns
500 Ω
FIGURE 1: Saturated Turn-On Switching Timer
6.0 V
- 1.5 V
NOTE: BV EBO = 5.0 V
1k
30 V
Ω
1.0 KΩ
0
≤ 200ns
50 Ω
FIGURE 2: Saturated Turn-Off Switching Time
37 Ω
2N4400 / MMBT4400
NPN General Purpose Amplifier
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G