FDP083N15A
N-Channel PowerTrench® MOSFET
150 V, 117 A, 8.3 mΩ
Features
Description
• RDS(on) = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior
switching performance.
• Fast Switching Speed
• Low Gate Charge, QG = 64.5 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• High Power and Current Handling Capability
• Battery Protection Circuit
• RoHS Compliant
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
GD
S
G
TO-220
S
MOSFET Maximum Ratings TC =
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
25oC
unless otherwise noted.
Parameter
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
- Continuous (TC = 25oC, Silicon Limited)
Unit
V
±20
V
117
A
- Continuous (TC = 100oC, Silicon Limited)
83
- Pulsed
(Note 1)
468
A
(Note 2)
542
mJ
6
V/ns
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
FDP083N15A_F102
150
- Derate Above 25oC
294
W
1.96
W/oC
-55 to +175
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
FDP083N15A_F102
RθJC
Thermal Resistance, Junction to Case, Max.
0.51
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. C2
1
Unit
oC/W
www.fairchildsemi.com
FDP083N15A — N-Channel PowerTrench® MOSFET
November 2013
Part Number
FDP083N15A_F102
Top Mark
FDP083N15A
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
150
-
-
V
-
0.08
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to
25oC
VDS = 120 V, VGS = 0 V
-
-
1
VDS = 120 V, TC = 150oC
-
-
500
VGS = ±20 V, VDS = 0 V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
2.0
-
4.0
V
Static Drain to Source On Resistance
VGS = 10 V, ID = 75 A
-
6.85
8.30
mΩ
gFS
Forward Transconductance
VDS = 10 V, ID = 75 A
-
139
-
S
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
4645
6040
pF
-
1445
1880
pF
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance(G-S)
VDS = 7 5V, VGS = 0 V,
f = 1 MHz
-
100
-
-
4570
6040
pF
-
460
1880
pF
-
20
-
pF
-
64.5
84
nC
-
19.1
-
nC
-
8.7
-
nC
-
13.5
-
nC
f = 1 MHz
-
2.5
-
Ω
VDD = 75 V, ID = 75 A,
VGS = 10 V, RG = 4.7 Ω
-
22
54
ns
-
58
126
ns
VDS = 120 V, ID = 75 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
(Note 4)
-
61
132
ns
-
26
62
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
117
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
468
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 75 A
-
-
1.25
V
trr
Reverse Recovery Time
-
96
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/μs
-
268
-
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting TJ = 25°C, L = 3 mH, ISD = 19 A.
3. ISD ≤ 75 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. C2
2
www.fairchildsemi.com
FDP083N15A — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
VGS = 10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
ID, Drain Current[A]
ID, Drain Current[A]
500
100
o
175 C
o
25 C
10
o
-55 C
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
o
10
0.1
2. TC = 25 C
1
VDS, Drain-Source Voltage[V]
1
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3
4
5
VGS, Gate-Source Voltage[V]
500
IS, Reverse Drain Current [A]
12
10
VGS = 10V
8
VGS = 20V
6
100
o
175 C
10
*Notes:
1. VGS = 0V
*Note: TC = 25 C
0
100
200
300
ID, Drain Current [A]
1
0.0
400
Figure 5. Capacitance Characteristics
o
25 C
o
4
6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
14
RDS(ON) [mΩ],
Drain-Source On-Resistance
2
2. 250μs Pulse Test
0.5
1.0
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10
10000
VGS, Gate-Source Voltage [V]
Ciss
Capacitances [pF]
Coss
1000
Crss
100
*Note:
1. VGS = 0V
2. f = 1MHz
50
0.1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
10
VDS, Drain-Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. C2
6
4
2
0
30
3
VDS = 30V
VDS = 75V
VDS = 120V
8
*Note: ID = 75A
0
14
28
42
56
Qg, Total Gate Charge [nC]
70
www.fairchildsemi.com
FDP083N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250μA
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 75A
0.5
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
120
100
100
10μs
10
100μs
ID, Drain Current [A]
ID, Drain Current [A]
2.0
0.0
-100
200
Figure 9. Maximum Safe Operating Area
1
2.5
1ms
Operation in This Area
is Limited by R DS(on)
10ms
SINGLE PULSE
DC
o
0.1
TC = 25 C
80
VGS = 10V
60
40
20
o
TJ = 175 C
o
0.01
0.1
o
RθJC = 0.51 C/W
1
10
100
VDS, Drain-Source Voltage [V]
0
25
300
RθJC= 0.51 C/W
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 11. Unclamped Inductive Switching
Capability
IAS, AVALANCHE CURRENT (A)
300
If R = 0
t AV = (L) (IAS )/(1.3*RATED BV DSS -V DD )
If R = 0
t AV = (L/R)In [(IAS *R )/(1.3*RATED BV DSS -V DD )+1 ]
100
o
STARTING T J = 25 C
10
o
STARTING T J = 150 C
1
0.001
0.01
0.1
1
10
100
1000
t AV , TIM E IN AVALANCHE (m s)
©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. C2
4
www.fairchildsemi.com
FDP083N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDP083N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
Thermal Response [ZθJC]
ZθJC(t), Thermal Response [oC/W]
1
0.5
0.1
0.2
0.1
PDM
0.05
0.01
t1
0.02
0.01
*Notes:
Single pulse
1E-3
-5
10
©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. C2
t2
o
1. ZθJC(t) = 0.51 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
10
10
Rectangular
Pulse
[sec]
t1, Rectangular
PulseDuration
Duration [sec]
5
-1
10
0
10
www.fairchildsemi.com
FDP083N15A — N-Channel PowerTrench® MOSFET
IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 14. Resistive Switching Test Circuit & Waveforms
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. C2
6
www.fairchildsemi.com
FDP083N15A — N-Channel PowerTrench® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. C2
7
www.fairchildsemi.com
FDP083N15A — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
Figure 17. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
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©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. C2
8
www.fairchildsemi.com
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